BDX67, A, B, C NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC(RMS) IC Collector Current ICM IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature @ TC = 25° COMSET SEMICONDUCTORS Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 100 120 80 100 120 140 V V 5.0 V 16 A 20 0.25 A 150 Watts W/°C -55 to +200 °C 1/5 BDX67, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX67 BDX67A BDX67B BDX67C Value Unit 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO IEBO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current IC=0.1 A, L=25mH Min Typ Max BDX67 60 - - BDX67A 80 - - BDX67B 100 - - BDX67C 120 - - VCE=30 V BDX67 - - VCE=40 V BDX67A - - VCE=50 V BDX67B - - VCE=60 V BDX67C BDX67 BDX67A BDX67B BDX67C - - - Unit V 3 mA - 5.0 mA - - 1 TCASE=200°C, VCB=40 V - - 5 TCASE=25°C, VCB=80 V - - 1 - - 5 VBE=5 V TCASE=25°C, VCB=60 V BDX67 ICBO Collector-Base Cutoff Current mA BDX67A TCASE=200°C, VCB=50 V COMSET SEMICONDUCTORS 2/5 BDX67, A, B, C Symbol Ratings Typ Max - - 1 TCASE=200°C, VCB=60 V - - 5 TCASE=25°C, VCB=120 V - - 1 - - 5 1000 - 5200 4000 - - - - 2 V - - 2,5 V - 2,5 - V - 300 - pF - 1 - Test Condition(s) TCASE=25°C, VCB=100 V Min Unit BDX67B ICBO Collector-Base Cutoff Current mA BDX67C TCASE=200°C, VCB=70 V hFE DC Current Gain VCE=3 V, IC=1 A VCE=3 V, IC=10 A VCE=3 V, IC=16 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mA VBE Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A VF Diode forward voltage IF=10 A Cc IE=0 A, VCB=10V ton Switching characteristics VCC=12V, IC=-10 A IB1=- IB2=0.04 A toff fhfe VCE=-3 V, IC=-5 A BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C µs - 3.5 - - 50 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 3/5 kHz BDX67, A, B, C MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/5 BDX67, A, B, C COMSET SEMICONDUCTORS 5/5