Holtek HT68F03T3 8-bit flash mcu with rf transmitter Datasheet

HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Features
MCU Features
·
MCU operating voltage with RF Transmitter:
fSYS= 8MHz: 2.2V~3.6V
fSYS= 12MHz: 2.7V~3.6V
·
Up to 0.33ms instruction cycle with 12MHz system clock
·
Power Down and Wake-up functions to reduce power consumption
·
Five oscillators:
- External High Speed Xtal
- External 32.768kHz Xtal
- External RC
- Internal High Speed - no external components
- Internal 32kHz - no external components
·
Multi-mode operation: NORMAL, SLOW, IDLE and SLEEP
·
Fully integrated internal 4MHz, 8MHz and 12MHz Oscillator
·
All instructions executed in one or two instruction cycles
·
Table read instructions
·
63 powerful instructions
·
Up to 4 subroutine nesting levels
·
Bit manipulation instruction
·
Flash Program Memory: 1K´14
·
RAM Data Memory: 64´8
·
EEPROM Memory: 64´8
·
Watchdog Timer function
·
Up to 8 bidirectional I/O lines
·
External interrupt pin shared with I/O pin
·
Multiple Timer Modules for time measure, input capture, compare match output, PWM output or
single pulse output functions
·
Comparator function
·
Dual Time-Base functions for generation of fixed time interrupt signal
·
Low voltage reset function
·
Low voltage detect function
·
Multi-channel 12-bit resolution A/D converter
·
Package type: 16-pin NSOP
RF Transmitter Features
Rev. 1.30
·
Complete UHF ASK/OOK transmitter
·
Frequency range 300MHz to 450MHz
·
Data rates more than 10k bps
·
Output Power up to 10dBm
·
Low voltage operation - down to 2.2V
·
Data tracking function for power saving
·
Reference clock output for MCU IRC clock synchronisation
1
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
General Description
These devices provide a combination of a fully featured MCU plus an RF transmitter function, giving
them great flexibility for use in wide range of wireless I/O control applications such as industrial
control, consumer products, subsystem controllers, etc.
Analog features include a multi-channel 12-bit A/D converter. Multiple and extremely flexible
Timer/Event Counters provide full timing functions. Protective features such as an internal Watchdog
Timer and Low Voltage Reset coupled with excellent noise immunity and ESD protection ensure that
reliable operation is maintained in hostile electrical environments. An extensive choice of oscillator
functions are provided including a fully integrated system oscillator which requires no external
components for its implementation. The ability to operate and switch dynamically between a range of
operating modes using different clock sources gives users the ability to optimise microcontroller
operation and minimise power consumption. The devices also include flexible I/O programming
features Time-Base functions and a range of other features.
The RF transmitter is a high performance and easy to use transmitter operating in the 300MHz to
450MHz frequency band. One only needs to add a crystal reference frequency, and a limited number of
external components to create a complete and versatile RF transmitter system. The device is capable of
delivering more than +9 dBm into a 50W load. Such a power level enables a small form factor
transmitter to operate near the maximum limit of the transmission regulations. The device can operate
with ASK - Amplitude Shift Keying, and OOK - On-Off Keying, UHF receiver types from wide-band
super-regenerative radios to narrow-band, high performance super-heterodyne receivers. The data rate
is higher than 10kbps, allowing the device to support more complicated control protocols.
For enhanced power saving, the device includes a data tracking function. The data tracking function
enables the PLL to be activated as long as high transient data input trigger signals are received. The
PLL will also be automatically switched off if there are no data input transients for a time exceeding
approximately 300ms. As the RF Transmitter will also generate a synchronising signal, the MCU can
use its internal RC clock rather than using an additional crystal for the MCU system clock. These
features add up to ensure that the devices can offer excellent capabilities in terms of functionality and
power-saving as well as being highly cost effective in a huge range of remote wireless applications
Selection Guide
Most features are common to all devices, the main feature distinguishing them are Memory capacity
and A/D converter. The following table summarises the main features of each device.
