Hanbit HDD16M64D8W-10A Ddr sdram module 128mbyte (16mx64bit), based on16mx8,4banks, 4k ref., dimm, Datasheet

HANBit
HDD16M64D8W
DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks,
4K Ref., DIMM,
Part No. HDD16M64D8W
GENERAL DESCRIPTION
The HANBiT HDD16M64D8W is 16M bit x 64 Double Data Rate SDRAM high density memory modules. The HANBiT
HDD16M64D8W consists of eight CMOS 16M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages
mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel
for each DDR SDRAM. The HDD16M64D8W is Dual In-line Memory Modules and intended for mounting into 184pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are
possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device
to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
• Part Identification
HDD16M64D8W – 10A
: 100MHz (CL=2)
HDD16M64D8W – 13A
: 133MHz (CL=2)
HDD16M64D8W – 13B
: 133MHz (CL=2.5)
• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 mil, double sided component
URL : www.hbe.co.kr
REV 2.0 (November.2002)
1
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
PIN ASSIGNMENT
P1
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
VREF
DQ1
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
NC
VSS
DQ8
DQ9
DQS1
VDDQ
CK1
/CK1
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VDDQ
DQ19
A5
DQ24
VSS
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
VSS
A1
*CB0
*CB1
VDD
*DQS8
A0
*CB2
VSS
*CB3
BA1
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
VDDQ
/WE
DQ41
/CAS
VSS
DQS5
DQ42
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
DQ43
VDD
*/CS2
DQ48
DQ49
VSS
/CK2
CK2
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
DQ57
VDD
DQS7
DQ58
DQ59
VSS
NC
SDA
SCL
VSS
DQ4
DQ5
VDDQ
DM0
DQ6
DQ7
VSS
NC
NC
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
131
132
133
134
135
136
137
NC
VDDQ
DQ12
DQ13
DM1
VDD
DQ14
DQ15
DM1
VDDQ
*BA2
DQ20
*A12
VSS
DQ21
A11
DM2
VDD
DQ22
A8
DQ23
VSS
A6
DQ28
DQ29
VDDQ
DM3
A3
VSS
DQ31
*CB4
*CB5
VDDQ
CK0
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
/CK0
VSS
*DM8
A10
*CB6
VDDQ
*CB7
VSS
DQ36
DQ37
VDD
DM4
DQ38
DQ39
VSS
DQ44
/RAS
DQ45
VDDQ
/CS0
*/CS1
DM5
VSS
DQ46
DQ47
*/CS3
VDDQ
DQ52
DQ53
*A13
VDD
DM6
DQ54
DQ55
172
173
174
175
176
177
178
179
180
181
182
183
184
VDDQ
NC
DQ60
DQ61
VSS
DM7
DQ62
DQ63
VDDQ
SA0
SA1
SA2
VDDSPD
* These pins should be NC in the system which does not support SPD
PIN
PIN DESCRIPTION
PIN
PIN DESCRIPTION
A0~A12
Address input
VDD
Power supply(2.5V)
BA0~BA1
Bank Select Address
VDDQ
Power supply for DQs(2.5V)
DQ0~DQ63
Data input/output
VREF
Power supply for reference
CB0~CB7
Check bit(Data input/output)
VDDSPD
Serial EEPROM Power supply(3.3)
DQS0~DQS7
Data Strobe input/output
VSS
Ground
DM0~DM7
Data-in Mask
SA0~SA2
Address in EEPROM
CK0~CK2,/CK0~/CK2
Clock input
SDA
Serial data I/O
CKE0
Clock enable input
SCL
Serial clock
/CS0
Chip Select input
/WE
Write enable
/RAS
Row Address strobe
VDDID
VDD indentification flag
URL : www.hbe.co.kr
REV 2.0 (November.2002)
2
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
/CAS
Column Address strobe
