APM2315A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS(ON)=35mΩ (typ.) @ VGS=-4.5V RDS(ON)=45mΩ (typ.) @ VGS=-2.5V RDS(ON)=60mΩ (typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged S Lead Free Available (RoHS Compliant) Applications • G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D P-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2315 Lead Free Code Handling Code Temp. Range Package Code APM2315 A : M15X X - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 1 www.anpec.com.tw APM2315A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current -1.5 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V -4 VGS=-4.5V A -16 A °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, I DS=-250µA Gate Leakage Current VGS=±10V, VDS=0V Gate-Source Charge Q gd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 Max. -20 -1 -30 -0.5 -0.7 V ±100 nA 55 VGS=-2.5V, I DS =-2.5A 45 72 VGS=-1.8V, I DS =-2A 60 100 ISD =-0.5A, VGS =0V -0.75 -1.3 12 16 2.1 µA -1 35 VDS=-10V, VGS=-4.5V, IDS=-4A Unit V VGS=-4.5V, I DS =-4A Gate Charge Characteristics b Qg Total Gate Charge Q gs Typ. T J=85°C VDS=VGS , IDS=-250µA Diode Forward Voltage Min. VDS=-16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM2315A mΩ V nC 2.9 2 www.anpec.com.tw APM2315A Electrical Characteristics (Cont.) Symbol Parameter (T A = 25°C unless otherwise noted) Test Condition APM2315A Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time Ω 8 1135 pF 200 110 6 12 7 14 72 131 45 82 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 3 www.anpec.com.tw APM2315A Typical Characteristics Drain Current Power Dissipation 5.0 0.9 4.5 0.8 4.0 -ID - Drain Current (A) 1.0 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 3.5 3.0 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o TA=25 C,VG=-4.5V o 0.0 TA=25 C 0 20 40 0.0 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 30 Rd s(o n) Lim it 10 -ID - Drain Current (A) 0 300µs 1ms 1 10ms 100ms 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 Rev. B.1 - Aug., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2315A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 16 160 VGS= -3,-4,-5,-6,-7,-8,-9,-10V 140 -2V 12 -ID - Drain Current (A) RDS(ON) - On - Resistance (mΩ) 14 10 8 6 4 -1.5V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 120 100 80 VGS= -2.5V 60 VGS= -4.5V 40 20 0 3.0 VGS= -1.8V 0 4 8 12 16 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 16 1.8 14 1.6 20 Normalized Threshold Voltage IDS = -250µA -ID - Drain Current (A) 12 10 8 o 6 Tj=125 C 4 o Tj=-55 C o Tj=25 C 2 0 0.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.5 1.0 1.5 2.0 2.5 0.0 -50 -25 3.0 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2315A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 1.8 VGS = -4.5V IDS = -4A 10 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o RON@Tj=25 C: 35m Ω 0.4 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS= -10V 9 I = -4A D -VGS - Gate - source Voltage (V) 1600 1400 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 1800 1200 Ciss 1000 800 600 400 Coss 200 Crss 0 0.3 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 Rev. B.1 - Aug., 2005 5 10 15 20 25 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 0 6 www.anpec.com.tw APM2315A Packaging Information SOT-23 D B 3 E H 2 1 e A L A1 Dim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 1.90/2.1 BSC. Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 Inches Max. 1.30 0.10 0.51 0.25 3.10 1.80 2.40 0.37 C 3.00 7 www.anpec.com.tw APM2315A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 8 www.anpec.com.tw APM2315A Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 D1 9 Ko www.anpec.com.tw APM2315A Carrier Tape & Reel Dimensions T2 J C A B T1 Application SOT-23 A B C J 178±1 60 ± 1.0 12.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 φ0.1MIN 4.0 T1 P E 1.4 W 8.0+ 0.3 - 0.3 4.0 1.75 P1 Ao Bo Ko t 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 T2 (mm) Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Aug., 2005 10 www.anpec.com.tw