Part No.
Program
Memory
Data
Memory
Data
EEPROM
I/O
HT68F03T3
1K´14
64´8
64´8
7
1
¾
HT66F03T3
1K´14
64´8
64´8
7
1
12-bit´4
Rev. 1.30
External
A/D
Interrupt Converter
2
Timer
Module
10-bit CTM´1
10-bit STM´1
10-bit CTM´1
10-bit STM´1
Comparator
RF
Transmitter
Stack Package
¾
Ö
4
16NSOP
12-bit´4
Ö
4
16NSOP
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Block Diagram
The following block diagram illustrates the dual-chip structure of the devices, where an individual
MCU and RF Transmitter devices are combined into a single package.
V D D
P A 4 /T C K 0 /T P 1 /D O U T
C R E F
A V D D
P A 0 /C + /A N 0
C R E F
P A 1 /C -/A N 1 /V R E F
P A O U T
R F M o d u le
P A 2 /C X /[T P 0 ]/A N 2
H T 6 6 F 0 3
H T 6 8 F 0 3
P A 3 /IN T /T C K 1 /T P 0 /A N 3
P A 5 /[T P 0 ]/O S C 2
X O U T
D IN
X IN
E N
P A 6 /[T C K 0 ]/[T P 1 ]/O S C 1
P A 7 /[IN T ]/[T C K 0 ]/[T C K 1 ]/[T P 1 ]/R E S
V S S
A V S S
Internal Chip Interconnection Diagram
Note: The AN0~AN3 and VREF shared-pin functions only exist in the HT66F03T3 device.
L o w
V o lta g e
D e te c t
L o w
V o lta g e
R e s e t
R F
T r a n s m itte r
W a tc h d o g
T im e r
R e s e t
C ir c u it
8 - b it
R IS C
M C U
C o re
E R C /H X T /
L IR E /L X T
O s c illa to r s
F la s h /E E P R O M
P r o g r a m m in g
C ir c u itr y ( IS P )
F la s h
P ro g ra m
M e m o ry
In te rru p t
C o n tr o lle r
E E P R O M
D a ta
M e m o ry
R A M
D a ta
M e m o ry
T B 0 /T B 1
H IR C
O s c illa to r
1 2 - B it A /D
C o n v e rte r
C o m p a ra to rs
I/O
T M 0
T M 1
Note: The A/D Converter function only exists in the HT66F03T3 device.
Rev. 1.30
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July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Pin Assignment
P A 7 /[IN T ]/[T C K 0 ]/[T C K 1 ]/[T P 1 ]/R E S
1
1 6
V S S
V D D
2
1 5
P A 0 /C + /A N 0
P A 6 /[T C K 0 ]/[T P 1 ]/O S C 1
3
1 4
P A 1 /C -/A N 1 /V R E F
P A 5 /[T P 0 ]/O S C 2
4
1 3
P A 2 /C X /[T P 0 ]/A N 2
P A 4 /T C K 0 /T P 1 /D O U T
5
1 2
P A 3 /IN T /T C K 1 /T P 0 /A N 3
X O U T
A V D D
6
1 1
X O U T
X IN
A V S S
7
1 0
X IN
P A O U T
8
9
P A 7 /[IN T ]/[T C K 0 ]/[T C K 1 ]/[T P 1 ]/R E S
1
1 6
V S S
V D D
2
1 5
P A 0 /C +
P A 6 /[T C K 0 ]/[T P 1 ]/O S C 1
3
1 4
P A 1 /C -/V R E F
P A 5 /[T P 0 ]/O S C 2
4
1 3
P A 2 /C X /[T P 0 ]
P A 4 /T C K 0 /T P 1 /D O U T
5
1 2
P A 3 /IN T /T C K 1 /T P 0
A V D D
6
1 1
A V S S
7
1 0
P A O U T
8
9
C R E F
C R E F
H T 6 6 F 0 3 T 3
1 6 N S O P -C
H T 6 8 F 0 3 T 3
1 6 N S O P -C
Pin Description
HT66F03T3
Pin Name
Function
OP
I/T
O/T
ST
CMOS
Pin-Shared Mapping
PA0~PA7
