CALOGIC J174 P-channel jfet switch Datasheet

P-Channel JFET Switch
CORPORATION
J174 – J177 / SST174 – SST177
FEATURES
• Low Insertion Loss
• No Offset or Error Generated By Closed Switch
Resistive
- Purely
- High Isolation Resistance From Driver
• Short Sample and Hold Aperture Time
• Fast Switching
APPLICATIONS
Switches
• Analog
• Choppers
• Commutators
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . . 300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
PIN CONFIGURATION
ORDERING INFORMATION
Part
SOT-23
G
TO-92
D
S
S
D G
5508
PRODUCT MARKING (SOT-23)
SST174
P04
SST175
P05
SST176
P06
SST177
P07
Package
Temperature Range
J174-J177
Plastic TO-92
-55oC to +135oC
SST174-SST177
Plastic SOT-23
-55oC to +135oC
For Sorted Chips in Carriers see 2N5114 series.
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
J174
SYMBOL PARAMETER
J175
J176
J177
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
Gate Reverse
Current
(Note 1)
VGS(off)
Gate Source
Cutoff Voltage
1
5
10
1
3
6
1
1
4
1
0.8
nA
2.25
VDS = 0, VGS = 20V
VDS = -15V, ID = -10nA
V
BVGSS
Gate Source
Breakdown
Voltage
30
30
IDSS
Drain
Saturation
Current
(Note 2)
-20
-135 -7
ID(off)
Drain Cutoff
Current
(Note 1)
-1
rDS(on)
Drain-Source
ON Resistance
85
Cdg(off)
Drain-Gate
OFF
Capacitance
5.5
Csg(off)
Source-Gate
OFF
Capacitance
5.5
5.5
5.5
5.5
Cdg(on)
+ Csg(on)
Drain-Gate
Plus Source
Gate ON
Capacitance
32
32
32
32
VDS = VGS = 0
td(on)
Turn On Delay
Time
2
5
15
20
tr
Rise Time
5
10
20
25
td(off)
Turn Off Delay
Time
5
10
15
20
tf
Fall Time
10
20
20
25
Switching Time Test Conditions
(Note 3)
J174
J175
J176
VDD
-10V
-6V
-6V
VGS(off) 12V
8V
3V
RL
560Ω 12kΩ 5.6kΩ
VGS(on) 0V
0V
0V
30
30
-2
-35 -1.5
-20
mA
VDS = -15V, VGS = 0
-1
-1
-1
nA
VDS = -15V, VGS = 10V
125
250
300
Ω
VGS = 0, VDS = -0.1V
-70
5.5
5.5
VDS = 0, IG = 1µA
5.5
VDS = 0,
VGS = 10V
o
NOTES: 1. Approximately doubles for every 10 C increase in TA.
2. Pulse test duration -300µs; duty cycle ≤3%.
3. For design reference only, not 100% tested.
f = 1MHz (Note 3)
pF
ns
J177
-6V
3V
10kΩ
0V
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