DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces version, DS4090-3.0 DS4090-4.0 November 2005 (LN24306) APPLICATIONS KEY PARAMETERS ITCM 1200A VDRM 2500V IT(AV) 500A dVD/dt 1000V/µs 300A/µs diT/dt ■ Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters. ■ Choppers. ■ Welding. ■ Induction Heating. ■ DC/DC Converters. FEATURES ■ Double Side Cooling. ■ High Reliability In Service. ■ High Voltage Capability. ■ Fault Protection Without Fuses. ■ High Surge Current Capability. ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements. Outline type code: P. See Package Details for further information. VOLTAGE RATINGS Type Number DG406BP25 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 1200 A ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.5µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 500 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 630 A 1/19 DG406BP25 SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 8.0 kA I2t I2t for fusing 10ms half sine. Tj =125oC 0.32 x 106 A2s Critical rate of rise of on-state current VD = 2000V, IT = 1000A, Tj = 125oC, IFG ≥ 30A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs IT = 1000A, VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 200 nH diT/dt dVD/dt LS Rate of rise of off-state voltage Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter VRGM Peak reverse gate voltage IFGM Peak forward gate current Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V 20 70 A PFG(AV) Average forward gate power - 10 W PRGM Peak reverse gate power - 15 kW diGQ/dt Rate of rise of reverse gate current 15 60 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.041 o Anode side cooled - 0.07 o Cathode side cooled - 0.1 o - 0.009 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 11.0 15.0 THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - 2/19 Conditions Clamping force 12.0kN With mounting compound per contact C/W C/W C/W C/W C C kN DG406BP25 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 1000A peak, IG(ON) = 4A d.c. - 2.5 V IDM Peak off-state current VDRM = 2500V, VRG = 0V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.5 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 1040 mJ td Delay time IT = 1000A, dIT/dt = 300A/µs - 1.5 µs tr Rise time IFG = 30A, rise time ≤ 1.0µs - 3.0 µs Turn-off energy - 2300 mJ tgs Storage time - 14.0 µs tgf Fall time IT = 1000A, VDM = 2500V - 1.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 1.0µF, - 15.5 µs QGQ Turn-off gate charge diGQ/dt = 30A/µs - 3000 µC QGQT Total turn-off gate charge - 6000 µC IGQM Peak reverse gate current - 420 A EOFF 3/19 DG406BP25 2.0 4.0 1.5 3.0 1.0 2.0 VGT 0.5 1.0 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (˚C) 125 0 150 Instantaneous on-state current ITM - (kA) 4.0 Measured under pulse conditions. IG(ON) = 4.0A Half sine wave 10ms 3.0 1.5 Tj = 25˚C Tj = 125˚C 1.0 2.0 0.5 1.0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V) Fig.2 On-state characteristics 4/19 Maximum permissible turn-off current ITCM - (kA) Fig.1 Maximum gate trigger voltage/current vs junction temperature 5.0 Conditions: Tj = 125˚C, VDM = VDRM, dIGQ/dt = 30A/µs 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 Snubber capacitance CS - (µF) Fig.3 Maximum dependence of ITCM on CS 2.0 DG406BP25 0.05 dc 0.03 0.02 0.01 0 0.001 0.01 0.1 Time - (s) 100 10 1.0 Fig.4 Maximum (limit) transient thermal impedance - double side cooled Peak half sine wave on-state current - (kA) Thermal impedance - ˚C/W 0.04 20 15 10 5 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 1.0 Fig.5 Surge (non-repetitive) on-state current vs time 5/19 Mean on-state power dissipation - (W) DG406BP25 1500 Conditions: IG(ON) = 4.0A dc 180˚ 1000 120˚ 60˚ 30˚ 500 0 0 200 400 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 Maximum permissible case temperature - (˚C) 130 Mean on-state power dissipation - (W) Fig.6 Steady state rectangluar wave conduction loss - double side cooled 1500 Conditions: IG(ON) = 4.0A 1000 180˚ 120˚ 90˚ 60˚ 30˚ 500 0 0 100 200 300 400 500 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 130 Maximum permissible case temperature - (˚C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG406BP25 Conditions: Tj = 25˚C, IFGM = 30A, CS = 1.0µF, dI/dt = 300A/µs, 750 dIFG/dt = 30A/µs VD = 2000V VD = 1500V 500 VD = 1000V 250 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.8 Turn-on energy vs on-state current 2000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 1000 Conditions: Tj = 25˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 1500 1000 VD = 2000V VD = 1500V 500 0 VD = 1000V 0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 9 TURN ON ENERGY PEAK FORWARD Fig.9 Turn-on energy vs peak forward gate current 7/19 DG406BP25 Turn-on energy loss EON - (mJ) 1125 Conditions: 1000 Tj = 125˚C, IFGM = 30A, CS = 1.0µF, RS = 10 Ohms, 875 dI /dt = 300A/µs, T dIF/dt = 30A/µs 750 VD = 2000V VD = 1500V 625 VD = 1000V 500 375 250 125 0 0 250 500 750 1000 On-state current IT - (A) 1250 2500 Fig.10 Turn-on energy vs on-state current 1250 Conditions: Tj = 125˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 