JIEJIE MICROELECTRONICS CO.,Ltd JME070-12/16/18/20 Description: 1) Chip: double mesa SCRs of reverse blocking high-voltage 2) Chip area: 9.8mm×9.8mm (edge gate thyristor) 3) Technology: mesa glass passivation technology, multilayer metallization technology and non-void welding by vacuum welding technology Typical Application: Reactive power compensation, solid state relay, power module, etc. Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TC=25℃) Parameter Test Conditions Operating junction temperature range Symbol Values Unit Tj -40-125 ℃ Repetitive peak off-state voltage Tj=25℃ VDRM 1200/1600/1800/2000 V Repetitive peak reverse voltage Tj=25℃ VRRM 1200/1600/1800/2000 V Average on-state current TC=80℃ IT(AV) 70 A Peak on-state surge current tp=10ms ITSM 1500 A I2t value for fusing tp=10ms I2t 11250 A2s dI/dt 150 A/μs VD=2/3VDRM IG=0.3A Critical rate of rise of on-state current tp=200μs Tj=125℃ dIG/dt=0.3A/μs Electrical Characteristics (Packaged into modules, unless otherwise specified, TC=25℃) Parameter Peak on-state voltage Test Conditions Symbol Values Unit VTM ≤1.8 V TC=25℃ IDRM1 ≤50 μA TC=125℃ IDRM2 ≤10 mA TC=25℃ IRRM1 ≤50 μA TC=125℃ IRRM2 ≤10 mA IT=210A tp=380μs VD=VDRM Repetitive peak off-state current VR=VRRM Repetitive peak reverse current Triggering gate current VD=12V RL=30Ω IGT 10-80 mA Latching current IG=1.2 IGT IL ≤200 mA Holding current I T=1A IH ≤150 mA Triggering gate voltage VD=12V RL=30Ω VGT ≤2 V TEL：+86-513-83639777 - 1 / 3- http://www.jjwdz.com JIEJIE MICROELECTRONICS CO.,Ltd Non triggering gate voltage Critical rate of rise of voltage VD=VDRM Tj=125℃ VD=2/3VDRM Tj=125℃ Gate Open VGD ≥0.25 V dV/dt ≥1000 V/μs Mechanical Characteristics Module size 11 mm×11 mm Module thickness 1.6 mm Welding area of cathode electrode 8.1 mm×8.1 mm Welding area of control electrode 2.3 mm×1 mm A K G symbol Working Conditions 1) No severe mechanical shock as impact and drop off in the process of transportation, storage and working of product. 2) Storage conditions Temperature: 5~40℃ Relative humidity: ≤45% Storage time: 3 days for the open package; 3 months for the closed package 3) Welding conditions Recommended solder component: Sn63Sb37 (or lead-free solder of liquid quadrant less than 240℃) Recommended soldering conditions: shown in Table 1 4) Welding in the gate spot is recommended to be completed one-time by using fixture. If it is necessary to use a soldering iron, the temperature of soldering iron is controlled within 280℃ and time is controlled within 20s. TEL：+86-513-83639777 - 2 / 3- http://www.jjwdz.com JIEJIE MICROELECTRONICS CO.,Ltd Table 1 Sn63Sb37 Soldering conditions Average heating rate 3℃/s (Max) Low limit of temperature Preheating activation Reflow zone TS(Min) 100℃ Upper limit of temperature TS(Max) 150℃ Time (min ~ max) 60 ~ 90s tS Melting point temperature TL 183℃ (Sn63Sb37) Peak temperature TP 240℃ (+0/-5℃) Reflow time tp 10～30s (Peak temperature ±5℃) Melting time TL 40～60s Maximum cooling rate 3.5℃/s Recommended process time 300 ~ 360s 250℃ 100℃ t t TL 200℃ 150℃ Sn63Pb37 Tp P (10-30S) Ts(max) L (40-60S) Ts(min) ts 60-90S Ordering Information J M E 070 JieJie Microelectronics Co.,Ltd Module of series E:Edge and corner gate TEL：+86-513-83639777 - 3 / 3- -16 12:VDRM/VRRM≥1200V 16:VDRM/VRRM≥1600V 18:VDRM/VRRM≥1800V 20:VDRM/VRRM≥2000V IT(AV)=70A http://www.jjwdz.com