FR05 -12 - - - FR05 - 20 Diode Semiconductor Korea VOLTAGE RANGE: 1200 --- 2000 V CURRENT: 0.5 A FAST RECOVERY RECT IFIERS FEATURES Low cos t Diffus ed junction DO - 41 Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--41,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.012ounces ,0.34 gram s Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. FR05 -12 FR05 -14 FR05 -15 FR05 -16 FR05 -18 FR05 -20 UNITS Maxim um recurrent peak revers e voltage V R RM 1200 1400 1500 1600 1800 2000 V Maxim um RMS voltage V R MS 840 980 1050 1120 1260 1400 V Maxim um DC blocking voltage VDC 1200 1400 1500 1600 1800 2000 V Maxim um average forward rectified current 9.5m m lead length, @TA=75 IF(AV) 0.5 A IFSM 30.0 A VF 2.0 V Peak forward s urge current 10m s s ingle half-s ine-wave s uperim pos ed on rated load @TJ=125 Maxim um ins tantaneous forward voltage @ 0.5 A Maxim um revers e current at rated DC blocking voltage @TA=25 @TA=100 IR 5.0 A 100.0 Maxim um revers e recovery tim e (Note1) t rr 500 ns Typical junction capacitance (Note2) CJ 12 pF Typical thernal res is tance (Note3) Rθ JA 55 TJ -55 ---- + 150 TSTG -55 ---- + 150 Operating junction tem perature range Storage tem perature range /W N OTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Meas ured at 1.0MH Z and applied rev erse v oltage of 4.0V D C. 3. Thermal resistance f rom junction to am bient. www.diode.kr Diode Semiconductor Korea FR05 -12 - - - FR05 - 20 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 N.1. 50 N.1. trr +0.5A D.U.T. ( - ) (+) 50VDC (APPROX) (-) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O 0.6 FIG.3 --PEAK FORWARD SURGE CURRENT Single Phase Half Wave 60HZ Resistive or Inductive Load 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 50 40 30 TJ =25 8.3ms Single Half Sine-Wave 20 10 0 1 100 10 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz FIG.5-- TYPICAL JUNCTION CAPACITANCE FIG.4--TYPICAL FORWARD CHARACTERISTIC 0.75 TJ=25 Pulse Width=300µS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT AMPERES 1cm SET TIMEBASEFOR50/100 ns /cm 0.5 0.25 0 0.6 1 2 200 100 60 40 20 10 6 4 2 TJ-25 1 0.1 0.2 0.4 1 2 4 10 20 40 100 3 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.diode.kr