HP MSA-0100 Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0100
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.3 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
Description
The MSA-0100 is a high performance
silicon bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip. This
MMIC is designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX, silicon
bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metallization to
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge or
ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS section,
“Chip Use”.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
C block
IN
C block
OUT
MSA
Vd = 5 V
5965-9689E
6-242
Chip Outline[1]
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
MSA-0100 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
40 mA
200 mW
+20 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 45°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 22.2 mW/°C for TMS␣ >␣ 191 °C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 17 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 0.7 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
dB
19.0
dB
± 0.6
GHz
1.3
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.3:1
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
5.5
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
tD
Group Delay
f = 0.5 GHz
psec
150
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.5
5.0
Max.
5.5
–9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
MSA-0100-GP4
Devices Per Tray
100
6-243
MSA-0100 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 17 mA)
S11
Freq.
GHz
Mag
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.07
.07
.06
.06
.05
.04
.04
.08
.12
.15
.19
.25
.27
.28
.28
S21
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
171
161
152
143
133
115
84
3
–39
–76
–102
–122
–137
–147
–157
–171
19.0
18.9
18.8
18.6
18.5
18.2
17.7
17.1
15.5
13.7
12.2
10.8
9.4
8.2
7.0
6.0
8.91
8.82
8.72
8.56
8.37
8.15
7.68
7.17
5.95
4.86
4.09
3.47
2.96
2.56
2.24
2.00
174
169
163
156
151
146
136
126
106
90
82
71
60
51
42
35
–22.7
–22.5
–22.3
–22.4
–22.1
–21.9
–21.3
–20.3
–19.3
–17.9
–16.9
–16.4
–15.6
–15.2
–14.8
–14.4
.073
.075
.077
.076
.079
.080
.086
.096
.109
.127
.142
.151
.165
.173
.182
.190
2
6
9
12
14
19
22
26
32
32
36
36
34
32
29
28
.10
.11
.10
.11
.11
.12
.12
.12
.10
.08
.06
.06
.07
.10
.13
.16
–11
–24
–35
–44
–53
–60
–75
–88
–107
–128
–130
–125
–107
–86
–80
–77
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
MSA-0100 Typical Performance, TA = 25°C
(unless otherwise noted)
21
0.1 GHz
0.5 GHz
18
20
Gain Flat to DC
5
0
0.1
0.3 0.5
1.0
3.0
6.0
10
15
20
FREQUENCY (GHz)
25
30
I d (mA)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
7.0
I d = 13 mA
I d = 17 mA
I d = 20 mA
I d = 20 mA
4
6.5
I d = 17 mA
NF (dB)
2
6.0
I d = 13 mA
5.5
–2
5.0
0.2 0.3
0.5
1.0
2.0
4.0
4
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-244
P1 dB
2
0
–2
–55
–25
+25
+85
+125
TEMPERATURE (°C)
Figure 2. Power Gain vs. Current.
6
6
4
3
0
6
10
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, Id = 17 mA.
NF (dB)
9
8
NF
2.0 GHz
P1 dB (dBm)
G p (dB)
Gp (dB)
GP
8
15
6
P1 dB (dBm)
18
1.0 GHz
12
–4
0.1
20
16
15
0
G p (dB)
25
MSA-0100 Chip Dimensions
NOT APPLICABLE
INPUT
394 µm
15.5 mil
GROUND
OPTIONAL
OUTPUT[1]
394 µm
15.5 mil
Chip thickness is 114 µm/4.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side.
Note 1: Output contact is made by die attaching
the backside of the die.
6-245
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