AP4539GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Lower Gate Charge RDS(ON) D1 D1 ▼ Fast Switching Performance 20V 11.5mΩ ID ▼ RoHS Compliant & Halogen-Free SO-8 S1 10.4A P-CH BVDSS G2 S2 G1 Description AP4539 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. -20V RDS(ON) 23mΩ ID -7.5A D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Total Power Dissipation TSTG TJ -20 V +12 V 10.4 -7.5 A 3 8.3 -6 A 30 -30 A 1 PD@TA=25℃ 20 +16 Continuous Drain Current Pulsed Drain Current P-channel 3 Continuous Drain Current IDM Units 2 W Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 201209121 AP4539GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 20 - - V VGS=10V, ID=9A - 9.1 11.5 mΩ VGS=4.5V, ID=5A - 10.2 13.5 mΩ 0.3 0.75 1.2 V VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=9A - 33 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +100 nA Qg Total Gate Charge ID=9A - 16 25.6 nC Qgs Gate-Source Charge VDS=10V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.5 - nC td(on) Turn-on Delay Time VDS=10V - 6 - ns tr Rise Time ID=1A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω - 31 - ns tf Fall Time VGS=10V - 19 - ns Ciss Input Capacitance VGS=0V - 1350 2160 pF Coss Output Capacitance VDS=10V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.3 4.6 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=9A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC 2 AP4539GM-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-7A - 18.3 23 mΩ VGS=-2.5V, ID=-4A - 22.9 30 mΩ -0.3 -0.6 -1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-7A - 30 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-7A - 28 44.8 nC Qgs Gate-Source Charge VDS=-10V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC td(on) Turn-on Delay Time VDS=-10V - 9 - ns tr Rise Time ID=-1A - 26 - ns td(off) Turn-off Delay Time RG=3.3Ω - 100 - ns tf Fall Time VGS=-5V - 56 - ns Ciss Input Capacitance VGS=0V - 2450 3920 pF Coss Output Capacitance VDS=-10V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF Rg Gate Resistance f=1.0MHz - 4 8 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-7A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 31 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4539GM-HF N-Channel 40 40 ID , Drain Current (A) 30 20 10 30 20 10 0 0 0 1 2 3 0 4 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 1.8 I D =9A V G =10V I D = 5A o Normalized RDS(ON) T A = 25 C 11 RDS(ON0 (mΩ) 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V o T A =25 C 10 1.4 1.0 9 30 8 -30 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 10 I D =250uA 8 T j =25 o C o T j =150 C IS(A) Normalized VGS(th) 1.6 6 4 2 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4539GM-HF N-Channel f=1.0MHz 2000 ID=9A V DS = 10 V 1600 6 C iss C (pF) VGS , Gate to Source Voltage (V) 8 4 1200 800 2 400 C oss C rss 0 0 0 10 20 1 30 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthja) Duty factor=0.5 Operation in this area limited by RDS(ON) 100us ID (A) 1ms 10ms 100ms 1 1s 0.1 DC o T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse 30 Duty factor = t/T Peak Tj = PDM x Rthja + T a -30 Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 16 30 ID , Drain Current (A) ID , Drain Current (A) V DS =5V 20 T j =150 o C 12 8 4 10 o T j =25 C o T j =-40 C 0 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 4 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 5 AP4539GM-HF P-Channel 40 40 -5.0V -4.5V -3.5V -2.5V V G = - 2.0V -ID , Drain Current (A) 30 20 10 30 20 10 0 0 0 1 2 3 4 0 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 30 I D = -7 A V G = -4.5V I D = -4 A T A =25 o C 1.6 Normalized RDS(ON) 26 RDS(ON) (mΩ) -5.0V -4.5V -3.5V -2.5V V G = - 2.0V o T A = 150 C -ID , Drain Current (A) o T A =25 C 22 1.2 0.8 18 30 -30 0.4 14 0 2 4 6 -50 8 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 I D = -250uA 1.6 Normalized -VGS(th) -IS(A) 6 4 T j =150 o C T j =25 o C 1.2 0.8 2 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4539GM-HF P-Channel f=1.0MHz 6 3200 I D = -7A V DS = -10V C iss 2400 4 C (pF) -VGS , Gate to Source Voltage (V) 5 3 1600 2 800 1 C oss C rss 0 0 0 10 20 30 40 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us Operation in this area limited by RDS(ON) 10 Normalized Thermal Response (Rthja) Duty factor=0.5 -ID (A) 1ms 10ms 1 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.01 0.2 0.1 0.1 0.0 5 0.02 0.01 PDM 0.01 t T Single Pulse 30 Duty factor = t/T Peak Tj = PDM x Rthja + T a -30 Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 10 V DS = -5V -ID , Drain Current (A) -ID , Drain Current (A) 8 30 20 6 4 T j =150 o C 10 2 T j =25 o C T j = -40 o C 0 0 0 1 2 3 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 4 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 7