Preliminary Technical Information IXTP44N10T IXTY44N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100 V = 44 A ≤ 30 m Ω TO-220 (IXTP) D (TAB) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGSM Transient ± 30 V ID25 IL IDM TC = 25° C Package Current Limit, RMS TO-252A TC = 25° C, pulse width limited by TJM 44 25 140 A A A IAR E AS TC = 25° C TC = 25° C 10 250 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 18 Ω 3 V/ns PD TC = 25° C 130 W -55 ... +175 175 -40 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-252 1.13 / 10 Nm/lb.in. 3 0.8 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 85 VGS(th) VDS = VGS, ID = 25 µA 2.5 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 22 A, Notes 1, 2 V TJ = 150° C 22 4.5 V ± 100 nA 1 100 µA µA 30 mΩ D S TO-252 AA (IXTY) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99646 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTP44N10T IXTY44N10T Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, Note 1 13 Ciss Coss TO-220 (IXTP) Outline 21 S 1262 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 190 pF 43 pF Crss td(on) Resistive Switching Times 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 47 ns td(off) RG = 18 Ω (External) 36 ns tf 32 ns Qg(on) 33 nC 10 nC 11 nC Pins: Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd 2 - Drain 4, TAB - Drain 1.15 °C/W RthJC RthCS 1 - Gate 3 - Source TO-220 °C/W 0.5 Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V ISM Repetitive VSD IF = 25 A, VGS = 0 V, Note 1 t rr IF = 25 A, -di/dt = 100 A/µs 44 A 140 A 1.1 V 100 VR = 50 V, VGS = 0 V ns Notes: 1. Pulse test: t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. TO-252 (IXTY) Outline Dim. 1 Anode 2 NC 3 Anode 4 Cathode A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.090 0.180 0.370 0.020 0.025 0.035 0.100 PRELIMINARY TECHNICAL INFORMATION 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 BSC BSC 0.410 0.040 0.040 0.050 0.115 The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTP44N10T IXTY44N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 45 VGS = 10V 9V 8V 40 VGS = 10V 100 9V 30 ID - Amperes ID - Amperes 35 25 7V 20 80 8V 60 40 15 7V 10 6V 20 5 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 2 4 6 8 45 14 16 18 20 3.0 VGS = 10V 9V 8V 40 2.8 RDS(on) - Normalized 30 25 7V 20 15 6V 10 5 VGS = 10V 2.6 35 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 2.4 2.2 2.0 1.8 I D = 44A 1.6 1.4 I D = 22A 1.2 1.0 0.8 5V 0.6 0 0.4 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 4.2 50 VGS = 10V 15V - - - - 3.8 TJ = 175ºC 45 40 3.4 35 3.0 ID - Amperes RDS(on) - Normalized 10 VDS - Volts VDS - Volts 2.6 2.2 1.8 30 25 External Lead Current Limit for TO-252 20 15 1.4 10 TJ = 25ºC 1.0 5 0 0.6 0 10 20 30 40 50 60 70 80 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 90 100 110 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTP44N10T IXTY44N10T Fig. 8. Transconductance Fig. 7. Input Admittance 70 30 TJ = -40ºC 25ºC 150ºC 24 g f s - Siemens 50 ID - Amperes TJ = - 40ºC 27 60 40 30 21 25ºC 18 15 150ºC 12 9 20 6 10 3 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 10 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 120 10 VDS = 50V 9 100 I D = 10A 8 I G = 1mA 7 80 VGS - Volts IS - Amperes 30 I D - Amperes 60 TJ = 150ºC 40 6 5 4 3 TJ = 25ºC 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 1.5 5 10 15 20 25 30 35 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTP44N10T IXTY44N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 75 75 RG = 18Ω 70 VGS = 10V VDS = 50V 60 t r - Nanoseconds t r - Nanoseconds 65 55 50 45 40 I D = 30A 35 30 70 RG = 18Ω 65 VGS = 10V TJ = 25ºC VDS = 50V 60 55 50 45 40 35 30 I D = 10A TJ = 125ºC 25 25 20 20 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 40 32 30 I D = 10A 70 28 60 26 50 24 40 22 30 20 20 20 25 30 35 40 45 50 55 VDS = 50V I D = 10A 38 30 35 29 32 28 29 27 26 26 60 25 35 45 50 RG = 18Ω, VGS = 10V 105 115 23 125 38 29 34 28 30 TJ = 25ºC 26 22 110 24 26 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 28 30 100 TJ = 125ºC, VGS = 10V VDS = 50V 80 t f - Nanoseconds t f - Nanoseconds 30 20 95 90 70 80 60 70 I D = 10A 50 60 40 26 30 22 20 50 I D = 30A t d ( o f f ) - Nanoseconds 42 TJ = 125ºC 18 85 td(off) - - - - tf 90 46 t d ( o f f ) - Nanoseconds 31 16 75 100 VDS = 50V 14 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - tf 12 55 TJ - Degrees Centigrade 33 10 41 31 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27 44 32 RG - Ohms 32 30 47 RG = 18Ω, VGS = 10V I D = 30A 18 15 28 t d ( o f f ) - Nanoseconds I D = 30A 80 26 50 33 t d ( o n ) - Nanoseconds 34 90 24 td(off) - - - - tf 34 36 VDS = 50V 100 22 35 38 TJ = 125ºC, VGS = 10V 110 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 120 20 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 130 tr 18 I D - Amperes 40 30 15 20 25 30 35 40 45 50 55 60 RG - Ohms IXYS REF: T_44N10T (1V) 9-15-06-A.xls