EPIGAP EPC-525-1.4 Photodiode-chip Datasheet

Photodiode-Chip
EPC-525-1.4
Preliminary
11.04.2007
rev. 03/07
Wavelength range
Type
Technology
Electrodes
Green, selective
Integrated filter
GaP
P (anode) up
typ. dimensions (µm)
1360
1000
960
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Ø100
PD-13
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480…560
nm), low cost chip
Applications
Nearly V‫ ג‬matched
detection, measurement
systems, daylight sensors
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
A
1.79
mm²
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
Active area
Temperature coefficient of I D
T = -40…120°C
TCID
4.7
%/K
Temperature coefficient of I PH
T = -40…120°C
TCIPH
0.25
%/K
Temperature coefficient of λc
T = -40…120°C
TCλc
0.15
nm/K
Typ
Max
Unit
560
nm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Spectral range at 0.5 max.
VR = 0 V
λ0.5
480
Responsivity at 525 nm1
VR = 0 V
Sλ
0.04
0.08
0.15
A/W
Responsivity at 525 nm2
VR = 0 V
Sλ
0.15
0.25
0.38
A/W
Spectral bandwidth at 50%
VR = 0 V
∆λ0,5
75
Dark current (Ee = 0 W/m²)
VR = 5 V
ID
5
30
pA
Central sensitivy wavelength
VR = 0 V
λC
525
535
nm
510
nm
1
Measured on bare chip on TO-18 header
Measured on epoxy covered chip on TO-18 header
2
Labeling
Type
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-525-1.4
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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Photodiode-Chip
EPC-525-1.4
Preliminary
11.04.2007
rev. 03/07
Responsitivity spectrum
Sensitivity (arb. units)
1,0
0,8
0,6
0,4
0,2
0,0
400
450
500
550
600
Wavelength [nm]
Relative Photocurrent vs. Temperature of EPC-525-1.4
1,30
UR = 5V
TK = 0,25%/K
1,25
1,20
Relative Photocurrent
1,15
1,10
1,05
1,00
0,95
0,90
0,85
0,80
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
EPIGAPOptoelektronik GmbH
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
2 of 3
Photodiode-Chip
EPC-525-1.4
Preliminary
11.04.2007
rev. 03/07
Dark Current vs. Temperature of EPC-525-1.4
100
UR = 5V
TK = 1,047 times/K
Dark Current (pA)
10
1
0,1
-40
-20
0
20
40
Temperature (°C)
60
80
100
120
EPIGAPOptoelektronik GmbH
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
3 of 3
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