DONGGUAN NANJING ELECTRONICS LTD., SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89-3L FEATURE 1 2 3 Low speed switching 1. BASE MARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W RӨJA Thermal Resistance, Junction to Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V VCE= -5V, IC=-0.1A fT Transition frequency 60 400 MHz 50 f =10MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 C,Dec,2013 Typical Characteristics B772 Static Characteristic -1.8 -7.5mA COMMON EMITTER Ta=25℃ -1.6 —— IC COMMON EMITTER VCE= -2V -6.75mA -1.2 -4.5mA -1.0 -3.75mA -5.25mA -2.25mA -0.6 -1.5mA -0.4 -0.2 DC CURRENT GAIN 1000 -3.0mA -0.8 hFE (A) IC -6.0mA -1.4 COLLECTOR CURRENT hFE 10000 Ta=100℃ Ta=25℃ 100 IB=-0.75mA -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1000 -3.0 -3.5 -1 -10 -100 COLLECTOR CURRENT VCE (V) VBEsat —— IC IC -1000 -3000 -1000 -3000 (mA) IC -1500 β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 -100 Ta=100 ℃ Ta=25℃ -10 -1 -1 -10 -100 COLLECTOR CURRENT IC -3000 —— -1000 IC Ta=25℃ Ta=100 ℃ -300 -3000 -1 (mA) -10 -100 COLLECTOR CURREMT VBE fT 200 —— IC (mA) IC (MHz) TRANSITION FREQUENCY -10 T= a 25 ℃ T a =1 00 ℃ -100 100 fT (mA) IC -600 COMMON EMITTER VCE= -2V -1000 COLLECTOR CURRENT -900 -1 COMMON EMITTER VCE=-5V Ta=25℃ -0.1 -300 -400 -500 -600 -700 -800 -900 -1000 -1100-1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (W) 0.6 —— 10 -4.23 -10 COLLECTOR CURRENT -100 IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 C,Dec,2013