Diodes DMN5L06DWK Dual n-channel enhancement mode mosfet Datasheet

DMN5L06DWK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET











Mechanical Data


Dual N-Channel MOSFET
Low On-Resistance (1.0V Max)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)




SOT363
ESD PROTECTED TO 2kV
D2
G1
S1
S2
G2
D1
Top View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMN5L06DWK-7
Notes:
Case
SOT363
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
DAB YM
DAB YM
NEW PRODUCT
Features
Date Code Key
Year
Code
Month
Code
2006
T
2007
U
2008
V
…
…
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
2018
F
2019
G
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
1 of 6
www.diodes.com
March 2017
© Diodes Incorporated
DMN5L06DWK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
NEW PRODUCT
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current
Symbol
VDSS
VGSS
Continuous
Pulsed (Note 6)
Value
50
20
305
800
Unit
V
V
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
ID
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RθJA
TJ, TSTG
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = +25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
5.
6.
7.
8.
Min
Typ
Max
Unit
BVDSS
IDSS
50




60
V
nA
IGSS


1
500
50
µA
nA
nA
VGS(TH)




1.4


1.0
V
3.0
2.5
2.0
Ω
ID(ON)
|YFS|
VSD
0.49



0.5
200
0.5


1.4
A
mS
V
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF














65
0.4
0.1
0.1
2.1
1.8
14.4
8.4
50
25
5.0








pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
RDS(ON)
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Test Condition
VGS = 0V, ID = 10µA
VDS = 50V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 25V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V VDS = 10V,
ID = 0.25A
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 0.2A
Device mounted on FR-4 PCB.
Pulse width 10µS, Duty Cycle 1%.
Short duration pulse test used to minimize self-heating effect.
Guaranteed by design. Not subject to product testing.
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
2 of 6
www.diodes.com
March 2017
© Diodes Incorporated
NEW PRODUCT
DMN5L06DWK
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
10
0
-50
75 100 125 150
-25
25
50
0
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
1
0
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
10
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
3 of 6
www.diodes.com
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
March 2017
© Diodes Incorporated
IDR, REVERSE DRAIN CURRENT (A)
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
IDR, REVERSE DRAIN CURRENT (A)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
250
PD, POWER DISSIPATION (mW)
NEW PRODUCT
DMN5L06DWK
200
150
100
50
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 Derating Curve - Total
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
150
4 of 6
www.diodes.com
March 2017
© Diodes Incorporated
DMN5L06DWK
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
NEW PRODUCT
SOT363
E
E1
F
SOT363
Dim Min Max
Typ
A1 0.00 0.10
0.05
A2 0.90 1.00
1.00
b
0.10 0.30
0.25
c
0.10 0.22
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1 1.15 1.35
1.30
e
0.650 BSC
F
0.40 0.45 0.425
L
0.25 0.40
0.30
a
0°
8°
-All Dimensions in mm
b
D
A2
c
L
e
A1
a
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
C
Dimensions
G
Y1
Y
C
G
X
Y
Y1
Value
(in mm)
0.650
1.300
0.420
0.600
2.500
X
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
5 of 6
www.diodes.com
March 2017
© Diodes Incorporated
DMN5L06DWK
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMN5L06DWK
Document number: DS30930 Rev. 7 - 2
6 of 6
www.diodes.com
March 2017
© Diodes Incorporated
Similar pages