YENYO MCR100-6 Sensitive gate / silicon controlled rectifier Datasheet

MCR100
0.8A SCRs
Series
Sensitive Gate / Silicon Controlled Rectifiers
Main features
Symbol
Value
Unit
IT(RMS)
0.8A
A
VDRM/VRRM
400 and 600
V
I GT(Q1)
200
uA
B
B
B
B
B
A
G
DESCRIPTION
These devices are intened to be interfaced directly to
microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
Weight : 0.22 gram
K
K
GA
TO92
Absolute maximum ratings
Symbol
RMS on-state current
( 180° conduction angle )
IBT(RMS)B
ITSM
B
F = 50Hz
Non repetitive surge on-state current
( 1/2 Cycle,Sine Wave , Tj initial=25℃ ) F = 60Hz
B
I 2t
I2t Value for fusing
Critical rate of rise of on-state current
IG = 10mA diG = 0.1A/us
P
P
Parameter
P
P
dl/dt
B
IGM
PG(AV)
T stg
Tj
B
B
B
B
B
B
B
Aprit.2008
tp = 10ms
Value
Unit
0.8
A
t = 10ms
7
t = 8.3ms
8
A
0.24
A2s
30
A/us
1
A
0.1
-40 to +150
-40 to +110
W
P
P
B
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Rev.1
℃
1/5
MCR100
Electrical characteristics (Tj = 25℃, unless otherwise specified)
Symbol
MCR100-
Test conditions
VDRM,VRRM
IBGT(1)
B
VBGTB
IH B(2)
IL
MAX.
VBDB = 7V RL=100 ohm
Unit
6S
6
8
400
400
600
V
25
200
200
uA
IT = 50 mA RGK =1kΩ
MAX.
MAX.
0.8
5
V
mA
IG = 1mA RGK =1kΩ
MAX.
10
mA
dV/dt (2) VD = 67 % VDRM RGK =1Kω Tj = 110℃
B
B
B
B
MIN.
80
75
75
V/us
Static characteristics
Symbol
VBTB (2) ITM = 1A
IBDRMB
VBDRM=VB
RRMB
B
IBRRMB
Test conditions
Tj = 25℃
tp = 380 us
Tj = 25℃
Tj = 110℃
MAX.
MAX.
Value
1.7
10
Unit
V
uA
0.1
mA
Thermal resistance
Symbol
Parameter
Value
RBth (j-l)B
Junction to lead for DC
80
RBth (j-a)B
Junction to ambient
150
Unit
℃/W
℃/W
2/4
MCR100
3/4
MCR100
4/4
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