DMN1025UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Device V(BR)DSS RDS(ON) max ID MAX TA = +25°C N-Channel 12V 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 2.5V 38mΩ @ VGS = 1.8V 6.9A 6.3A 5.5A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD protected gate. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Load Switch Power Management Functions Portable Power Adaptors Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (approximate) D2 D1 U-DFN2020-6 Type B S2 G2 D2 D1 D1 D2 G1 ESD PROTECTED G2 G1 Gate Protection Diode S1 Gate Protection Diode S1 S2 Pin1 N-CHANNEL MOSFET N-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMN1025UFDB-7 DMN1025UFDB-13 Notes: Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/quality/product_compliance_definitions/. Marking Information Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMN1025UFDB Document number: DS36668 Rev. 2 - 2 Mar 3 NB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM NB 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D April 2014 © Diodes Incorporated DMN1025UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 12 ±10 6.9 5.5 ID A 8.8 7.0 1 35 9.8 4.8 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.7 2.9 71 43 13 -55 to 150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) — 18 20 25 0.7 1 25 30 38 1.2 V Static Drain-Source On-Resistance 0.4 — — — — mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 5.2A VGS = 2.5V, ID = 4.8A VGS = 1.8V, ID = 2.5A VGS = 0V, IS = 5.4A — — — — — — — — — — — — — — 917 120 102 11.4 12.6 23.1 1.3 1.6 3.0 9.3 17.2 2.8 6.8 1.1 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns nS nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr V Test Condition VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 6.8A VDD = 6V, VGS = 4.5V, RL = 1.1Ω, RG = 1Ω IS = 5.4A, dI/dt = 100A/μs IS = 5.4A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN1025UFDB Document number: DS36668 Rev. 2 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN1025UFDB 15.0 15 VDS = 5.0V VGS = 10V VGS = 4.5V VGS = 3.0V 12.0 12 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V 9.0 VGS = 1.8V VGS = 1.2V 6.0 9 TA = 125°C VGS = 1.0V 3.0 TA = 150°C 6 TA = 85°C 3 TA = 25°C TA = -55°C 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 3 0.3 0.6 0.9 1.2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 1.5 0.025 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.1 ID = 5.2A 0.08 VGS = 1.8V 0.06 VGS = 2.5V 0.02 VGS = 4.5V 0.04 0.015 0.02 0.01 0 0.03 2 4 6 8 10 12 14 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 16 ID = 2.5A 0 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic TA = 150°C 0.025 TA = 125°C T A = 85°C 0.02 T A = 25°C 0.015 T A = -55°C 0.01 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN1025UFDB Document number: DS36668 Rev. 2 - 2 10 1.8 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.03 0 15 3 of 6 www.diodes.com VGS = 2.5V ID = 4.8A 1.6 VGS = 1.8 V ID = 2.5A 1.4 1.2 VGS = 4.5V ID = 5.2A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN1025UFDB 1 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.035 VGS = 1.8V ID = 2.5A 0.03 VGS = 2.5V ID = 4.8A 0.025 VGS = 4.5V ID = 5A 0.02 0.015 0.8 0.6 ID = 250µA 0.4 0.2 0 -50 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 15 1000 12 100 -ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature TA = 150°C 9 TA = 125°C T A = 85°C 6 TA = 25°C 3 0 RDS(on) Limited 10 DC 1 0.1 T A = -55°C 0 ID = 1mA PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C PW = 100µs VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 178°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMN1025UFDB Document number: DS36668 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1000 April 2014 © Diodes Incorporated DMN1025UFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y G X2 G1 X1 G Z DMN1025UFDB Document number: DS36668 Rev. 2 - 2 Y1 Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN1025UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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