MOSPEC DB101 THRU DB107 SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES ＊Glass Passivated chip junction ＊High forward surge current capability ＊Ideal for printed circuit board ＊High temperature soldering guaranteed: 260oc/10 second at 5 lbs. (2.3kg) tension MECHANICAL DATA ＊Case: Transfer molded plastic ＊Epoxy: UL94V-O rate flame retardant ＊Terminals：Lead Solderable Per MIL-STD-202 method 208 ＊Polarity：As Marking on Body ＊Mounting Position: Any ＊Weight： 0.04 ounce, 1.0 gram MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS * Rating at 25℃ ambient temperature unless otherwise specified * Single phase,half wave. 60Hz, resistive or inductive load. * For capacitive load derate current bh 20 % Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V Average Rectifier Forward Current (Note 1) @ TA=50℃ IO(AV) Non-Repetitive Peak Surge Current 8.3 ms Single half sine-wave superimposed on rated load ( JEDEC Method) IFSM 50 A Forward Voltage (per element) ( IF =1.0 Amp) VFM 1.1 V Peak Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 5.0 500 uA Rating for Fusing( t<8.3 ms) I2t 10 A2s Typical Junction Capacitance per element (Note2) CJ 25 pF Rθ jA 40 k/W TJ , Tstg -65 to +150 ℃ Typical Thermal Resistance (note 3) Operating and Storage Temperature Range 1.0 Note: 1 Lead maintained at ambient temperature at a distance of 9.5 mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2 3. Thermal resistance junction to ambient, mounted on PC board with 12 mm copper pad. A DB101 thru DB107 FIG-2 TYPICAL FORWARD CHARACTERISITICS NSTANTANEOUS FORWARD CURRENT (Amp.) AVERAGE FORWARD RECTIFIED CURRENT (Amp.) FIG-1 FORWARD CURRENT DERATING CURVE O TJ=25 C Pulse Width=300us 1% Duty Cycle CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 PEAK FORWARD SURGE CURRENT FIG-4 TYPICAL JUNCTION CAPACITANCE O TJ=25 C f=1MHz O JUNCTION CAPACITANCE (PF) IIFSM, PEAK FWD SURGE CURRENT (A) TJ=25 C Single Half Sine Wave (JEDEC Method) NUMBER OF CYCLES AT 60 Hz REVERSE VOLTAGE (Volts) IR, INSTANTANEOUS REVERSE CURRENT (uA) FIG-5 TYPICAL REVERSE CHARACTERISTICS O TJ=125 C O TJ=25 C PERCENT OF RATED REVERSE VOLTAGE (﹪)