CEL NE5520279A 3.2 v, 2 w, l&s band medium power silicon ld-mosfet Datasheet

NEC'S 3.2 V, 2 W, L&S BAND NE5520279A
MEDIUM POWER SILICON LD-MOSFET
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7x5.7x1.1 mm MAX
PACKAGE OUTLINE 79A
(Bottom View)
Source
• SINGLE SUPPLY:
2.8 to 6.0 V
Gate
1.2 MAX.
Drain
1.0 MAX.
4.4 MAX.
Drain
0.8±0.15
A
• HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
0.6±0.15
5.7 MAX.
Gate
1.5±0.2
Source
0X001
• HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
4.2 MAX.
2
• HIGH OUTPUT POWER:
+32 dBm TYP
0.4±0.15
0.8 MAX.
5.7 MAX.
0.2±0.1
0.9±0.2
DESCRIPTION
3.6±0.2
APPLICATIONS
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power amplifier
for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm
WSi gate lateral MOSFET) and housed in a surface mount
package.
• DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE5520279A
PACKAGE OUTLINE
Functional
Characteristics
SYMBOLS
POUT
GL
ηADD
Electrical DC
Characteristics
ID
CHARACTERISTICS
Output Power
79A
UNITS
MIN
TYP
dBm
30.5
32.0
Linear Gain
dB
Power Added Efficiency
%
MAX
f = 1.8 GHz, VDS = 3.2 V,
IDSQ = 700 mA, PIN = 25 dBm, except
PIN = 5 dBm for Linear Gain
10
40
TEST CONDITIONS
45
Drain Current
mA
IGSS
Gate-to-Source Leakage Current
nA
100
VGS = 5.0 V
IDSS
Saturated Drain Current
(Zero Gate Voltage Drain Current)
nA
100
VDS = 6.0 V
VTH
Gate Threshold Voltage
V
1.9
VDS = 3.5 V, IDS = 1 mA
gm
BVDSS
RTH
Transconductance
S
Drain-to-Source Breakdown Voltage
V
Thermal Resistance
800
1.0
15
°C/W
1.4
1.3
VDS = 3.5 V, IDS = 700 mA
18
IDSS = 10 μA
8
Channel-to-Case
Notes:
1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
California Eastern Laboratories
NE5520279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
UNITS
TYP
MAX
VDS
Drain Supply Voltage
V
15.0
VDS
Drain to Source Voltage
V
3.0
6.0
VGS
Gate Supply Voltage
V
5.0
VGS
Gate Supply Voltage
V
2.0
3.0
ID
Drain Current
A
0.6
IDS
Drain Current1
A
0.8
1.0
ID
Drain Current (Pulse Test)
A
1.2
PIN
Input Power
f = 1.8 GHz, VDS = 3.2 V
dBm
25
30
2
PT
Total Power Dissipation
W
12.5
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1 s.
ORDERING INFORMATION
PART NUMBER
NE5520279A-T1-A
QTY
Note:
1. Duty Cycle ≤ 50%, Ton ≤ 1 s.
LARGE SIGNAL IMPEDANCE
(VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz)
FREQUENCY (GHz)
Zin (Ω)
ZOL (Ω) 1
1.8
1.77 −j6.71
1.25 −j5.73
Note:
1. ZOL is the conjugate of optimum load impedance at given
voltage, idling current, input power.
