ES5AB thru ES5JB Pb Free Plating Product ® Pb ES5AB thru ES5JB 5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes FEATURE OUTLINE Glass passivated chip junction The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Cathode Band Unit:inch(millimeter) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) MECHANICAL DATA Case:SMB/DO-214AA Package Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode band Mounting Position: Any Weight: 0.11 gram approximately 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) APPLICATION LED SMPS/Industrial power supply HID ballast stabilizer Telecommunication SMPS/LED street lamp SMB/DO-214AA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SYMBOLS ES5AB ES5BB ES5CBES5DB ES5EB ES5GB ES5JB Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance Operating junction and storage temperature range VRRM VRMS VDC 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 UNITS VOLTS VOLTS VOLTS I(AV) 5.0 Amps IFSM 125 Amps VF 0.95 1.3 1.7 Volts IR 10.0 300.0 trr 35 ns 58.0 47.0 -65 to +150 pF C/W C CJ RQJA TJ,TSTG MA Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. REV.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ES5AB thru ES5JB ® G FIG. 1- FORWARD CURRENT DERATING CURVE 5.0 4.0 3.0 Single Phase Half Wave 60Hz Resistive or inductive Load 2.0 1.0 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES ES5AB thru ES5JB FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 60 30 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C ES5AA-ES5DA ES5EA-ES5GA ES5JA 04350 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 -./012 B`R<WHT]-F/:aE b]`-c2c2RW 1,000 100 10 TJ=100 C 1 0.01 0 100 10 TJ=25 C TRANSIENT THERMAL IMPEDANCE, C/W 200 10 REVERSE VOLTAGE,VOLTS REV.04 © 2006 Thinki Semiconductor Co.,Ltd. 40 60 80 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 1 1.0 20 PERCENTAGE OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=25 C 0.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 100 NUMBER OF CYCLES AT 60 Hz 0.1 1 10 100 100 t,PULSE DURATION,sec. Page 2/2 http://www.thinkisemi.com/