NC
No connection
FUNCTIONAL BLOCK DIAGRAM
URL : www.hbe.co.kr
REV 2.0 (November.2002)
3
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNTE
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ supply relative to Vss
VDDQ
-0.5 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
PD
8.0
W
Short circuit current
IOS
50
Notes: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
mA
Voltage on any pin relative to Vss
Power dissipation
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
POWER & DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C) )
PARAMETER
Supply Voltage
I/O Supply Voltage
SYMBOL
MIN
MAX
UNIT
VDD
2.3
2.7
V
VDDQ
2.3
2.7
V
NOTE
I/O Reference Voltage
VREF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination Voltage(system)
VTT
VREF – 0.04
VREF + 0.04
V
2
Input High Voltage
VIH (DC)
VREF + 0.15
VREF + 0.3
V
4
Input Low Voltage
VIL (DC)
-0.3
VREF - 0.15
V
4
Input Voltage Level, CK and /CK inputs
VIN (DC)
-0.3
VDDQ + 0.3
V
Input Differential Voltage, CK and /CK inputs
VID (DC)
0.3
VDDQ + 0.6
V
3
Input crossing point voltage, CK and CK inputs
VIx (DC)
1.15
1.35
V
5
Input leakage current
I LI
-2
2
uA
Output leakage current
I OZ
-5
5
uA
Output High current (VOUT = 1.95V)
I OH
-16.8
mA
Output Low current (VOUT = 0.35V)
I OL
16.8
mA
Output High Current(Half strengh driver)
IOH
-9
mA
Output High Current(Half strengh driver)
IOL
9
mA
Notes
1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on VREF,
bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise coupled
TO VREF, both of which may result in VREF noise. VREF should be de-coupled with an inductance of £ 3nH.
2. VTT is not applied directly to the device. V TT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.
5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
6. These charactericteristics obey the SSTL-2 class II standards.
URL : www.hbe.co.kr
REV 2.0 (November.2002)
4
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
DDR SDRAM IDD SPEC TABLE
SYMBOL
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
UNIT
IDD0
840
760
760
mA
IDD1
1040
960
960
mA
IDD2P
28
24
24
mA
IDD2F
200
176
176
mA
IDD2Q
144
120
120
mA
IDD3P
280
280
280
mA
IDD3N
440
440
440
mA
IDD4R
1280
1136
1136
mA
IDD4W
1216
1040
1040
mA
IDD5
1480
1480
1480
mA
Normal
16
16
16
mA
Low power
8
8
8
mA
2640
2400
2400
mA
NOTE
IDD6
IDD7A
Optional
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ
loading cap.
AC OPERATING CONDITIONS
PARAMETER/ CONDITION
STMBOL
MIN
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH (AC)
VREF + 0.31
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL (AC)
Input Differential Voltage, CK and CK inputs
VID (AC)
Input Crossing Point Voltage, CK and CK inputs
VIX (AC)
MAX
UNIT
NOTE
3
VREF - 0.31
V
3
0.7
VDDQ+0.6
V
1
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Note 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V IX is expected to equal 0.5* VDDQ of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simulation.
the AC and DC input specificatims are refation to a VREF envelope that has been bandwidth limited 20MHz.
