PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 x 7.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 61,141 PRINCIPAL DEVICE TYPES CMPZ5221B THRU CMPZ5234B BACKSIDE CATHODE R6 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPZ18 IZ, Reverse Current (µA) Typical Electrical Characteristics R6 (22-March 2010) w w w. c e n t r a l s e m i . c o m