MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZB-34N ● IC ................................................................... 800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-element in a Pack ● AISiC Baseplate ● Trench Gate IGBT : CSTBTTM ● Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 4 - M8 NUTS 57±0.25 4(E1) 2(C2) C2 20 E1 G1 G2 140 30 C1 E2 E2 C1 3(C1) E1 C2 16 40 6 - M4 NUTS CIRCUIT DIAGRAM E2 C1 G1 G2 18 6 - φ 7 MOUNTING HOLES 44 53 1(E2) 57 55.2 11.85 5 screwing depth min. 16.5 35 11.5 screwing depth min. 7.7 28 +20 38 +20 5 14 LABEL 31.5 CM 124±0.25 C2 E1 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. Ratings 1700 ± 20 800 1600 800 1600 5200 4000 –40 ~ +150 –40 ~ +125 –40 ~ +125 10 (Note 1) (Note 1) Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C Unit V V A A A A W V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Qg Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = 10 V, IC = 80 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 900 V, IC = 800 A, VGE = ±15 V, Tj = 25°C IC = 800 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C VCC = 900 V, IC = 800 A, VGE = ±15 V RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH Inductive load VCC = 900 V, IC = 800 A, VGE = ±15 V RG(off) = 3.9 Ω, Tj = 125°C, Ls = 150 nH Inductive load IE = 800 A VGE = 0 V (Note 4) VCC = 900 V, IE = 800 A, VGE = ±15 V RG(on) = 1.6 Ω, Tj = 125°C, Ls = 150 nH Inductive load Tj = 25°C Tj = 125°C Min — — 5.5 — — — — — — — — — Limits Typ — 2.5 6.5 — 132 7.2 2.1 9.1 2.10 2.35 — — Max 3 6 7.5 0.5 — — — — 2.70 — 1.50 0.60 — 0.30 — J/P — — — — 3.00 0.60 µs µs — 0.20 — J/P — — 2.20 1.85 3.00 — V — — 1.50 µs — 260 — µC — 0.18 — J/P Unit mA V µA nF nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 2 MITSUBISHI HVIGBT MODULES CM800DZB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Item Rth(j-c)Q Rth(j-c)R Thermal resistance: IGBT part Thermal resistance: FWDi part Rth(c-f) Contact thermal resistance Conditions Junction to Case, 1/2 module Junction to Case, 1/2 module Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm, 1/2 module Min — — Limits Typ — — Max 24.0 36.0 K/kW K/kW — 18.0 — K/kW Min 7.0 3.0 1.0 — 600 19.5 32.0 — — Limits Typ — — — 1.0 — — — 18 0.30 Max 13.0 6.0 2.0 — — — — — — Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = 25°C Unit N·m N·m N·m kg — mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 3 MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1600 1600 VCE = 20V Tj = 125°C 1400 VGE = 20V VGE = 10V 1200 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 1400 VGE = 15V 1000 VGE = 12V 800 600 VGE = 8V 400 1000 800 600 400 200 200 0 1200 0 1 2 3 4 5 0 6 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 1600 12 1600 1400 1400 1200 1200 EMITTER CURRENT (A) COLLECTOR CURRENT (A) VGE = 15V 1000 800 600 400 800 600 400 200 0 1000 200 Tj = 25°C Tj = 125°C 0 1 2 3 0 4 Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 4 MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCE = 900V, IC = 800A Tj = 25°C 7 5 15 CAPACITANCE (nF) 2 GATE-EMITTER VOLTAGE (V) 3 Cies 102 7 5 3 2 101 7 5 Coes 3 100 -1 10 2 3 5 7 100 0 -5 Cres 2 3 5 7 101 2 3 -15 5 7 102 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.2 14 1.4 VCC = 900V, VGE = ±15V RG (on) = 1.6Ω, RG (off) = 3.9Ω Tj = 125°C, Inductive load 1.0 VCC = 900V, IC = 800A VGE = ±15V, Tj = 125°C 1.2 Inductive load Eon SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P) 5 -10 VGE = 0V, Tj = 25°C f = 100kHz 2 10 0.8 0.6 Eoff 0.4 0.2 Erec 1.0 Eon 0.8 0.6 0.4 Eoff 0.2 Erec 0 0 400 800 1200 0 1600 0 5 10 15 20 GATE RESISTANCE (Ω) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 5 MITSUBISHI HVIGBT MODULES CM800DZB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 3 100 td(on) 7 5 tf 3 2 10-1 7 5 103 7 td(off) 2 SWITCHING TIMES (µs) 101 VCC = 900V, VGE = ±15V RG (on) = 1.6Ω, RG (off) = 3.9Ω Tj = 125°C, Inductive load REVERSE RECOVERY TIME (µs) 7 5 tr 3 7 lrr 5 4 4 3 3 2 2 100 trr 5 5 4 4 3 3 2 2 3 4 5 7 103 2 3 4 5 10-1 2 10 7 104 102 7 7 2 10-2 2 10 5 2 3 4 5 VCC = 900V, VGE = ±15V 2 RG (on) = 1.6Ω, Tj = 125°C Inductive load 101 7 103 2 3 4 5 7 104 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 HIGH POWER SWITCHING USE INSULATED TYPE EMITTER CURRENT (A) COLLECTOR CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 Rth(j–c)Q = 24.0K/kW Rth(j–c)R = 36.0K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 6 MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 15000 VCC ≤ 1200V, VGE = ±15V Tj = 125°C, RG (off) ≥ 3.9Ω 1500 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 2000 1000 500 0 0 500 1000 1500 10000 5000 0 2000 COLLECTOR-EMITTER VOLTAGE (V) VCC ≤ 1000V, VGE = ±15V RG (on) ≥ 1.6Ω, RG (off) ≥ 3.9Ω Tj = 125°C, tpsc ≤ 10µs 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CURRENT (A) 1000 VCC ≤ 1200V, di/dt ≤ 3500A/µs Tj = 125°C 800 600 400 200 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 7