NTE3036 Phototransistor Silicon NPN Photo Darlington Light Detector Description: The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for use in applications such as industrial inspection, processing and control, counter, sorters, switching and logic circuit or any design requiring very high radiation sensitivity at low light levels. Features: D Popular TO18 Type Hermetic Package for Easy Handling and Mounting D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application D Minimum Light Current: 12mA @ H = 0.5mW/cm2 D External Base for Added Control Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Light Current, IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 10 100 nA Static Characteristics Collector Dark Current ICEO VCE = 10V, H ∼ 0 Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA 50 100 – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA 40 80 – V Emitter–Base Breakdwon Voltage V(BR)EBO IE = 100µA 10 15.5 – V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 12 20 – mA – 0.6 1.0 V Optical Characteristics Light Current Collector–Emitter Saturation Voltage IL VCE(sat) VCC = 5V, RL = 10Ω, Note 1 IL = 10mA, H = 2mW/cm2 at 2870°K Photo Current Rise Time tr RL = 10Ω, IL = 1mA Peak, Note 2 – 15 100 µs Photo Current Fall Time tf RL = 10Ω, IL = 1mA Peak, Note 2 – 65 150 µs Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color temperature of 2780°K. Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium– arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs, IL = 1mA peak. .228 (5.79) Max .185 (4.69) .177 (4.5) .276 (7.01) Max .500 (12.7) Min .018 (0.45) Dia Typ .100 (2.54) Dia Base Emitter Collector/Case