Port A
PAWU
PAPU
AN0~AN3
A/D Converter input
ACERL
AN
¾
PA0~PA3
VREF
A/D Converter reference input
ADCR1
AN
¾
PA1
C-
Comparator input
C+
Comparator input
CX
Comparator output
TCK0
TM0 input
¾
AN
¾
PA1
CPC
AN
¾
PA0
¾
CMOS
PA2
PRM
ST
¾
PA4, PA6 or PA7
TCK1
TM1 input
PRM
ST
¾
TP0
TM0 I/O
PRM
ST
CMOS
PA3, PA5 or PA2
TP1
TM1 I/O
PRM
ST
CMOS
PA4, PA6 or PA7
INT
External interrupt
PRM
ST
¾
PA3 or PA7
PA3 or PA7
OSC1
HXT/ERC/LXT pin
CO
HXT/LXT
¾
PA6
OSC2
HXT/LXT pin
CO
¾
HXT/LXT
PA5
RES
Reset input
CO
ST
¾
PA7
VDD
MCU power supply
¾
PWR
¾
¾
VSS
MCU ground
¾
PWR
¾
¾
PAOUT
RF power amplifier output
¾
¾
PWR
NSO
PAWU
PAPU
ST
CMOS
PA4
¾
CMOS
¾
DOUT
Data Output
CREF
RF transmitter synnchronising signal
¾
XOUT
RF transmitter crystal pin
¾
¾
HXT
¾
XIN
RF transmitter crystal pin
¾
HXT
¾
¾
AVDD
RF transmitter power supply
¾
PWR
¾
¾
AVSS
RF transmitter ground
¾
PWR
¾
¾
Note:
I/T: Input type; O/T: Output type
OP: Optional by configuration option (CO) or register option
PWR: Power; CO: Configuration option; ST: Schmitt Trigger input; NS: non-standard input
CMOS: CMOS output; NMOS: NMOS output
SCOM: Software controlled LCD COM; AN: Analog input pin
HXT: High frequency crystal oscillator
LXT: Low frequency crystal oscillator
NSO: Non-standard output
Rev. 1.30
4
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
HT68F03T3
Pin Name
Function
PA0~PA7
Port A
C-
Comparator input
C+
Comparator input
CX
Comparator output
TCK0
TM0 input
OP
I/T
O/T
PAWU
PAPU
ST
CMOS
AN
¾
PA1
AN
¾
PA0
¾
CMOS
PA2
ST
¾
CPC
PRM
Pin-Shared Mapping
¾
PA4, PA6 or PA7
TCK1
TM1 input
PRM
ST
¾
TP0
TM0 I/O
PRM
ST
CMOS
PA3, PA5 or PA2
TP1
TM1 I/O
PRM
ST
CMOS
PA4, PA6 or PA7
INT
External interrupt
PRM
ST
¾
PA3 or PA7
OSC1
HXT/ERC/LXT pin
CO
HXT/LXT
¾
PA6
OSC2
HXT/LXT pin
CO
¾
HXT/LXT
PA5
RES
Reset input
CO
ST
¾
PA7
VDD
MCU power supply
¾
PWR
¾
¾
VSS
MCU ground
¾
PWR
¾
¾
PAOUT
RF power amplifier output
¾
PWR
NSO
¾
DOUT
Data Output
PAWU
PAPU
ST
CMOS
PA4
CREF
RF transmitter synnchronising signal
¾
¾
CMOS
¾
XOUT
RF transmitter crystal pin
¾
¾
HXT
¾
XIN
RF transmitter crystal pin
¾
HXT
¾
¾
AVDD
RF transmitter power supply
¾
PWR
¾
¾
AVSS
RF transmitter ground
¾
PWR
¾
¾
Note:
PA3 or PA7
I/T: Input type; O/T: Output type
OP: Optional by configuration option (CO) or register option
PWR: Power; CO: Configuration option; ST: Schmitt Trigger input; NS: non-standard input
CMOS: CMOS output; NMOS: NMOS output
SCOM: Software controlled LCD COM; AN: Analog input pin
HXT: High frequency crystal oscillator
LXT: Low frequency crystal oscillator
NSO: Non-standard output
Rev. 1.30
5
