JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC369 TRANSISTOR (PNP) 1.EMITTER FEATURES z High Current z Low Voltage 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.625 W Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction temperature 150 ℃ Tstg storage temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -5 V Collector cut-off current ICBO VCB=-25V,IE=0 -10 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -10 μA hFE(1) VCE=-1V, IC=-0.5A 85 hFE(2) VCE=-10V, IC=-5mA 50 hFE(3) VCE=-1V, IC=-1A 60 VCE(sat) IC=-1A,IB=-0.1A -0.5 V Base-emitter voltage VBE IC=-1A, VCE=-1V -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage www.cj-elec.com VCE=-5V,IC=-10mA,f=35MHz 1 65 375 MHz C,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP3 C,Dec,2015