CYSTEKEC MTP1067C6-0-T1-G P-channel enhancement mode mosfet Datasheet

Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 1/ 8
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTP1067C6
Features
• High speed switching
• Low-voltage drive(-1.8V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Equivalent Circuit
BVDSS
ID
RDSON(TYP)
VGS=-4.5V, ID=-1.06A
VGS=-2.5V, ID=-1.0A
-20V
-1.06A
0.112Ω
0.149Ω
VGS=-1.8V, ID=-0.49A
0.206Ω
Outline
MTP1067C6
SOT-563
D
D
S
D
D
G
Ordering Information
Device
MTP1067C6-0-T1-G
Package
SOT-563
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP1067C6
CYStek Product Specification
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-4.5V, TA=25C
Continuous Drain Current @ VGS=-4.5V, TA=70C
Pulsed Drain Current
TA=25C
Power Dissipation
TA=70C
Operating Junction and Storage Temperature Range
Symbol
Limits
VDSS
-20
±12
-1.06
-0.85
-8
VGSS
ID
IDM
Unit
V
A
(Note 1)
236 (Note 2)
151 (Note 2)
-55~+150
PD
Tj ; Tstg
mW
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient (Note 2)
Thermal Resistance, Junction-to-ambient, steady state (Note 2)
Symbol
RθJA
Typical
440
540
Maximum
530
650
Unit
C/W
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2.When device is mounted on a 1”×1” FR-4 board, t≤5s.
Electrical Characteristics (Ta=25C, unless otherwise specified)
Symbol
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
Dynamic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
MTP1067C6
Min.
Typ.
Max.
-20
-0.45
-
0.112
0.149
0.206
2.7
-0.95
±100
-1
-10
0.150
0.200
0.250
-
-
386
37
32
4.3
0.69
1.01
7
17.4
26.4
6.4
10.5
10.5
26
40
9.6
15
Unit
Test Conditions
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±12V, VDS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=85°C
VGS=-4.5V, ID=-1.06A
VGS=-2.5V, ID=-1.0A
VGS=-1.8V, ID=-0.49A
VDS=-10V, ID=-1.06A
pF
VDS=-10V, VGS=0, f=1MHz
nC
VDS=-10V, ID=-1.06A, VGS=-4.5V
ns
VDD=-10V, ID=-0.76A, VGS=-4.5V, RG=1Ω

f=1MHz
V
nA
μA

CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
IS
ISM
VSD
trr*
Qrr*
ta
tb
-
-0.8
5.3
2.1
4.8
0.5
-1.06
-8
-1.2
-
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 3/ 8
A
V
ns
nC
ns
ns
IS=-0.63A, VGS=0V
IF=-1A, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTP1067C6
CYStek Product Specification
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
8
ID=-250μA,
VGS=0V
6
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
7
-VGS=5V, 4.5V, 4V, 3.5V, 3V, 2.5V
5
4
-VGS=2V
3
2
1
-VGS=1.5V
0.5
1
1.5
2
2.5
3
-VDS, Drain-Source Voltage(V)
3.5
1
0.8
0.6
0
0
1.2
-75 -50 -25
4
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
300
1.2
250
-VSD, Source-Drain Voltage(V)
RDS( on), Static Drain-Source On-State
Resistance( mΩ)
-VGS=1.5V
-VGS=1.8V
200
150
100
-VGS=2V
-VGS=3V
50
-VGS=4.5V
Tj=25°C
0.8
0.6
0.4
0.01
0.1
-ID, Drain Current(A)
0
1
0.3
0.6
0.9
1.2
-IDR, Reverse Drain Current (A)
1.5
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
450
R DS(ON), Normalized Static DrainSource On-State Resistance
500
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
Tj=150°C
0.2
0
0.001
ID=-1.06A
400
350
300
250
200
150
100
50
VGS=-4.5V, ID=-1.06A
1.8
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 112mΩ typ.
0.4
0
0
MTP1067C6
VGS=0V
1
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
-75
-25
25
75
125
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
-VGS(t h), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
Coss
Crss
1.4
1.2
ID=-1mA
1
0.8
ID=-250μA
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75
100
-25
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=540°C/W
8
Power (W)
175
5
10
6
4
2
0
0.001
4
3
2
VDS=-10V
1
ID=-1.06A
0
0.01
0.1
1
Pulse Width(s)
10
0
100
1
Maximum Safe Operating Area
1
1ms
10ms
100ms
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=540°C/W
Single Pulse
0.01
DC
0.001
0.01
MTP1067C6
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
-ID, Maximum Drain Current(A)
100μs
0.1
2
3
4
Qg, Total Gate Charge(nC)
5
6
Maximum Drain Current vs JunctionTemperature
10
-ID, Drain Current (A)
25
75
125
Tj, Junction Temperature(°C)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TA=25°C, VGS=-4.5V, RθJA=540°C/W
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
GFS, Forward Transfer Admittance(S)
10
1
0.1
VDS=-10V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
-ID, Drain Current(A)
1
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*Zθ JA(t)
4.Rθ JA=540°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTP1067C6
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 7/ 8
Reel Dimension
Carrier Tape Dimension
MTP1067C6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 8/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP1067C6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C962C6
Issued Date : 2014.07.31
Revised Date :
Page No. : 9/ 8
SOT-563 Dimension
Marking:
Product Code
AC
Date Code: Year+Month
Year: 6→2006, 7→2007
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
Style:
Pin 1. Drain (D)
Pin 2. Drain (D)
Pin 3. Gate (G)
Pin 4. Source (S)
Pin 5. Drain (D)
Pin 6. Drain (D)
Inches
Min.
Max.
0.021
0.024
0.000
0.002
0.018
0.022
0.004
0.006
0.059
0.067
DIM
A
A1
e
c
D
Millimeters
Min.
Max.
0.525
0.600
0.000
0.050
0.450
0.550
0.090
0.160
1.500
1.700
DIM
b
E1
E
L
θ
6-Lead SOT-563 Plastic
Surface Mounted Package
CYStek Package Code: C6
Inches
Min.
Max.
0.007
0.011
0.043
0.051
0.059
0.067
0.004
0.012
7° REF
Millimeters
Min.
Max.
0.170
0.270
1.100
1.300
1.500
1.700
0.100
0.300
7° REF
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
 Lead : Pure tin plated.
 Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP1067C6
CYStek Product Specification