MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating 2 EMITTER Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc ICM −1200 mAdc Symbol Max Unit MARKING DIAGRAM 225 1.8 mW mW/°C 556 °C/W 2F M G G 300 2.4 mW mW/°C 417 °C/W 350 mW Collector Current − Continuous Collector Current − Peak (Note 3) 3 SOT−23 (TO−236AB) CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation − FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C PD RJA PD Thermal Resistance, Junction−to−Ambient RJA Total Device Dissipation − Heat Spreader or equivalent, (Note 4) @TA = 25°C PD Thermal Resistance, Junction−to−Ambient RJA 357 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. 4. Heat Spreader or equivalent = 450 mm2, 2 oz. 1 2F = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT2907ALT1G SMMBT2907ALT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2907ALT3G SMMBT2907ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 October, 2016 − Rev. 15 1 Publication Order Number: MMBT2907ALT1/D MMBT2907AL, SMMBT2907AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −60 −60 − − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 5) (IC = −1.0 mAdc, IB = 0) (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −60 − Vdc Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) ICBO − − −0.010 −10 − −50 75 100 100 100 50 − − − 300 − − − −0.4 −1.6 − − −1.3 −2.6 fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 ton − 45 td − 10 tr − 40 toff − 100 ts − 80 tf − 30 Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) Vdc Adc IBL nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 5) hFE Collector −Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (Note 5) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Notes 5, 6), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Delay Time Rise Time Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) Storage Time Fall Time ns 5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. 6. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns -30 V 200 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 2 MMBT2907AL, SMMBT2907AL TYPICAL CHARACTERISTICS 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 -55°C 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 t′s = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn−On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time www.onsemi.com 3 MMBT2907AL, SMMBT2907AL TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0 C, CAPACITANCE (pF) 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 Ceb 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product 1 1.1 IC/IB = 10 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC = -50 A -100 A -500 A -1.0 mA 4.0 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz 150°C 25°C −55°C 0.1 IC/IB = 10 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 4 1 MMBT2907AL, SMMBT2907AL TYPICAL SMALL−SIGNAL Characteristics NOISE FIGURE +0.5 1.2 1.1 VCE = 1 V 0 0.9 COEFFICIENT (mV/ ° C) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 0.3 0.2 0.001 0.01 0.1 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 1 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Voltage vs. Collector Current Figure 14. Temperature Coefficients 10 1s 100 ms 10 ms 1 ms 100 s 10 s 1 IC (A) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 Vdc, TA = 25°C 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 VCE (Vdc) Figure 15. Safe Operating Area www.onsemi.com 5 100 MMBT2907AL, SMMBT2907AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT2907ALT1/D