FDD5690 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Low gate charge (23nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. Fast switching speed. High performance trench technology for extremely low RDS(ON). 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D G G S TO-252 Absolute Maximum Ratings Symbol S o T C =25 C unless otherwise noted Parameter Ratings Units V DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage V ID Maximum Drain Current (Note 1) ±20 30 (Note 1a) 9 Maximum Drain Current -Continuous -Pulsed 100 Maximum Power Dissipation @ T C = 25 o C PD T J, T stg A (Note 1) 50 T A = 25 o C (Note 1a) 3.2 T A = 25 o C (Note 1b) Operating and Storage Junction Temperature Range W 1.3 -55 to +150 °C Thermal Characteristics R θJC Thermal Resistance, Junction-to- Case (Note 1) 2.5 °C/W R θJA Thermal Resistance, Junction-to- Ambient (Note 1a) 40 °C/W (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5690 FDD5690 13’’ 16mm 2500 2002 Fairchild Semiconductor Corporation FDD5690, Rev. C FDD5690 December 2002 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics W DSS IAR Single Pulse Drain-Source VDD = 30 V, ID = 30 A Avalanche Energy Maximum Drain-Source Avalanche Current BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20V, VDS = 0 V 100 µA nA VGS = -20 V, VDS = 0 V -100 nA IGSSR On Characteristics 90 30 60 mJ A V 57 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C -6 Static Drain-Source On-Resistance 0.023 0.032 0.026 ID(on) On-State Drain Current VGS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A, TJ = 125°C VGS = 6 V, ID = 8 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 9 A 2 2.5 4 V mV/°C 0.027 0.048 0.032 25 Ω A 24 S 1110 pF Dynamic Characteristics VDS = 25 V, VGS = 0 V f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics 150 pF 75 pF (Note 2) td(on) Turn-On Delay Time VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time 10 18 ns Qg Total Gate Charge 23 32 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 9 A VGS = 10 V, 10 18 ns 9 18 ns 24 39 ns 4 nC 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.75 2.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96oC/W on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDD5690, Rev. C FDD5690 Electrical Characteristics FDD5690 Typical Characteristics 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 60 VGS = 10V 6.0V 50 5.0V 40 30 4.5V 20 4.0V 10 0 1.8 1.6 VGS = 4.5V 1.4 5.0V 1.2 1 0.8 0 1 2 3 4 5 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 2 ID = 15A ID = 9A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.06 o TA = 125 C 0.04 o 0.02 TA = 25 C 0 -50 -25 0 25 50 75 100 125 150 3 4 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 o VDS = 5V VGS = 0V TA = -55 C o 25 C 50 10 o o 125 C TA = 125 C 40 1 30 0.1 20 0.01 10 0.001 o 25 C o -55 C 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD5690, Rev. C FDD5690 Typical Characteristics (continued) 2500 VGS, GATE-SOURCE VOLTAGE (V) 10 ID = 9A VDS = 10V f = 1MHz VGS = 0 V 20V 8 2000 CISS 30V 6 1500 4 1000 2 500 0 0 0 5 10 15 20 COSS CRSS 0 25 10 Qg, GATE CHARGE (nC) 30 40 SINGLE PULSE o RθJA = 96 C/W 10ms o 100ms TA = 25 C POWER (W) 1S 10S DC 40 20 VGS = 10V SINGLE PULSE 0.1 o RθJA = 96 C/W o TA = 25 C 0 0.01 0.1 1 10 0.01 100 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 1ms 1 60 60 100µs RDS(ON) LIMIT 10 50 Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 100 20 VDS, DRAIN TO SOURCE VOLTAGE (V) D = 0.5 0.2 0.1 R θJA (t) = r(t) * R θJA R θJA = 96°C/W 0.1 0.05 0.01 0.01 0.02 P(pk) Single Pulse t1 0.001 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.0001 0.0001 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDD5690, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1