AC OPERATING TEST CONDITIONS
PARAMETER
VALUE
UNIT
Input reference voltage for Clock
0.5 * VDDQ
V
Input signal maximum peak swing
1.5
V
Input signal minimum slew rate
0.5
V/ns
VREF+0.31/VREF-0.31
V
Input timing measurement reference level
VREF
V
Output timing measurement reference level
VTT
V
See Load Circuit
V
Input Levels(VIH/VIL)
Output load condition
URL : www.hbe.co.kr
REV 2.0 (November.2002)
5
NOTE
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
INPUT/OUTPUT CAPACITANCE
(VDD = 2.5V, VDDQ = 2.5V, TA = 25°C, f = 1MHz)
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS, WE )
CIN1
49
57
pF
Input Capacitance(CKE0)
CIN2
42
50
pF
Input Capacitance( CS0)
CIN3
42
50
pF
Input Capacitance( CLK0, CLK1,CLK2 )
CIN4
22
25
pF
COUT1
6
8
pF
CIN5
6
8
pF
Data & DQS input/output Capacitance(DQ0~DQ63)
Input Capacitance(DM0~DM8)
AC TIMMING PARAMETERS & SPECIFICATIONS (THESEACCHARICTERISTICSWERETESTEDON THECOMPONENT)
PARAMETER
DDR200
DDR266A
DDR266B
-10A
-13A
-13B
SYMBOL
MIN
MAX
MIN
MAX
MIN
UNIT
NOTE
MAX
Row cycle time
tRC
70
65
65
ns
1
Refresh row cycle time
tRFC
80
75
75
ns
1,2
Row active time
tRAS
48
ns
1,2
/RAS to /CAS delay
tRCD
20
20
20
ns
3
Row precharge time
tRP
20
20
20
ns
3
Row active to Row active delay
tRRD
15
15
15
ns
3
Write recovery time
tWR
2
2
2
tCK
3
Last data in to Read command
tCDLR
1
1
1
tCK
2
Col. address to Col. address delay
tCCD
1
1
1
tCK
CL=2.0
Clock cycle time
10
120K
45
120K
45
120K
12
7.5
12
10
12
ns
12
7.5
12
7.5
12
ns
tCK
CL=2.5
URL : www.hbe.co.kr
REV 2.0 (November.2002)
6
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tDQSCK
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
+0.6
-
+0.5
-
+0.5
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Data out high impedence time from CK-/CK
tHZQ
-0.8
+0.8
-0.75
+0.75
-0.75
+0.75
ns
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
DQS-in hold time
tWPREH
0.25
0.25
0.25
tCK
DQS-in falling edge to CK rising-setup time
tDSS
0.2
0.2
0.2
tCK
DQS-in falling edge to CK rising hold time
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tCK
DQS-in cycle time
tDSC
0.9
Address and Control Input setup time
tIS
1.1
0.9
0.9
ns
Address and Control Input hold time
tIH
1.1
0.9
0.9
ns
Mode register set cycle time
tMRD
16
15
15
ns
DQ & DM setup time to DQS
tDS
0.6
0.5
0.5
ns
DQ & DM hold time to DQS
tDH
0.6
0.5
0.5
ns
DQ & DM input pulse width
tDIPW
2
1.75
1.75
ns
Power down exit time
tPDEX
10
10
10
ns
Exit self refresh to write command
tXSW
116
95
Exit self refresh to bank active command
tXSA
80
75
75
ns
Exit self refresh to read command
tXSR
200
200
200
Cycle
Refresh interval time
tREF
15.6
15.6
15.6
us
Output DQS valid window
tQH
0.35
0.35
0.35
tCK
DQS write postamble time
tWPST
0.25
0.25
0.25
tCK
DQS-out access time from CK/CK
1.1
0.9
1.1
0.9
1.1
ns
Notes :
URL : www.hbe.co.kr
REV 2.0 (November.2002)
Δ tIH
(ps)
0
+50
+100
7
3
tCK
1. Maximum burst refresh cycle : 8
2. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on tDQSS.
3. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter,
but system performance (bus turnaround) will degrade accordingly.
4. A write command can be applied with tRCD satisfied after this command.
5. For registered DIMMs, tCL and tCH are ≥ 45% of the period including both the half period jitter (tJIT(HP) ) of the PLL and the half jitter due to
crosstalk (tJIT(crosstalk) ) on the DIMM.
6. Input Setup/Hold Slew Rate Derating
Input Setup/Hold Slew Rate
Δ tIS
(V/ns)
(ps)
0.5
0
0.4
+50
0.3
+100
2
HANBit Electronics Co.,Ltd.
1
4
HANBit
HDD16M64D8W
This derating table is used to increase tDS/tDH in the case where the input slew rate is below 0.5V/ns. Input setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
7. I/O Setup/Hold Slew Rate Derating
Input Setup/Hold Slew Rate
Δ tIS
(V/ns)
(ps)
0.5
0
0.4
+75
0.3
+150
Δ tIH
(ps)
0
+75
+150
This derating table is used to increase tDS/tDH in the case where the I/O slew rate is below 0.5V/ns. I/O setup/hold slew rate
based on the lesser of AC-AC slew rate and DC-DC slew rate.