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Absolute Maximum Ratings
Operating Supply Voltage ........................................................................................VDD=2.0V~3.3V
Voltage on I/O Pins ........................................................................................VSS-0.3V to VDD+0.3V
Storage Temperature Range .......................................................................................-50°C to 125°C
Lead Temperature (Soldering, 10 seconds) ............................................................................+300°C
ESD Rating...................................................................................................................................3kV
Ambient Operating Temperature (TA).......................................................................-40°C to +85°C
Programmable Transmitter Frequency Ran.......................................................300MHz to 450MHz
Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of the device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
D.C. Characteristics
Ta=25°C
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
fSYS=8MHz
2.2
¾
3.6
V
fSYS=12MHz
2.7
¾
3.6
V
VDD
VDD
AVDD
IDD
Conditions
Operating Voltage
(HXT, ERC, HIRC)
¾
RF Transmitter Power Supply
¾
¾
2.0
¾
3.6
V
3V
No load, fSYS=8MHz,
ADC disable, WDT enable
¾
1.2
2.0
mA
3V
No load, fSYS=12MHz,
ADC disable, WDT enable
¾
1.8
3.0
mA
3V
No load, system HALT,
fSYS=32768Hz
¾
1.3
3.0
mA
Operating Current (HIRC)
ISTB
Standby Current (Idle) (LIRC),
(fSYS=off, fS=fSUB=fLIRC)
VIL1
Input Low Voltage for I/O Ports,
¾
TCKx and INT
¾
0
¾
0.3VDD
V
VIH1
Input High Voltage for I/O Ports,
¾
TCKx and INT
¾
0.7VDD
¾
VDD
V
VIL2
Input Low Voltage (RES)
¾
¾
0
¾
0.4VDD
V
VIH2
Input High Voltage (RES)
¾
¾
0.9VDD
¾
VDD
V
¾
LVR Enable, 2.10V option
-5%
2.10
+5%
V
Low Voltage Reset
LVR Enable, 3.15V option
-5%
3.15
+5%
V
¾
20
60
100
kW
VLVR1
VLVR2
RPH
Rev. 1.30
Pull-high Resistance for I/O Ports
3V
6
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
A.C. Characteristics
Ta=25°C
Test Conditions
Symbol
Parameter
VDD
fSYS
System Clock (HIRC)
fTIMER
Timer I/P Frequency (TMR)
Min.
Typ.
Max.
Unit
-15%
¾
+5%
MHz
Conditions
3V
Ta= -40°C~85°C
¾
2.2V~3.6V
0
¾
8
MHz
¾
2.7V~3.6V
0
¾
12
MHz
tRES
External Reset Low Pulse Width
¾
¾
1
¾
¾
ms
tSST
System Start-up Timer Period
¾
Wake-up from HALT
¾
15~16
¾
tSYS
tLVR
Low Voltage Width to Reset
¾
¾
120
240
480
ms
Note:
tSYS=1/fSYS
A/D Converter Electrical Characteristics
Ta=25°C
Test Conditions
Symbol
Parameter
VDD
Min.
Typ.
Max.
