Comset BDX67 Npn silicon darlington Datasheet

BDX67, A, B, C
NPN SILICON DARLINGTONS
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC(RMS)
IC
Collector Current
ICM
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
TS
Storage Temperature
@ TC = 25°
COMSET SEMICONDUCTORS
Value
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
Unit
60
80
100
120
80
100
120
140
V
V
5.0
V
16
A
20
0.25
A
150
Watts
W/°C
-55 to +200
°C
1/5
BDX67, A, B, C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
BDX67
BDX67A
BDX67B
BDX67C
Value
Unit
1.17
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
ICEO
IEBO
Ratings
Test Condition(s)
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Emitter Cutoff Current
IC=0.1 A, L=25mH
Min Typ Max
BDX67
60
-
-
BDX67A
80
-
-
BDX67B
100
-
-
BDX67C
120
-
-
VCE=30 V
BDX67
-
-
VCE=40 V
BDX67A
-
-
VCE=50 V
BDX67B
-
-
VCE=60 V
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
-
-
-
Unit
V
3
mA
-
5.0
mA
-
-
1
TCASE=200°C, VCB=40 V
-
-
5
TCASE=25°C, VCB=80 V
-
-
1
-
-
5
VBE=5 V
TCASE=25°C, VCB=60 V
BDX67
ICBO
Collector-Base Cutoff
Current
mA
BDX67A
TCASE=200°C, VCB=50 V
COMSET SEMICONDUCTORS
2/5
BDX67, A, B, C
Symbol
Ratings
Typ
Max
-
-
1
TCASE=200°C, VCB=60 V
-
-
5
TCASE=25°C, VCB=120 V
-
-
1
-
-
5
1000
-
5200
4000
-
-
-
-
2
V
-
-
2,5
V
-
2,5
-
V
-
300
-
pF
-
1
-
Test Condition(s)
TCASE=25°C, VCB=100 V
Min
Unit
BDX67B
ICBO
Collector-Base Cutoff
Current
mA
BDX67C
TCASE=200°C, VCB=70 V
hFE
DC Current Gain
VCE=3 V, IC=1 A
VCE=3 V, IC=10 A
VCE=3 V, IC=16 A
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=40 mA
VBE
Base-Emitter Voltage(1&2)
VCE=3 V, IC=10 A
VF
Diode forward voltage
IF=10 A
Cc
IE=0 A, VCB=10V
ton
Switching characteristics
VCC=12V, IC=-10 A
IB1=- IB2=0.04 A
toff
fhfe
VCE=-3 V, IC=-5 A
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
µs
-
3.5
-
-
50
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
kHz
BDX67, A, B, C
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice
COMSET SEMICONDUCTORS
4/5
BDX67, A, B, C
COMSET SEMICONDUCTORS
5/5
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