NE5520279A
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
25
IDS
ηadd
15
20
25
30
50
250
25
0
0
10
75
15
1000
50
500
25
20
25
30
25
4
f = 1.8 GHz
∆f = 1 MHz
VDS = 3.2 V
IDQ = 700 mA
IM3
-40
IM5
-50
-60
-70
10
25
20
15
30
35
Average Two Tone Ouput Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Pout
ηd
2000
100
1500
75
1000
50
ηadd
25
IDS
500
20
10
15
20
25
Input Power,Pin (dBm)
30
40
0
35
25
0
Output Power, Pout (dBm)
2500
f = 2.00 GHz
VDS = 5.0 V
IDQ = 300 mA
0
0
Input Power,Pin (dBm)
30
15
250
-30
0
0
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
35
15
3
2
1
0
-20
IMD, (dBc)
1500
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
Ids(mA)
100
ηadd
10
50
15
-10
2000
IDS
20
40
Output Power, Pout (dBm)
2500
ηd
5
500
ηadd
20
IMD vs. TWO TONE OUTPUT POWER
Pout
25
10
75
Gate to Source Voltage, Vgs (V)
Ids(mA)
Output Power, Pout (dBm)
30
750
ηd
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
f = 1.8 GHz
VDS = 3.2 V
IDQ = 700 mA
100
25
Input Power,Pin (dBm)
35
1000
IDS
35
2500
f = 2.00 GHz
VDS = 5.0 V
Pin = 27 dBm
30
Pout
2000
100
1500
75
1000
50
500
25
ηd
ηadd
25
IDS
20
15
0
1
2
3
Gate to Source Voltage, Vgs (V)
4
0
0
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
15
10
5
500
30
Pout
Ids(mA)
10
75
750
ηd
20
100
1250
f = 1.8 GHz
VDS = 3.2 V
Pin = 25 dBm
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
1000
Pout
Output Power, Pout (dBm)
30
35
Ids(mA)
1250
f = 1.8 GHz
VDS = 3.2 V
IDQ = 300 mA
Drain Efficiency, ηd (%)
Power Added Efficiency, ηadd (%)
Output Power, Pout (dBm)
35
Ids(mA)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
NE5520279A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
j25
j10
0
120˚
j100
90˚
60˚
S21
150˚
S11
10
25
100
50
30˚
S12
180˚
0
0˚
S22
-j10
Coordinates in Ohms
Frequency in GHz
VD = 5.0 V, ID = 400 mA
-j100
-j25
-150˚
-30˚
-120˚
-90˚
-j50
NE5520279A
VD = 5.0 V, ID = 400 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
S11
MAG
0.885
0.885
0.883
0.885
0.887
0.890
0.895
0.900
0.905
0.911
0.916
0.921
0.924
0.926
0.927
0.929
0.930
0.931
0.935
0.937
0.941
0.944
0.949
0.950
0.955
0.956
0.958
0.957
0.959
0.959
0.962
0.961
0.965
0.967
0.971
S21
ANG
-152.5
-166.9
-172.4
-175.6
-177.9
-179.8
178.7
177.3
176.0
174.6
173.6
172.2
171.0
169.9
168.7
167.5
166.3
165.2
164.1
162.9
161.8
160.6
159.5
158.3
157.3
156.3
155.4
154.5
153.8
152.9
152.5
151.5
150.8
150.1
149.6
MAG
11.510
5.882
3.896
2.897
2.278
1.865
1.569
1.346
1.168
1.024
0.911
0.812
0.728
0.655
0.594
0.541
0.494
0.451
0.415
0.384
0.356
0.329
0.305
0.285
0.267
0.248
0.232
0.217
0.204
0.192
0.180
0.170
0.161
0.152
0.144
S12
ANG
98.5
87.7
80.8
75.2
70.1
65.3
60.7
56.5
52.4
48.5
44.7
40.9
37.5
34.1
30.8
27.9
25.1
22.4
19.6
17.1
14.9
12.6
10.2
7.7
5.8
4.0
2.0
0.0
- 1.6
- 3.1
- 4.5
- 6.1
- 7.6
- 8.8
- 10.0
MAG
0.021
0.022
0.022
0.021
0.021
0.020
0.020
0.019
0.018
0.017
0.016
0.015
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.009
0.008
0.007
0.006
0.006
0.005
0.005
0.004
0.003
0.003
0.003
0.002
0.002
0.002
0.002
0.003
-60˚
S22
ANG
10.3
0.2
- 5.2
- 9.2
- 12.9
- 15.7
- 19.3
- 21.8
- 24.5
- 27.2
- 28.8
- 30.8
- 33.3
- 33.9
- 36.0
- 36.6
- 37.3
- 38.5
- 38.5
- 38.8
- 36.9
- 40.8
- 36.6
- 36.0
- 34.6
- 32.7
- 31.4
- 27.2
- 22.0
- 5.2
- 1.3
27.2
56.3
79.5
86.6
MAG
0.830
0.833
0.840
0.849
0.851
0.856
0.861
0.869
0.876
0.882
0.894
0.898
0.903
0.907
0.914
0.921
0.925
0.926
0.930
0.937
0.942
0.941
0.942
0.947
0.952
0.953
0.952
0.954
0.958
0.961
0.960
0.960
0.964
0.965
0.963
ANG
-170.1
-175.4
-177.5
-178.5
-179.3
179.9
179.1
178.4
177.9
177.2
176.5
175.5
174.7
173.9
172.9
172.2
171.5
170.7
169.8
169.0
168.5
167.8
167.0
166.0
165.5
164.9
164.2
163.2
162.4
161.9
161.1
160.2
159.4
158.6
157.6
K
MAG1
0.03
0.07
0.11
0.14
0.20
0.27
0.30
0.32
0.36
0.39
0.36
0.42
0.47
0.62
0.68
0.76
0.98
1.22
1.35
1.33
1.45
1.74
2.04
2.04
2.04
2.59
3.32
4.54
5.69
5.78
9.71
9.31
9.54
7.96
5.89
(dB)
27.43
24.21
22.51
21.31
20.41
19.66
19.05
18.55
18.12
17.79
17.48
17.21
16.93
16.84
16.65
16.54
16.58
13.67
12.97
12.95
12.62
11.58
11.01
11.00
11.27
10.34
9.53
8.76
8.58
8.26
7.87
7.08
7.19
6.89
6.46
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K
2
-1
). When K ≤ 1, MAG is undefined and MSG values are used.
