JMNIC BD810 Silicon pnp transistor Datasheet

Power Transistors
www.jmnic.com
BD810
Silicon PNP Transistors
Features
BCE
﹒Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
﹒With TO-220 package
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
VCBO
Collector to base voltage
80
V
VCEO
Collector to emitter voltage
80
V
VEBO
Emitter to base voltage
5.0
V
IB
Base collector current
6.0
A
IC
Collector current
10
A
PC
Collector power dissipation
90
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TO-220
Electrical Characteristics Tc=25
SYMBOL
ICBO
IEBO
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
ICEO
Collector-emitter cut-off current
VCBO
Collector-base breakdown voltage
V(BR)ceo
VEBO
Collector-emitter breakdown voltage
CONDITIONS
VCB=80V; IE=0
VEB=5.0V; IC=0
IC=0.1A; IB=0
MIN
TYPE
MAX
1.0
2.0
80
UNIT
mA
mA
V
Emitter-base breakdown voltage
VCE(sat-1)
Collector-emitter saturation voltages
VCE(sat-2)
Collector-emitter saturation voltages
IC=3A; IB=0.3A
hFE-1
Forward current transfer ratio
IC=2A; VCE=2V
30
hFE-2
Forward current transfer ratio
IC=4A; VCE=2V
15
hFE-3
Forward current transfer ratio
VBE(on)1
Base-emitter on voltages
VBE(on)2
Base-emitter on voltages
fT
Transition frepuency
Cob
Output Capacitance
IC=4A; VCE=2V
VCE=10V ;IC=1A;f=1MHz
1.5
1.1
V
1.6
V
MHz
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