CDIL BUX84A Npn plastic power transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
BUX84, 84A
BUX84, BUX84A
NPN PLASTIC POWER TRANSISTORS
High Voltage, High Speed Power Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
4
1
2
C
E
F
DIM
M IN.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
14.42
9.63
3.56
K
All dim insions in m m .
L
N
O
1 2 3
O
A
H
B
J
D
G
M
3
M A X.
16.51
10.67
4.83
0.90
1.15
1.40
3.75
3.88
2.29
2.79
2.54
3.43
0.56
12.70 14.73
2.80
4.07
2.03
2.92
31.24
DE G 7
ABSOLUTE MAXIMUM RATINGS
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 0.3A; IB = 30 mA
D.C. current gain
IC = 0.1 A; VCE = 5 V
VCES
VCEO
IC
Ptot
Tj
84
max. 800
max. 400
max.
max.
max.
84A
800 V
400 V
2.0
A
40
W
150
°C
VCEsat
max. 1.5
hFE
min.
30
84
max. 800
max. 400
max.
84A
800 V
400 V
5.0
V
0.8 V
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Continental Device India Limited
VCES
VCEO
VEBO
Data Sheet
Page 1 of 3
BUX84, BUX84A
Collector current
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
IC
ICM
IB
Ptot
Tj
T stg
max.
max.
max.
max.
max.
THERMAL RESISTANCE
From junction to case
Rth j–c
=
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
VBE = 0; VCE = Rated VCES
VBE = 0; VCE = Rated VCES; TC = 125°C
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; VBE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 0.3 A; IB = 30 mA
IC = 1 A; IB = 0.2 A
2.0
3.0
0.75
40
150
–65 to +150
3.125
84
A
A
A
W
ºC
ºC
°C/W
84A
ICES
ICES
max.
max.
0.2
1.5
mA
mA
IEBO
max.
1.0
mA
VCEO(sus)* min.
VCES
min.
VEBO
min.
400
800
5.0
V
V
V
0.8 V
1.0 V
V
VCEsat*
VCEsat*
VBEsat*
max. 1.5
max. 3.0
max.
1.1
D.C. current gain
IC = 0.1 A; VCE = 5 V
Transition frequency f = 1 MHz
IC = 0.2 A; VCE = 10 V
hFE*
min.
30
fT
typ.
20
MHz
Switching time
IC = 1A; VCC = 250V
IB = 0.2A; –IB = 0.4A
Turn on time
Storage time
Fall time
ton
ts
tf
max
max.
max.
0.5
3.5
1.4
µs
µs
µs
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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