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MSG =
|S21|
,K=
|S12|
1 + | ∆ | 2 - |S11| 2 - |S22| 2
2 |S12 S21|
, ∆ = S11 S22 - S21 S12
NE5520279A
APPLICATION CIRCUIT (2.40-2.48 GHz)
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
VG
VD
J3
C3
C9
C11
4.0
J4
C2
C8
C10
1.7
P1
GND
1.0
Gate
0.5
5.9
C12
1.2
Drain
C13
IN
C5
C6
OU
C15
A2
C14
R1
U1
98
J1
C1
J2
C4
RF IN
Source
RF OUT
Through hole φ 0.2 × 33
0.5
0.5
6.1
er=4.2
500855
t=0.028
5.74mm
.30mm
.63mm
J4
J3
+Vd
+Vg
C13
C11
C9
C2
C3
C10
C8
C12
R1
C1
J1
C5
RF OUTPUT
RF INPUT
NE5520279A
C7
C14
C4
C15
NE5520279A PARTS LIST
1
1
4
2
1
1
1
1
2
1
2
2
2
1
1
1
2
1
SD-500881
TF-100637
MA101J
MCR03J200
600S2R7CW
600S2R2BW
600S1R2BW
600S5R6CW
600S3R3CW
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE5520279A
703401
1250-003
2052-5636-02
FD-500855B
J2
C2,C3
R1
C4
C15
C14
C1, C5
C6
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
PCB
SCHEMATIC DIAGRAM NE5520279A-EVAL
TEST CIRCUIT BLK
2-56 x 3/16 PHILLIPS PAN HEAD
CASE 1 100pF CAP MURATA
0603 20 OHM RESISTOR ROHM
0603 2.7pF CAP ATC
0603 2.2pF CAP ATC
0805 1.2pF CAP ATC
0603 5.6pF CAP ATC
0603 3.3pF CAP ATC
CASE B 4.7 uF CAP AVX
0805 .1uF CAP MURATA
0805 1000 pF CAP MURATA
IC NEC
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
S-BAND MODULE FABRICATION DRAWING
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
NE5520279A
TYPICAL APPLICATION CIRCUIT PERFORMANCE
(TA = 25°C)
OUTPUT POWER vs.
INPUT POWER
-20.0
34
f= 2.44 GHz
-20.0
f= 2.44 GHz
-20.0
32
-25.0
30
IM3 (dBc)
Output Power, POUT (dBm)
36
IM3 vs.
OUTPUT POWER
28
26
24
22
20
-30.0
-35.0
-40.0
3.6 V, 300 mA
3.6 V, 300 mA
3.6 V, 500 mA
6.0 V, 300 mA
6.0 V, 500 mA
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Input Power, PIN (dBm)
-45.0
3.6 V, 500 mA
6.0 V, 300 mA
-50.0
-55.0
12
6.0 V, 300 mA
14
16
18
20
22
24
26
28
30
Output Power, POUT (dBm), Each Tone
NE5520279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
VP215
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per pin of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/03/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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