Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUK-E1-AY ∗1 NP160N04TUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Tape 800 p/reel Packing Taping (E1 type) Taping (E2 type) Package TO-263-7pin (MP-25ZT) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol Ratings 40 ±20 ±160 ±640 250 1.8 175 −55 to +175 56 313 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.60 83.3 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. RG = 25 Ω, VGS = 20 Æ 0 V R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Page 1 of 6 NP160N04TUK Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(th) | yfs | MIN. TYP. 2.0 60 RDS(on) 3.0 120 1.25 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 7200 1040 390 30 16 100 13 126 32 31 0.9 62 110 MAX. 1 ±100 4.0 1.50 Unit μA nA V S mΩ Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5 V, ID = 80 A VGS = 10 V, ID = 80 A pF pF pF ns ns ns ns nC nC nC V ns nC VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 80 A, VGS = 10 V, RG = 0 Ω 10800 1560 710 70 40 200 40 189 1.5 VDD = 32 V, VGS = 10 V, ID = 160 A IF = 160 A, VGS = 0 V IF = 160 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Page 2 of 6 NP160N04TUK Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 300 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 250 200 150 100 50 0 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(Pulse) = 640 A 100 RDS(ON) Limited (VGS = 10 V) =1 00 µs 1m s ID(DC) = 160 A 10 m 10 s ID - Drain Current - A PW Power Dissipation Limited Secondary Brakedown Limited 1 DC TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 1 Rth(ch-C) = 0.60°C/W 0.1 Single pulse 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Page 3 of 6 NP160N04TUK Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 700 1000 500 400 300 200 VGS = 10 V Pulsed 100 0 0.0 TA = −55°C 25°C 80°C 150°C 175°C 100 ID - Drain Current - A ID - Drain Current - A 600 10 1 0.1 VDS = 10 V Pulsed 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0 2 4 5 6 GATE TO SOURCE THRESHOLD VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN vs. CHANNEL TEMPERATURE CURRENT 4 VDS = VGS ID = 250 μA 3 2 1 0 -100 -50 0 50 100 150 1000 TA = −55°C 25°C 85°C 150°C 175°C 100 10 VDS = 5 V Pulsed 1 1 200 10 100 1000 ID - Drain Current - A Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 4 3 2 1 VGS = 10 V Pulsed 0 1 10 100 ID - Drain Current - A R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 3 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V VDS - Drain to Source Voltage - V 1 4 ID = 80 A Pulsed 3 2 1 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 NP160N04TUK Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 4 VGS = 10 V ID = 80 A Pulsed 3 Ciss, Coss, Crss - Capacitance - pF 2 1 0 -100 Ciss 1000 Coss 0 50 100 150 0.1 200 1 Tch - Channel Temperature - °C 1000 35 VDS - Drain to Source Voltage - V td(on) tr 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(off) 100 10 VDS - Drain to Source Voltage - V VDD = 20 V VGS = 10 V RG = 0 Ω tf 14 VDD = 32 V 20 V 8V 30 25 12 10 20 8 VGS 15 6 10 4 VDS 5 1 10 100 0 1000 2 ID = 160 A 0 1 0.1 20 40 60 80 100 120 0 140 QG - Gate Charge - nC ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 0V VGS = 10 V 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Crss VGS = 0 V f = 1 MHz 100 -50 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 10 1 Pulsed 0.1 10 di/dt = 100A/µs VGS = 0 V 1 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 1.4 0.1 1 10 100 1000 IF - Drain Current - A Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE NP160N04TUK Chapter Title Package Drawing (Unit: mm) 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 1.27 TYP. 0.025 to 0.25 0.5 ± 0 .2 0 to 8° 1 2 34 56 7 2.54 ± 0.25 0.6 ± 0.15 14.85 ± 0.5 8 9.15 ± 0.2 7.6 TYP. 8.4 TYP. 1.2 ± 0.3 TO-263-7pin (MP-25ZT) (Mass: 1.5 g TYP.) 2.5 0.25 1. Gate 2, 3, 5, 6, 7. Source 4, 8. Fin (Drain) 10.0 ± 0.2 Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Page 6 of 6 Revision History NP160N04TUK Data Sheet Rev. Date Page 1.00 Sep 23, 2011 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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