Unit
2.7
¾
3.6
V
Conditions
VADC
A/D Operating Voltage
¾
VADI
A/D Converter Input Voltage
¾
¾
0
¾
VREF
V
VREF
A/D Converter Reference Voltage
¾
¾
2
¾
VADC
V
tADCK
A/D Converter Clock Period
2.2V~
3.6V
¾
0.5
¾
10
ms
2.7V
tADS
A/D Converter Sampling Time
VREF=VADC=VDD,
tAD=0.5ms (calculated
on best-fit line)
¾
4
¾
tADCK
3V
VREF=VADC
RF Transmitter Electrical Characteristics
Specifications apply for AVDD=3.0V, Ta = 25°C, Freq X¢tal OSC=13.560MHz, DATA is
transmitting. Bold values indicate -20°C to 70°C unless otherwise noted. 1kbps data rate 50% duty
cycle. RL 50W load (matched)
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
@315MHz, POUT=+10dBm
¾
12.5
¾
mA
@433.92MHz
¾
12.5
¾
mA
@315MHz
¾
3.0
¾
mA
@433.92 MHz
¾
3.0
¾
mA
@315MHz
¾
1.0
¾
mA
@433.92 MHz
¾
1.0
¾
mA
@315MHz *
¾
9.5
¾
dBm
@433.92MHz *
¾
9.5
¾
dBm
AVDD
II
IO
ISTB
Data High Current
Data Low Current
EN Low & DIN Low Current
Conditions
3V
3V
3V
RF and Crystal
Output power level
Rev. 1.30
3.3V
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July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Test Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
@630MHz, 2nd harm
¾
-48
¾
dBc
@945MHz, 3rd harm
¾
-60
¾
dBc
@867.84MHz, 2nd harm
¾
-45
¾
dBc
@1301.76MHz, 3rd harm
¾
-55
¾
dBc
AVDD
Harmonics output for 315 MHz
Harmonics Output for 433.92MHz
Note:
Conditions
3V
3V
Extinction Ratio for ASK 10Kbps
3V
¾
¾
70
¾
dBc
Data Rate
3V
¾
10
¾
¾
kbps
@315MHz
¾
kHz
3V
¾
<900
Occupied Bandwidth
@433.92MHz
¾
<1000
¾
kHz
100kHz from Carrier
¾
-78
¾
dBc/Hz
1000kHz from Carrier
¾
-77
¾
dBc/Hz
100kHz from Carrier
¾
-78
¾
dBc/Hz
1000kHz from Carrier
¾
-76
¾
dBc/Hz
315MHz Single Side Band Phase
Noise
3V
433.92MHz Single Side Band
Phase Noise
3V
XTLIN, XTLOUT
3V
Pin capacitance
¾
2
¾
pF
Output Blanking
3V
Standby transition from low
to high **
¾
500
¾
ms
ASK to RF Out Response Time
3V
Delta between ASK input
transition from Low To High
to RF output transition from
low to high
¾
1
¾
ms
@315MHz
¾
Hz
3V
¾
150
CREF Clock Output Frequency
@433.92MHz
¾
207
¾
Hz
* Depend on PC board layout
** Generally limited by crystal
Power-on Reset Characteristics
Ta=25°C
Test Conditions
Symbol
Parameter
VDD
Conditions
Min.
Typ.
Max.
Unit
VPOR
VDD Start Voltage to Ensure
Power-on Reset
¾
¾
¾
¾
100
mV
RPOR AC
VDD Raising Rate to Ensure
Power-on Reset
¾
¾
0.035
¾
¾
V/ms
tPOR
Minimum Time for VDD Stays at
VPOR to Ensure Power-on Reset
¾
¾
1
¾
¾
ms
V
D D
tP
O R
R P O R _ A C
V
P O R
T im e
Rev. 1.30
8
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Functional Description
As these device packages contain different chips internally, for a detailed functional description, users
must refer to the relevant datasheets for the related MCU. The following table shows which individual
devices are inside each package.
Device
MCU
HT66F03T3
HT66F03
HT68F03T3
HT68F03
Multi-chip Internal Devices
One of the MCU I/O pins, PA4, is internally connected to the data input pin, DIN, of RF transmitter
chip and should therefore be setup as an output by the MCU. This pin is used to generate the encoding
data. There are some special considerations which need to be taken into account when using these
devices. These points will be mentioned in the hardware and software consideration sections.
