ON NTD65N03RT4 Power mosfet 25 v, 65 a, single n-channel, dpak Datasheet

NTD65N03R
Power MOSFET
25 V, 65 A, Single N−Channel, DPAK
Features
•
•
•
•
Low RDS(on)
Ultra Low Gate Charge
Low Reverse Recovery Charge
Pb−Free Packages are Available
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V(BR)DSS
RDS(on) TYP
Applications
• Desktop CPU Power
• DC−DC Converters
• High and Low Side Switch
ID MAX
6.5 mW @ 10 V
25 V
65 A
9.7 mW @ 4.5 V
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
V
Gate−to−Source Voltage
VGS
"20
V
ID
65
A
Continuous Drain
Current (RqJC) Limited
by Wire
TC = 25°C
TC = 85°C
Steady
State
Power Dissipation
(RqJC)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TC = 25°C
ID
32
A
TC = 25°C
PD
50
W
TA = 25°C
Steady
State
Steady
State
Pulsed Drain Current
ID
TA = 85°C
PD
1.88
W
TA = 25°C
ID
9.5
A
tp = 10 ms
Operating Junction and Storage
Temperature
Drain−to−Source (dv/dt)
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V, IL = 12 A,
L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1 2
1
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
7.4
PD
1.3
W
IDM
130
A
TJ, Tstg
−55 to
175
°C
dv/dt
2.0
V/ns
IS
2.1
A
EAS
71.7
mJ
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.15 in sq) [1 oz] including traces.
4
4
A
11.4
8.9
TA = 85°C
4
3
TA = 25°C
TA = 25°C
S
45
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
2 3
CASE 369AC
3 IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
YWW
65
N03G
Continuous Drain
Current (RqJC) Limited
by Die
G
YWW
65
N03G
Parameter
1
Gate
2
Drain
3
Source
Y
WW
65N03
G
1
Gate
3
Source
2
Drain
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1
Publication Order Number:
NTD65N03R/D
NTD65N03R
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
2.5
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
80
Junction−to−Ambient − Steady State (Note 4)
RqJA
115
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
29.5
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
19.2
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
1.5
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.0
1.74
4.8
mV/°C
VGS = 10 V, ID = 30 A
6.5
8.4
VGS = 4.5 V, ID = 30 A
9.7
14.6
VDS = 15 V, ID = 15 A
27
mW
mHos
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1177
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
pF
16
nC
218
Total Gate Charge
QG(TOT)
12.2
Threshold Gate Charge
QG(TH)
1.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
6.08
td(on)
6.3
VGS = 5.0 V, VDS = 10 V,
ID = 30 A
1400
555
2.95
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDS = 25 V,
ID = 30 A, RG = 3.0 W
tf
ns
18.6
20.3
8.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.85
TJ = 125°C
0.72
tRR
28.8
Charge Time
ta
12.8
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
1.1
V
ns
16
QRR
20
LS
2.49
nC
PACKAGE PARASITIC VALUES
Source Inductance
3.
4.
5.
6.
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
TA= 25°C
0.02
1.75
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).
Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
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2
nH
3.46
W
NTD65N03R
140
10 V
7V
6V
120
TJ = 25°C
4.5 V
5.5 V
100
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
140
5V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
80
60
40
20
0
2
4
6
8
80
60
40
TJ = 125°C
TJ = 25°C
20
10
TJ = −55°C
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
0.026
0.022
0.018
0.014
TJ = 150°C
0.01
TJ = 125°C
0.006
TJ = 25°C
0.002
TJ = −55°C
20
40
60
80
100
120
140
6
0.03
VGS = 4.5 V
0.026
0.022
0.018
TJ = 150°C
0.014
TJ = 125°C
0.01
TJ = 25°C
0.006
TJ = −55°C
0.002
0
20
40
60
80
100
120
140
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
1.6
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.4
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.03
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
120
1.2
TJ = 150°C
1000
1.0
0.8
0.6
−50
TJ = 125°C
100
−25
0
25
50
75
100
125
150
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
20
NTD65N03R
VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
2400
TJ = 25°C
C, CAPACITANCE (pF)
2000
1600
Ciss
1200
800
Coss
400
Crss
0
0
4
8
12
16
20
8
VGS
6
QT
4
Q1
Q2
2
ID = 30 A
TJ = 25°C
0
0
4
12
16
Qg, TOTAL GATE CHARGE (nC)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
IS, SOURCE CURRENT (AMPS)
70
VDS = 10 V
ID = 35 A
VGS = 10 V
tf
td(off)
tr
100
td(on)
10
VGS = 0 V
60
50
40
30
20
TJ = 150°C
10
TJ = 25°C
0
1
1
10
100
0
0.2
0.4
0.6
0.8
1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
I D, DRAIN CURRENT (AMPS)
t, TIME (ns)
8
10 ms
100 ms
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTD65N03R
ORDERING INFORMATION
Package
Shipping †
DPAK−3
75 Units / Rail
NTD65N03RG
DPAK−3
(Pb−Free)
75 Units / Rail
NTD65N03RT4
DPAK−3
2500 / Tape & Reel
DPAK−3
(Pb−Free)
2500 / Tape & Reel
NTD65N03R−1
DPAK−3 Straight Lead
75 Units / Rail
NTD65N03R−1G
DPAK−3 Straight Lead
(Pb−Free)
75 Units / Rail
NTD65N03R−35
DPAK Straight Lead Trimmed
(3.5 ± 0.15 mm)
75 Units / Rail
NTD65N03R−35G
DPAK Straight Lead Trimmed
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units / Rail
Order Number
NTD65N03R
NTD65N03RT4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD65N03R
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
Z
H
3
U
F
J
L
D 2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD65N03R
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
3 IPAK, STRAIGHT LEAD
CASE 369AC−01
ISSUE O
B
V
C
E
R
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
A
SEATING PLANE
K
W
F
J
G
H
D
3 PL
0.13 (0.005) W
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7
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
NTD65N03R
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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NTD65N03R/D