ECH8601M Ordering number : ENA1174 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8601M General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit 24 V ±12 V 8 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (1000mm2✕0.8mm) 1unit 1.5 W Total Dissipation When mounted on ceramic substrate (1000mm2✕0.8mm) Channel Temperature PT Tch Storage Temperature Tstg 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : TL Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V Ratings min typ Unit max 24 V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4A 3.1 1 μA ±10 μA 1.3 5.3 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72308PE TI IM TC-00001533 No. A1174-1/4 ECH8601M Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance Turn-ON Delay Time Turn-OFF Delay Time 17 23 mΩ 14 18 24 mΩ RDS(on)3 RDS(on)4 ID=4A, VGS=3.1V ID=2A, VGS=2.5V 14.5 20 30 mΩ 16 24 35 mΩ See specified Test Circuit. 300 ns See specified Test Circuit. 1000 ns See specified Test Circuit. 3000 ns See specified Test Circuit. 1800 ns 7.5 nC 1.5 nC 0.8 Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=8A VDS=10V, VGS=4.5V, ID=8A VDS=10V, VGS=4.5V, ID=8A Diode Forward Voltage VSD IS=8A, VGS=0V Package Dimensions 2.0 8 7 6 5 1 2 3 4 Top View 2.9 0.25 nC 1.2 V Electrical Connection unit : mm (typ) 7011A-003 0.15 5 2.3 0 to 0.02 2.8 Unit max 13.5 Total Gate Charge 8 typ ID=4A, VGS=4.5V ID=4A, VGS=4.0V td(off) tf Fall Time min RDS(on)1 RDS(on)2 td(on) tr Rise Time Ratings Conditions 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 4 1 0.65 0.3 0.9 0.25 Top view 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10μs D.C.≤1% Rg G ECH8601M P.G 50Ω S Rg=1kΩ No. A1174-2/4 ECH8601M 5V VDS=10V 8 7 5 4 VGS=1.5V 3 1 1 0 0 0.4 0 0.5 Drain-to-Source Voltage, VDS -- V ID=2A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4A 30 25 20 15 10 5 0 2 4 6 8 Ta= °C --25 C 75° 3 C 25° 2 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 IT13575 5 VDD=10V VGS=4.5V td(off) 3 tf 2 1000 tr 7 5 td(on) 3 A =4.0 V, I D 15 =4.0 VGS 10 --40 --20 2 0 20 40 60 80 100 120 140 160 IT13856 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V SW Time -- ID 7 20 0.01 7 5 3 2 0.001 0.1 1.0 IT13576 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V 1.0 0.1 25 10 7 5 3 2 Source Current, IS -- A 7 5 .0A =2 I D , A 4.0 .5V =2 I D= , S 0A V G V =4. 3.1 I D = , 5V V GS =4. V GS 30 Ambient Temperature, Ta -- °C VDS=10V 10 2.5 IT13573 35 IT13574 ⏐yfs⏐ -- ID 2 2.0 40 5 --60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 45 Ta=25°C 35 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 40 0.5 IT13805 °C --25 °C 0.3 25 0.2 5°C 0.1 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 2 2 Forward Transfer Admittance, ⏐yfs⏐ -- S 5 25°C 3 6 --25°C 6 °C 7 Ta=7 5 Drain Current, ID -- A Drain Current, ID -- A 8 Switching Time, SW Time -- ns ID -- VGS 9 2. 4.0 V 4.5 V 10.0 9 V 3.1 V ID -- VDS 10 VDS=10V ID=8A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.1 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13857 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 IT13858 No. A1174-3/4 ECH8601M ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s 1m s ms ID=8A 10 10 0m s DC op era tio Operation in this n area is limited by RDS(on). 0.1 7 Ta=25°C 5 Single pulse 3 on ceramic substrate 2 When mounted (1000mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 When mounted on ceramic substrate (1000mm2✕0.8mm) 1.6 1.5 1.4 1.2 1.0 To t 0.8 1u al Di ss ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13721 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT13722 Note on usage : Since the ECH8601M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1174-4/4