Freescale ATC100B4R7BT500XT Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S9102N
Rev. 0, 2/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
23.1
36.4
6.3
--35.5
940 MHz
23.1
36.4
6.2
--36.1
960 MHz
22.8
36.6
6.1
--35.8
MRF8S9102NR3
865--960 MHz, 28 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
22.9
35.4
6.4
--34.7
880 MHz
23.0
35.5
6.2
--35.1
895 MHz
22.8
35.6
6.0
--35.7
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9102NR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 28 W CW, 28 Vdc, IDQ = 750 mA, 880 MHz
Case Temperature 80°C, 100 W CW, 28 Vdc, IDQ = 750 mA, 880 MHz
RθJC
Unit
°C/W
0.63
0.58
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mAdc)
VGS(Q)
—
3.1
—
Vdc
Fixture Gate Quiescent Voltage (4)
(VDD = 28 Vdc, ID = 750 mAdc, Measured in Functional Test)
VGG(Q)
4.6
6.2
7.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.7 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MRF8S9102NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
21.5
23.1
24.0
dB
Drain Efficiency
ηD
34.0
36.4
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
6.0
6.3
—
dB
ACPR
—
--35.5
--32.5
dBc
IRL
—
--14
--9
dB
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
23.1
36.4
6.3
--35.5
--14
940 MHz
23.1
36.4
6.2
--36.1
--22
960 MHz
22.8
36.6
6.1
--35.8
--17
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
100
—
—
20
—
80
—
W
IMD Symmetry @ 82 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and
Lower Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 28 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.02
—
dB/°C
∆P1dB
—
0.004
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MHz
Typical Broadband Performance — 880 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz
22.9
35.4
6.4
--34.7
--15
880 MHz
23.0
35.5
6.2
--35.1
--23
895 MHz
22.8
35.6
6.0
--35.7
--19
1. Part internally matched both on input and output.
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
3
R1
C12
C2
R2
C3
C9
C4
C10
C5
R3
CUT OUT AREA
C8
C11
C14
C6
C15
C16
C7
C1
C13
MRF8S9102N
Rev. 0
Figure 1. MRF8S9102NR3 Test Circuit Component Layout
Table 6. MRF8S9102NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
220 μF, 63 V Electrolytic Capacitors
222212018221
Vishay
C3, C4, C5, C6, C7
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C8, C14, C15
3.0 pF Chip Capacitors
ATC100B3R0BT500XT
ATC
C9, C12, C13, C16
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C10
4.3 pF Chip Capacitor
ATC100B4R3BT500XT
ATC
C11
4.7 pF Chip Capacitor
ATC100B4R7BT500XT
ATC
R1, R2
1 KΩ, 1/8 W Chip Resistors
WCR08051KFI
Welwyn
R3
10 Ω, 1/4 W Chip Resistor
9C12063A10R0FKHFT
Yageo
PCB
0.020″, εr = 3.5
RO4350
Rogers
MRF8S9102NR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
34
ηD
23
22
21
Gps
32
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
--36
0
--36.5
--5
20
--37
PARC
19
--37.5
ACPR
18
17
820
--38
IRL
840
860
880
900
920
940
--38.5
980
960
--10
--15
--20
--25
--0.5
--0.8
--1.1
--1.4
--1.7
PARC (dB)
36
24
IRL, INPUT RETURN LOSS (dB)
38
25
Gps, POWER GAIN (dB)
ηD, DRAIN
EFFICIENCY (%)
40
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 750 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
26
ACPR (dBc)
27
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
--10
VDD = 28 Vdc, Pout = 82 W (PEP), IDQ = 750 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--U
IM7--L
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
22.5
22
21.5
21
VDD = 28 Vdc, IDQ = 750 mA, f = 940 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
1 PAR = 7.5 dB @ 0.01% Probability on CCDF
ηD
ACPR
0
--20
50
--25
40
--1
30
Gps
--1 dB = 25 W
--2
20
--3 dB = 48 W
--2 dB = 35 W
--3
--4
60
PARC
10
20
30
40
50
--30
--35
ACPR (dBc)
23
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
23.5
2
ηD, DRAIN EFFICIENCY (%)
24
--40
10
--45
0
--50
60
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
940 MHz
Gps, POWER GAIN (dB)
23
920 MHz
960 MHz
VDD = 28 Vdc, IDQ = 750 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
22
21
50
--10
30
ACPR
920 MHz
920 MHz
19
0
40
960 MHz
940 MHz
20
60
ηD
940 MHz
20
10
--20
--30
--40
ACPR (dBc)
Gps
ηD, DRAIN EFFICIENCY (%)
24
--50
960 MHz
0
100
18
1
10
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
