Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BUX84, 84A BUX84, BUX84A NPN PLASTIC POWER TRANSISTORS High Voltage, High Speed Power Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 K All dim insions in m m . L N O 1 2 3 O A H B J D G M 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.3A; IB = 30 mA D.C. current gain IC = 0.1 A; VCE = 5 V VCES VCEO IC Ptot Tj 84 max. 800 max. 400 max. max. max. 84A 800 V 400 V 2.0 A 40 W 150 °C VCEsat max. 1.5 hFE min. 30 84 max. 800 max. 400 max. 84A 800 V 400 V 5.0 V 0.8 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-emitter voltage (VBE = 0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Continental Device India Limited VCES VCEO VEBO Data Sheet Page 1 of 3 BUX84, BUX84A Collector current Collector current (Peak value) Base current Total power dissipation up to TC = 25°C Junction temperature Storage temperature IC ICM IB Ptot Tj T stg max. max. max. max. max. THERMAL RESISTANCE From junction to case Rth j–c = CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current VBE = 0; VCE = Rated VCES VBE = 0; VCE = Rated VCES; TC = 125°C Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; VBE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 0.3 A; IB = 30 mA IC = 1 A; IB = 0.2 A 2.0 3.0 0.75 40 150 –65 to +150 3.125 84 A A A W ºC ºC °C/W 84A ICES ICES max. max. 0.2 1.5 mA mA IEBO max. 1.0 mA VCEO(sus)* min. VCES min. VEBO min. 400 800 5.0 V V V 0.8 V 1.0 V V VCEsat* VCEsat* VBEsat* max. 1.5 max. 3.0 max. 1.1 D.C. current gain IC = 0.1 A; VCE = 5 V Transition frequency f = 1 MHz IC = 0.2 A; VCE = 10 V hFE* min. 30 fT typ. 20 MHz Switching time IC = 1A; VCC = 250V IB = 0.2A; –IB = 0.4A Turn on time Storage time Fall time ton ts tf max max. max. 0.5 3.5 1.4 µs µs µs * Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%. Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3