Hardware Considerations
As these devices are composed of an individual MCU and RF Transmitter, using them together
requires the user to take care of some special points.
Absolute Maximum Ratings
The Absolute Maximum Ratings must be checked for discrepancies and the necessary care taken in
device handling and usage.
Power Supply
Examination of the block diagram will reveal that the Power Supply and Ground pins of the RF
Transmitter and MCU are independent and must be connected together if they are to share the same
power supply. If the same power supply is to be used for both chips then care must be taken as the
maximum power supply voltage of the RF Transmitter is less than the maximum MCU power supply
voltage. Also note that higher MCU system clock frequencies may require MCU power supply
voltages that exceed the RF Transmitter maximum power supply voltage. For this reason it will not be
possible to operate the MCU at its maximum system clock frequency if the MCU shares the same
power supply as the RF Transmitter.
When calculating the total current consumption of the device, the specified currents of the MCU part
and the RF part in the DC specifications, must be added together. Similarly, the standby current is the
sum of the two individual chip standby currents.
Operation
The RF data to be transmitted is derived from the PA4 line. When the PA4 line is high the RF
Transmitter will transmit it data allowing users to program their encoded data on this line. If the RF
transmitter is in its standby mode then there will be a delay of about 500us before transmission begins.
When the device is transmitting, a synchronising signal will be generated on the CREF pin which can
be connected externally to an MCU I/O pin for calibration of the MCU internal RC oscillator. To avoid
the RF circuits entering an unknown state, pin PA4 should be setup as an output as soon as possible
after power-on.
To minimise power consumption, only when PA4 is high, can the RF signal be transmitted and the
reference clock on CREF be generated. If no data transitions are generated on PA4 for 300~500ms, the
transmitter will enter a standby state and the RF circuits will be switched off along with the internal
PLL to save power. The signal generated on the CREF pin will also remain at a low level. The internal
PLL function is used to generate the RF frequency with a multiplier of 32 times the crystal frequency.
The relationship is: RF frequency = 32 x Crystal frequency. Therefore a 9.84375MHz crystal will
Rev. 1.30
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July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
generate an RF frequency of 315MHz and a13.56MHz crystal will generate an RF frequency of
433.92MHz. All PLL circuits are contained within the device and the only external component
required is a suitable crystal.
Power Down and Wake up
It is important to note that if the MCU is powered down or placed into a low power mode to conserve
power, that the RF Transmitter may continue running and will consume a certain amount of power.
Before powering down the MCU it is important to carefully manage the PA4 pin to ensure the
RF-Transmitter enters its power down state.
Unbonded MCU pins
Examination of the relevant MCU datasheet will reveal that not all of the MCU I/O port lines are
bonded out to external pins. As a result special attention regarding initialisation procedures should be
paid to these port lines. Users should therefore ensure that these I/O pins are setup as inputs with pull
high resistors or as outputs to avoid additional power consumption resulting from floating input pins.
Programming Considerations
As MCU I/O pin PA4 is used to control the RF transmitter function, care must be taken to manage this
pin correctly in the application program. As line PA4 is used to send data to the RF circuitry this
multi-function pin line must be correctly setup to function as logic output. To avoid erroneous
operation of the RF circuits this line should be setup as an output immediately after power-on.
If the CREF pin is connected externally to an MCU I/O pin for synchronisation purposes, then this pin
must be properly setup as a logic input immediately after power on.
As the MCU will be powered down independently of the RF Transmitter Peripheral Module, care must be
taken to ensure that the MCU first clears its PA4 line to zero before powering down. This will allow the RF
Transmitter Peripheral Module to enter its standby state and thus keep power consumption to a minimum.