8. I/O Setup/Hold Plateau Derating
I/O Input Level
Δ tDS
(mV)
(ps)
+50
± 280
Δ tDH
(ps)
+50
This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF ± 310mV for a duration of up to 2ns.
9. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
Delta Rise/Fall Rate
Δ tDS
(ns/V)
(ps)
0
0
±0.25
+50
±0.5
+100
Δ tDH
(ps)
0
+50
+100
This derating table is used to increase tDS/tDH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
is calated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 5V/ns and slew rate 2 =.4V/ns then the Delta Rise/Fall
Rate =-0/5ns/V. Input S/H slew rate based on larger of AC-AC delta rise/fall rate and DC-DC delta rise/fall rate.
10. This parameter is fir system simulation purpose. It is guranteed by design.
11. For each of the terms, if not already an integer, round to the next highest integer. tCK is actual to the system clock cycle time.
COMMAND TRUTH TABLE (V=VALID, X=DOν¢T CARE, H=LOGIC HIGH, L=LOGIC LOW)
COMMAND
CKE
n-1
CKE
n
/CS
/RAS
/CAS
/WE
DM
X
L
L
L
L
X
OP code
1,2
X
L
L
L
L
X
OP code
1,2
L
L
L
H
X
X
X
X
Register
Extended MRS
H
Register
Mode register set
H
Auto refresh
Refresh
Self
refresh
Entry
Exit
Bank active & Row Addr.
Read &
column
address
Write &
column
address
Auto
precharge
Auto
H
H
X
L
H
H
H
H
X
X
X
L
L
H
H
H
X
L
H
L
precharge
disable
Auto
X
V
H
X
precharge
X
L
H
L
H
H
L
X
H
X
L
L
H
L
X
Entry
H
L
H
X
X
X
active power down
L
V
V
V
Exit
L
H
X
X
X
X
Precharge power
Entry
H
L
URL : www.hbe.co.kr
REV 2.0 (November.2002)
H
X
X
X
L
H
H
H
8
X
3
3
3
3
L
Column
H
(A0 ~ A9)
4
4
Column
4
Address
Address
(A0 ~ A9)
H
L
NOTE
Row address
V
L
X
All banks
A11
A9~A0
L
X
H
Bank selection
A10/
AP
V
H
H
enable
Clock suspend or
down mode
L
eable
Burst Stop
Precharge
L
precharge
disable
Auto
H
H
BA
0,1
4,6
X
V
L
X
H
7
X
X
X
X
X
HANBit Electronics Co.,Ltd.
5
HANBit
HDD16M64D8W
Exit
DM
No operation command
L
H
H
X
X
X
L
V
V
V
H
X
X
X
L
H
H
H
H
H
X
X
X
V
X
X
X
8
9
9
Note :
1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
PACKAGE DIMENSIONS
Unit : mm
32.741 ±
0.20
Front – Side
URL : www.hbe.co.kr
REV 2.0 (November.2002)
9
HANBit Electronics Co.,Ltd.
HANBit
HDD16M64D8W
32.741 ±
0.20
Rear-Side
ORDERING INFORMATION
Part Number
Density
Org.
Package
Ref.
Vcc
MODE
MAX.frq
HDD16M64D8W-10A
128MByte
16M x 64
184PIN DIMM
4K
2.5V
DDR
100MHz/CL2
HDD16M64D8W -13A
128MByte
16M x 64
184PIN DIMM
4K
2.5V
DDR
133MHz/CL2
HDD16M64D8W -13B
128MByte
16M x 64
184PIN DIMM
4K
2.5V
DDR
133MHz/CL2.5
URL : www.hbe.co.kr
REV 2.0 (November.2002)
10
HANBit Electronics Co.,Ltd.
Similar pages