Siemens BA592 Silicon rf switching diode Datasheet

BA 592
Silicon RF Switching Diode
BA 592
Preliminary Data
●
For VHF band switching
in TV/VTR tuners
●
Low forward resistance,
small capacitance,
small inductance
Type
Marking
Ordering Code
(tape and reel)
BA 592
blue S
Q62702-A950
Pin Configuration
Package
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
35
V
Forward current
IF
100
mA
Operating temperature range
Top
– 55 … + 125 ˚C
Storage temperature range
Tstg
– 55 … + 150
Rth JA
≤
Thermal Resistance
Junction - ambient
Semiconductor Group
1
450
K/W
10.94
BA 592
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Forward voltage
IF = 100 mA
VF
–
–
1
V
Reverse current
VR = 20 V
IR
–
–
20
nA
Diode capacitance
f = 1 MHz
VR = 1 V
VR = 3 V
CT
Forward resistance
f = 100 MHz
IF = 3 mA
IF = 10 mA
rf
Reverse resistance
VR = 1 V, f = 100 MHz
Series inductance
pF
–
0.6
1.4
1.1
Ω
–
–
0.45
0.36
0.7
0.5
1/gp
–
100
–
KΩ
LS
–
2
–
nH
Diode capacitance CT = f (VR)
f = 1 MHz
Semiconductor Group
0.92
0.85
Forward resistance rf = f (IF)
f = 100 MHz
2
Similar pages