Application Circuits
Note:
1. A 9.84375MHz crystal is used for an RF frequency of 315MHz
A 13.56MHz crystal is used for an RF frequency of 433.92MHz
2. The extra LC filter on the PAOUT pin can reduce second order harmonics
3. The bracketed L and C values are for 433.92MHz operation
Rev. 1.30
10
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Package Information
16-pin NSOP (150mil) Outline Dimensions
A
1 6
9
1
B
8
C
C '
G
H
D
E
=
F
MS-012
Symbol
Nom.
Max.
A
0.228
¾
0.244
B
0.150
¾
0.157
C
0.012
¾
0.020
C¢
0.386
¾
0.402
D
¾
¾
0.069
E
¾
0.050
¾
F
0.004
¾
0.010
G
0.016
¾
0.050
H
0.007
¾
0.010
a
0°
¾
8°
Symbol
A
Rev. 1.30
Dimensions in inch
Min.
Dimensions in mm
Min.
Nom.
Max.
5.79
¾
6.20
B
3.81
¾
3.99
C
0.30
¾
0.51
C¢
9.80
¾
10.21
D
¾
¾
1.75
E
¾
1.27
¾
F
0.10
¾
0.25
G
0.41
¾
1.27
H
0.18
¾
0.25
a
0°
¾
8°
11
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Reel Dimensions
D
T 2
A
C
B
T 1
SOP 16N (150mil)
Symbol
Description
Dimensions in mm
A
Reel Outer Diameter
330.0±1.0
B
Reel Inner Diameter
100.0±1.5
C
Spindle Hole Diameter
D
Key Slit Width
T1
Space Between Flange
T2
Reel Thickness
Rev. 1.30
13.0
+0.5/-0.2
2.0±0.5
16.8
+0.3/-0.2
22.2±0.2
12
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Carrier Tape Dimensions
P 0
D
P 1
t
E
F
W
B 0
C
D 1
P
K 0
A 0
R e e l H o le
IC
p a c k a g e p in 1 a n d th e r e e l h o le s
a r e lo c a te d o n th e s a m e s id e .
SOP 16N (150mil)
Symbol
Description
Dimensions in mm
W
Carrier Tape Width
16.0±0.3
P
Cavity Pitch
8.0±0.1
E
Perforation Position
1.75±0.1
F
Cavity to Perforation (Width Direction)
7.5±0.1
D
Perforation Diameter
1.55
+0.10/-0.00
D1
Cavity Hole Diameter
1.50
+0.25/-0.00
P0
Perforation Pitch
4.0±0.1
P1
Cavity to Perforation (Length Direction)
2.0±0.1
A0
Cavity Length
6.5±0.1
B0
Cavity Width
10.3±0.1
K0
Cavity Depth
2.1±0.1
t
Carrier Tape Thickness
0.30±0.05
C
Cover Tape Width
13.3±0.1
Rev. 1.30
13
July 4, 2011
HT66F03T3/HT68F03T3
8-Bit Flash MCU with RF Transmitter
Holtek Semiconductor Inc. (Headquarters)
No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan
Tel: 886-3-563-1999
Fax: 886-3-563-1189
http://www.holtek.com.tw
Holtek Semiconductor Inc. (Taipei Sales Office)
4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan
Tel: 886-2-2655-7070
Fax: 886-2-2655-7373
Fax: 886-2-2655-7383 (International sales hotline)
Holtek Semiconductor Inc. (Shenzhen Sales Office)
5F, Unit A, Productivity Building, No.5 Gaoxin M 2nd Road, Nanshan District, Shenzhen, China 518057
Tel: 86-755-8616-9908, 86-755-8616-9308
Fax: 86-755-8616-9722
Holtek Semiconductor (USA), Inc. (North America Sales Office)
46729 Fremont Blvd., Fremont, CA 94538, USA
Tel: 1-510-252-9880
Fax: 1-510-252-9885
http://www.holtek.com
Copyright Ó 2011 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices
or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information,
please visit our web site at http://www.holtek.com.tw.
Rev. 1.30
14
July 4, 2011