TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E (2 pls) C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N I H • SUITABLE FOR BROAD BAND APPLICATIONS DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Inches 0.360 0.500 45° 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005 • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 250W 70V ±20V 15A –65 to 150°C 200°C * Per Side Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 D1018UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source VGS = 0 ID = 100mA VDS = 28V VGS = 0 3 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage * ID = 10mA VDS = VGS 7 V gfs VDS = 10V ID = 3A IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * 70 1 V 2.4 S 10 dB 50 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 100W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 500MHz IDQ = 1.2A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 180 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 90 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 7.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 0.7°C / W Prelim. 10/95