0
25
--4
Gain
--8
--12
15
IRL (dB)
GAIN (dB)
20
--16
10
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 750 mA
5
0
600
700
800
900
--20
1000
1100
1200
1300
--24
1400
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9102NR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
1.93 -- j3.20
3.46 -- j1.73
840
2.05 -- j3.14
3.48 -- j1.48
860
2.13 -- j3.13
3.52 -- j1.26
880
2.17 -- j3.14
3.58 -- j1.06
900
2.21 -- j3.14
3.70 -- j0.87
920
2.23 -- j3.19
3.86 -- j0.73
940
2.20 -- j3.24
4.04 -- j0.63
960
2.14 -- j3.27
4.26 -- j0.56
980
2.04 -- j3.29
4.50 -- j0.56
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
57
Ideal
Pout, OUTPUT POWER (dBm)
56
55
54
920 MHz
53
Actual
52
920 MHz
51
960 MHz
50
49
960 MHz
940 MHz
48
940 MHz
47
46
25
26
27
28
29
30
31
32
33
34
35
36
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
158
52.0
195
52.9
940
162
52.1
195
52.9
960
158
52.0
195
52.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
1.60 -- j2.77
8.80 -- j0.18
940
P1dB
2.03 -- j3.36
9.34 + j1.58
960
P1dB
2.33 -- j3.55
8.42 + j3.05
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9102NR3
8
RF Device Data
Freescale Semiconductor
R1
C13
C2
R2
C9
C3
C4
C10
C8
C5
R3
C14
C15
C16
CUT OUT AREA
C17
C11
C6
C7
C1
C12
MRF8S9102N
Rev. 0
Figure 11. MRF8S9102NR3 Test Circuit Component Layout — 865--895 MHz
Table 7. MRF8S9102NR3 Test Circuit Component Designations and Values — 865--895 MHz
Part
Description
Part Number
Manufacturer
C1, C2
220 μF, 63 V Electrolytic Capacitors
222212018221
Vishay
C3, C4, C5, C6, C7
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C8
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C9, C12, C13, C16
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C10, C11
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C14, C15
3.9 pF Chip Capacitors
ATC100B3R9BT500XT
ATC
C17
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
R1, R2
1 KΩ, 1/8 W Chip Resistors
WCR08051KFI
Welwyn
R3
10 Ω, 1/4 W Chip Resistor
9C12063A10R0FKHFT
Yageo
PCB
0.020″, εr = 3.5
RO4350
Rogers
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
9
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
ηD
23
Gps
22
21
20
18
0
--32
--5
--35
IRL
840
--31
--34
ACPR
17
820
32
--33
PARC
19
36
34
860
880
--10
--15
--20
--36
900
920
940
960
--25
980
0
--0.5
--1
--1.5
PARC (dB)
24
38
IRL, INPUT RETURN LOSS (dB)
25
Gps, POWER GAIN (dB)
40
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 750 mA
Single--Carrier W--CDMA
26
ACPR (dBc)
27
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 865--895 MHz
--2
--2.5
f, FREQUENCY (MHz)
Figure 12. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
Gps, POWER GAIN (dB)
23
865 MHz
895 MHz 880 MHz
VDD = 28 Vdc, IDQ = 750 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
22
21
20
1
0
50
--10
30
ACPR
880 MHz
865 MHz
19
60
40
895 MHz
18
ηD
895 MHz
865 MHz
880 MHz
20
10
0
100
10
--20
--30
--40
ACPR (dBc)
Gps
ηD, DRAIN EFFICIENCY (%)
24
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 13. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
30
--4
Gain
20
--8
15
--12
IRL
10
0
700
--16
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 750 mA
5
750
800
850
900
950
IRL (dB)
GAIN (dB)
25
1000
1050
--20
--24
1100
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
MRF8S9102NR3
10
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
0.95 -- j1.97
3.44 -- j2.01
840
1.02 -- j1.88
3.44 -- j1.87
860
1.09 -- j1.83
3.48 -- j1.73
880
1.10 -- j1.74
3.53 -- j1.60
900
1.13 -- j1.74
3.63 -- j1.65
920
1.18 -- j1.71
3.73 -- j1.51
940
1.12 -- j1.75
3.81 -- j1.55
960
1.06 -- j1.72
3.88 -- j1.60
980
1.02 -- j1.71
3.98 -- j1.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance — 865--895 MHz
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF8S9102NR3
12
RF Device Data
Freescale Semiconductor
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
13
MRF8S9102NR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2011
Description
• Initial Release of Data Sheet
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
15
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MRF8S9102NR3
Document Number: MRF8S9102N
Rev. 0, 2/2011
16
RF Device Data
Freescale Semiconductor