Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features BCE ﹒Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ﹒With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.0 V IB Base collector current 6.0 A IC Collector current 10 A PC Collector power dissipation 90 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO PARAMETER Collector-base cut-off current Emitter-base cut-off current ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)ceo VEBO Collector-emitter breakdown voltage CONDITIONS VCB=80V; IE=0 VEB=5.0V; IC=0 IC=0.1A; IB=0 MIN TYPE MAX 1.0 2.0 80 UNIT mA mA V Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages IC=3A; IB=0.3A hFE-1 Forward current transfer ratio IC=2A; VCE=2V 30 hFE-2 Forward current transfer ratio IC=4A; VCE=2V 15 hFE-3 Forward current transfer ratio VBE(on)1 Base-emitter on voltages VBE(on)2 Base-emitter on voltages fT Transition frepuency Cob Output Capacitance IC=4A; VCE=2V VCE=10V ;IC=1A;f=1MHz 1.5 1.1 V 1.6 V MHz