DATA SHEET LASER DIODE NDL7673P 1310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7673P is a 1310 nm DFB (Distributed Feed-Back) laser diode, that has a newly developed Strained Multiple Quantum Well (MQW) structure, butterfly package module with optical isolator. It is especially designed for a 16 mW light source of CATV analog applications. PACKAGE DIMENSIONS FEATURES in millimeters 15.24 CSO = ð55 dBc Max. • High output power Pf = 16.0 mW • Long wavelength OP = 1310 nm • High isolation 40 dB • Internal InGaAs monitor PD 2.54 0.51 7 1 8 14 4 – φ 2.67 15.0 0.9 6.0 CTB = ð60 dBc Max. 8.89 ±0.13 10 MIN. • Low distortion 12.7 ±0.13 RIN = ð155 dB/Hz Max. • Low noise • Internal thermoelectric cooler • Hermetically sealed 14 pin butterfly Package 20.83 ±0.13 26.04 ±0.13 • Singlemode fiber pigtail Optical Fiber SM-9/125, Length = 2 m Part Number 7.0 ORDERING INFORMATION 2.03 5.6 • High reliability 11.0 ±0.2 • Wide operating temperature range Available Connector NDL7673P Without Connector NDL7673PC With FC-UPC Connector NDL7673PD With SC-UPC Connector 29.97 ±0.13 PIN CONNECTIONS FUNCTION PIN No. 1 2 3 4 5 6 7 PIN No. FUNCTION 8 9 10 11 12 13 NC NC CASE GROUND LD CATHODE NC LD ANODE, CASE GROUND COOLER CATHODE COOLER ANODE THERMISTOR PD ANODE PD CATHODE CASE GROUND NC NC 14 TOP VIEW THERMISTOR Cooler #1 #7 + PD LD #8 – #14 The information in this document is subject to change without notice. Document No. P10478EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan © 1996 NDL7673P ABSOLUTE MAXIMUM RATINGS (TC = 25 qC) Parameter Symbol Ratings Unit Operating Case Temperature TC ð20 to +65 qC Storage Temperature Tstg ð40 to +70 qC Lead Soldering Temperature (10 s) Tsld 260 qC Optical Output Power Pf 25 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Cooler Current IC 1.0 A Cooler Voltage VC 2.0 V ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Symbol Threshold Current Ith Forward Voltage VF Optical Output Power from Fiber (Recommended Operating Point) Conditions IF = 30 mA *1 Pop TYP. MAX. Unit 20 35 mA 0.9 1.2 1.4 V 15.0 16.0 Spontaneous Emission Power from Fiber Ps Ib = Ith Differential Efficiency from Fiber Kd Pf d Pop 0.25 Peak Emission Wavelength OP Pf = Pop 1290 1310 SMSR Pf = Pop 30 35 f Pf = Pop 900 Sub-mode Suppression Ratio 1 dB Bandwidth Relative Intensity Noise Composite Second Order Distortion Composite Triple Beat Distortion Carrier to Noise Ratio Isolation *2 RIN *3 CSO CTB *3 *3 CNR mW 50 PW mW/mA 1330 nm dB MHz Pf = Pop ð155 dB/Hz Pf = Pop ð55 dBc Pf = Pop ð60 dBc Pf = Pop IS *1 Recommended Pop value is supplied with each device. *2 Conditions : Pf = Pop, CW Measuring Bandwidth: 50 MHz to 600 MHz Optical Reflection ð40 dB *3 Conditions : Pf = Pop, Optical Modulation Index = 3.5 %/channel 79 channel unmodulated carriers (55.25 MHz to 547.25 MHz) Optical Reflection ð40 dB, Optical Loss = 12 dB 2 MIN. 49 35 dBc 40 dB NDL7673P ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Symbol Conditions Monitor Current Im VR = 5 V, Pf = Pop Dark Current ID VR = 5 V J Tracking Error *4 MIN. TYP. MAX. Unit PA 50 2 Im = const. 10 nA 0.5 dB *4 Tracking Error : J J = 10 log Pf Pop (mW) Pf TLD = TC = 25 ˚C TLD = 25 ˚C, TC = –20 to +65 ˚C Pop Pf 0 Im Im (@ Pf(25 ˚C) = Pop) ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TE Cooler: TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Symbol *5 Conditions MIN. TYP. MAX. Unit 9.5 10 10.5 k: Thermistor Resistance R TLD = 25 qC Cooler Current IC 'T = 40 K 0.6 0.8 A Cooler Voltage VC 'T = 40 K 1.1 1.5 V 'T Cooling Capacity *6 IC = 0.8 A, Pf = Pop 40 K *5 B Constant = 3400 r100 K *6 'T = |TC - TLD| DFB LASER FAMILY FOR CATV/ANALOG APPLICATIONS Pop: Operating point power (min. value) FEATURES 3 mW min. 14 PIN BFY MODULE WITH SMF NDL7680P 4 mW min. NDL7650P 6 mW min. NDL7660P 8 mW min. NDL7670P 12 mW min. NDL7672P 15 mW min. NDL7673P 3 NDL7673P REFERENCE Document Name 4 Document No. NEC semiconductor device reliability/quality control system LEI-1201 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E NDL7673P [MEMO] 5 NDL7673P CAUTION Within this module there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan Type number: Manufactured: Serial Number: This product conforms to FDA regulations as applicable to standards 21 CFR Chapter 1. Subchapter J. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94. 11