Zetex BSR40 Sot89 npn silicon planar medium power transistor Datasheet

BSR40
BSR42
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
✪
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPES – BSR40 – BSR30
BSR42 – BSR32
PARTMARKING DETAIL –
C
BSR40 – AR1
BSR42 – AR3
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSR40
BSR42
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
100
mA
Base Current
IB
Power Dissipation at Tamb =25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
BSR40
Breakdown Voltage BSR42
V(BR)CBO
70
90
V
V
IC=100µA
IC=100µA
Collector-Emitter
BSR40
Breakdown Voltage BSR42
V(BR)CEO
60
80
V
V
IC=10mA
IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA
Collector Cut-Off
Current
ICBO
100
50
nA
µA
VCB=60V
VCB=60V, Tamb=125°C
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC =150mA, IB=15mA
IC =500mA, IB=50mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
1.2
V
V
IC =150mA, IB=15mA
IC =500mA, IB=50mA
Static Forward
Current Transfer Ratio
hFE
10
40
30
MAX.
IC =100µA, VCE=5V
IC =100mA, VCE=5V
IC =500mA, VCE=5V
120
Collector Capacitance
Cc
12
pF
Emitter Capacitence
Ce
90
pF
VEB =0.5V, f=1MHz
Transition Frequency
fT
MHz
IC=50mA, VCE=10V
f =35MHz
VCC =20V, IC =100mA
IB1 =-IB2 =-5mA
100
Turn-On Time
Ton
250
ns
Turn-Off Time
Toff
1000
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
3 - 67
VCB =10V, f =1MHz
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