DMNH6042SK3Q Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TC = +25°C Rated to +175°C – Ideal for High Ambient Temperature Environments 50mΩ @ VGS = 10V 25A 65mΩ @ VGS = 4.5V 22A 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) BVDSS 60V Features Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported up by a PPAP and is ideal for use in: Driving Solenoids Driving Relays Mechanical Data Power Management Functions Case: TO252 (DPAK) Case Material: Molded Plastic, ―Green‖ Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMNH6042SK3Q-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H6042S YYWW DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 = Manufacturer’s Marking H6042S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6042SK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 8) VGS = 10V TC = +25°C TC = +70°C Steady State Value 60 ±20 25 17 40 25 3.5 65 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 8) Avalanche Current (Note 9) L = 10mH Avalanche Energy (Note 9) L = 10mH IDM IS IAS EAS Units V V A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 2 73 36 3.5 43 21 3.2 -55 to +175 RθJA Total Power Dissipation (Note 7) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 30 45 0.8 3.0 50 65 1.2 V Static Drain-Source On-Resistance 1.0 — — — mΩ VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 6A VGS = 0V, IS = 2.6A tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 584 83 24 3.8 4.2 8.8 1.8 1.8 3.4 1.9 10.1 4.5 12.9 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 5.4 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd V Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 44V, ID = 5.2A VGS = 10V, VDS = 30V, RG = 6Ω, ID = 1A IF = 2.6A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6042SK3Q 30.0 30 VGS = 8.0V VGS = 5.0V VDS = 5V 25 20.0 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 4.5V 15.0 VGS = 4.0V 10.0 20 15 10 TJ = 175oC TJ = 150oC TJ = 125oC TJ = 85oC 5 5.0 VGS = 3.3V 0 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.08 0.07 0.06 VGS = 4.5V 0.05 0.04 0.03 VGS = 10V 0.02 0.01 0 0 1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.09 TJ = 175oC 0.07 0.06 TJ = 0.05 150oC TJ = 125oC TJ = 85oC 0.04 0.03 TJ = 25oC 0.02 TJ = -55oC ID = 5.1A 0.07 0.06 0.05 0.04 0.03 ID = 4.4A 0.02 0.01 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 6 0.08 2 0.08 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.1 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TJ = 25oC TJ = -55oC 2.4 2.2 VGS = 10V, ID = 5.1A 2 1.8 1.6 1.4 1.2 1 VGS = 4.5V, ID = 4.4A 0.8 0.6 0.4 0.01 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature August 2016 © Diodes Incorporated DMNH6042SK3Q 2.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.1 0.09 0.08 VGS = 4.5V, ID = 4.4A 0.07 0.06 0.05 0.04 0.03 VGS = 10V, ID = 5.1A 0.02 2.6 2.4 2.2 2 1.8 ID = 250µA 1.6 1.4 1.2 1 0.01 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 30 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature 1000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) ID = 1mA 20 TA = 175oC 15 TA = 150oC TA = 125oC 10 TA = 85oC TA = 25oC 5 TA = -55oC Ciss Coss 100 Crss 10 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 10 PW = 10µs RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 VDS = 44V, ID = 5.2A 10 PW = 1s PW = 100ms PW = 10ms 1 PW = 1ms TJ(Max) = 175℃ TC = 25℃ PW = 100µs Single Pulse DUT on Infinite Heatsink VGS = 10V 2 0 0.1 0 2 4 6 8 10 Qg (nC) Figure 11. Gate Charge DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMNH6042SK3Q 1 D=0.9 D=0.7 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJC (t) = r(t) * RθJC RθJC = 3.2℃/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6042SK3Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6042SK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMNH6042SK3Q Document number: DS38902 Rev. 2 - 2 7 of 7 www.diodes.com August 2016 © Diodes Incorporated