1500 VD = 2000V 1000 VD = 1500V VD = 1000V 500 0 0 20 40 60 Peak forward gate current IFGM - (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 2000 Conditions: IT = 1000A, Tj = 125˚C, CS = 1.0µF 1000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/µs 750 VD = 2000V 500 VD = 1500V 250 VD = 1000V 80 0 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) FIG 12 TURN ON ENERGY RATE OF Fig.12 Turn-on energy vs rate of rise of on-state current DG406BP25 Conditions: Tj = 125˚C, IFGM = 30A, CS = 1.0µF, VD = 2000V, RS = 10 Ohms, dIT/dt = 300A/µs tr 3.0 2.0 td 1.0 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.13 Delay time & rise time vs turn-on current 5.0 Turn-on delay time and rise time - (µs) Turn-on delay and rise time - (µs) 4.0 Conditions: Tj = 125˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms, dI/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 2000V 4.0 3.0 tr 2.0 td 1.0 0 0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 14 DELAY TIME & RISE TIME PEAK FORWARD Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG406BP25 Turn-off energy loss EOFF - (mJ) 2000 Conditions: Tj = 25˚C, CS = 1.0µF, dIGQ/dt = 30A/µs 1500 VDRM 0.75x VDRM 1000 0.5x VDRM 500 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Turn-off energy per pulse EOFF - (mJ) Fig.15 Turn-off energy vs on-state current 2000 Conditions: Tj = 25˚C, CS = 1.0µF, IT = 1000A VDRM 1500 0.75x VDRM 1000 0.5x VDRM 500 0 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 16 TURN OFF ENERGY RATE OF RISE OF Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 60 DG406BP25 2500 Conditions: Tj = 125˚C, CS = 1.0µF, dIGQ/dt = 30A/µs VDRM 1500 0.75x VDRM 1000 0.5x VDRM 500 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 17 TURN OFF ENERGY ON STATE CURRENT 1500 Fig.17 Turn-off energy vs on-state current 2500 Turn-off energy per pulse EOFF - (mJ) Turn-off energy loss EOFF - (mJ) 2000 Conditions: 2000 Tj = 125˚C, CS = 1.0µF, IT = 1000A VDRM 0.75x VDRM 1500 0.5x VDRM 1000 500 10 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 18 TURN OFF ENERGY LOSS RATE OF RISE OF Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG406BP25 2500 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125˚C, VDM = VDRM, dIGQ/dt = 30A/µs CS = 1.0µF CS = 1.5µF 2000 CS = 2.0µF 1500 CS = 0.5µF 1000 500 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 19 TURN OFF ENERGY ON STATE CURRENT 1500 Fig.19 Turn-off energy vs on-state current 2.0 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C Gate fall tgf - (µs) 1.5 Tj = 25˚C 1.0 0.5 0 0 250 500 750 1000 On-state current IT - (A) Fig.20 Gate fall time vs on-state current 12/19 1250 1500 DG406BP25 Gate storage time tgs - (µs) 25 Conditions: CS = 1.0µF, IT = 1000A 20 15 Tj = 125˚C 10 Tj = 25˚C 5 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 21 GATE STORAGE TIME RATE OF RISE OF 60 Fig.21 Gate storage time vs rate of rise of reverse gate current Gate storage fall tgf - (µs) 2.0 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 1.5 Tj = 25˚C 1.0 0.5 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 22 GATE FALL TIME ON STATE CURRENT 1500 Fig.22 Gate fall time vs on-state current 13/19 DG406BP25 2.00 Conditions: CS = 1.0µF, IT = 1000A Gate fall time tgf - (µs) 1.75 1.50 Tj = 125˚C 1.25 Tj = 25˚C 1.00 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 23 GATE FALL TIME RATE OF RISE OF 60 Fig.23 Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 500 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 400 Tj = 25˚C 300 200 100 0 250 500 750 1000 Turn-off current IT - (A) 1250 Fig.24 Peak reverse gate current vs turn-off current 14/19 1500 DG406BP25 500 Conditions: CS = 1.0µF, IT = 1000A Tj = 125˚C Peak reverse gate current IGQM - (A) 450 Tj = 25˚C 400 350 300 250 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 60 Fig.25 Peak reverse gate current vs rate of rise of reversegate current Total turn-off charge QGQ - (µC) 4000 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 3000 Tj = 25˚C 2000 1000 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.26 Turn-off gate charge vs on-state current 15/19 DG406BP25 4000 Conditions: CS = 1.0µF, IT = 1000A Turn-off gate charge QGQ - (µC) 3500 3000 Tj = 125˚C 2500 2000 Tj = 25˚C 1500 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 60 Rate of rise of off-state voltage dV/dt - (V/µs) Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 VD = 1250V 500 0 0.1 Tj = 125˚C VD = 1650V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG406BP25 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 1000A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 10µs IGQM = 420A diGQ/dt = 30A/µs QGQ = 3000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG406BP25 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep Auxiliary cathode 20˚ Gate Cathode 18 nom 27.0 25.5 Ø51 nom Ø38 nom Ø38 nom Ø56 max Ø57.5 max Ø63.5 max Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: P 18/19 Anode http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor TECHNICAL DOCUMENTATION – NOT FOR RESALE. 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