APTM20UM04S-AlN Single switch Series & parallel diodes MOSFET Power Module CR1 D S Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance G D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 417 310 1670 ±30 4 1560 100 50 3000 Unit V A V mΩ W A July, 2004 Q1 S Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20UM04S– -AlN Rev 0 SK VDSS = 200V RDSon = 4mΩ max @ Tj = 25°C ID = 417A @ Tc = 25°C APTM20UM04S-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 500µA Min 200 Tj = 25°C VGS = 0V,VDS = 160V Tj = 125°C VGS = 10V, ID = 208.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V VGS = 0V,VDS = 200V Test Conditions VGS = 0V VDS = 25V f = 1MHz 3 Min VGS = 10V VBus = 100V ID = 417A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 28.8 9.32 0.58 560 Max Unit V 500 2000 4 5 ±200 mΩ V nA Max Unit µA nF nC 212 268 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 417A R G = 1.2Ω Rise Time Typ 64 ns 88 116 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2Ω 3396 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 417A, R G = 1.2Ω 3744 µJ 3716 µJ 3944 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 360A IF = 720A IF = 360A IF = 360A VR = 133V di/dt = 1000A/µs IF = 360A VR = 133V di/dt = 1000A/µs Min Tj = 125°C Typ 360 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 360 Tj = 125°C 1500 T c = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V July, 2004 Symbol Characteristic IF(A V) Maximum Average Forward Current ns nC 2–6 APTM20UM04S– -AlN Rev 0 Series diode ratings and characteristics APTM20UM04S-AlN Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 360A IF = 720A IF = 360A IF = 360A VR = 133V di/dt = 1000A/µs IF = 360A VR = 133V di/dt = 1000A/µs Min Tj = 125°C Typ 360 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 360 Tj = 125°C 1500 T c = 85°C Thermal and package characteristics Symbol Characteristic Min Transistor Series Diode Parallel Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max Unit A 1.15 V ns nC Max 0.08 0.12 0.12 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM20UM04S– -AlN Rev 0 July, 2004 Package outline APTM20UM04S-AlN Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.09 0.08 0.9 0.07 0.7 0.06 0.05 0.5 0.04 0.03 0.3 0.02 Single Pulse 0.1 0.01 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 1200 10V 1000 9V 800 8.5V 600 8V 7.5V 400 7V 200 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 1000 800 600 400 TJ=25°C 200 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 208.5A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 450 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 400 350 300 250 200 150 100 50 0 0 100 200 300 400 ID, Drain Current (A) 500 600 25 50 75 100 125 150 July, 2004 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM20UM04S– -AlN Rev 0 ID, Drain Current (A) Transfert Characteristics 1200 ID, Drain Current (A) 1400 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 208.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 1000 limited by RDSon 100µs 100 10 1ms 10ms 100ms Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=417A V DS=40V 12 TJ =25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) July, 2004 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM20UM04S– -AlN Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20UM04S-AlN APTM20UM04S-AlN Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=1.2Ω T J=125°C L=100µH 60 40 t r and tf (ns) t d(on) and td(off) (ns) td(off) 80 t d(on) 120 100 80 tr 60 20 0 0 0 100 200 300 400 500 600 700 I D, Drain Current (A) 0 Eoff Eon 2 Switching Energy (mJ) VDS=133V RG=1.2Ω TJ=125°C L=100µH 4 0 V DS=133V ID=417A T J=125°C L=100µH 12 10 Eoff 8 6 Eon 4 100 200 300 400 500 600 700 0 I D, Drain Current (A) Operating Frequency vs Drain Current 250 ZCS V DS=133V D=50% RG=1.2Ω T J=125°C T C=75°C ZVS Hard switching 0 50 100 150 200 250 300 350 400 7.5 10 12.5 15 1000 TJ=150°C 100 TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20UM04S– -AlN Rev 0 July, 2004 I D, Drain Current (A) 5 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 200 2.5 Gate Resistance (Ohms) 350 50 600 2 0 100 200 300 400 500 ID, Drain Current (A) 14 6 150 100 Switching Energy vs Gate Resistance Switching Energy vs Current 8 Eon and Eoff (mJ) tf 40 20 Frequency (kHz) V DS=133V R G=1.2Ω T J=125°C L=100µH 140 100