MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 5.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection Top View Is Shown With Diode Junction Up Cathode Description M/A-COM's MA4GP907 is a Gallium Arsenide Flip-Chip PIN diode.These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps ) and 2 nS switching characteristics. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection.The protective coatings prevent damage to the junction and the anode airbridge during handling. Applications The 25 fF capacitance of the MA4GP907 allows use through mmwave switch and switched phase shifter applications. This diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. For surface mount assembly, the low capacitance of the MA4GP907 makes it ideal for use in microwave multithrow switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. Ordering Information Part Number Packaging MA4GP907 Die in Carrier MA4GP907-T Tape/Reel MA4GP907-W Wafer on Frame 1 GaAs Flip-Chip PIN Diodes MA4GP907 V5.00 Electrical Specifications and RF Data @TA = 25 °C Parameters and Test Conditions Symbol Units 1 MHz & DC Specifications Min. Typ. Max. 0.025 0.030 Total Capacitance at -10 V Ct pF Forward Resistance at +10mA Rs Ohms Forward Voltage at +10mA Vf Volts 1.33 1.45 Reverse Breakdown Voltage at -10uA3 Vb Volts -50 -45 Trise Tfall nS Switching Speed (10 to 90% RF Voltage)4 & (90 to 10% RF Voltage)4 10 GHz Reference Data 1,2 Min. Typ. Max. 0.025 4.2 2 Notes: 1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz. 2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz. 3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating. 4. Switching speed is measured between 10% and 90% or 90% to 10% RF Voltage for a Single Series Mounted Diode. Driver delay is Not included. Single Series Diode Insertion Loss vs Frequency I. Loss @5mA I. Loss @15mA I. Loss @50mA Insertion Loss (dB) 0.0 -0.2 -0.4 -0.6 -0.8 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 GaAs Flip-Chip PIN Diodes MA4GP907 V5.00 Single Series Diode Return Loss vs Frequency R. Loss @5mA R. Loss @15mA R. Loss @50mA 0.0 -5.0 Return Loss (dB) -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Single Series Diode Isolation vs Frequency Isolation @ -10V Isolation @ 0V 0.0 -5.0 Isolation (dB) -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz ) M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. 3 n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 GaAs Flip-Chip PIN Diodes MA4GP907 V 5.00 Device Installation Procedures The following guidelines should be observed to avoid damaging GaAs Flip-Chips. Cleanliness These devices should be handled in a clean environment. Do Not attempt to clean die After installation. Static Sensitivity Gallium arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. These devices are rated Class 0, (0-199 V) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment. General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil. Assembly Requirements Using Electrically Conductive Ag Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silkscreened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90 °C to 150 °C per manufacturer’s schedule. For extended cure times > 30 minutes, temperatures must be below 200 °C. Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or 80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be < 300 °C for < 10 sec. Circuit Mounting Dimensions (Inches) 0.013 Absolute Maximum Ratings5 Parameter Maximum Ratings Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Dissipated RF & DC Power 50 mW RF C.W. Incident Power Mounting Temperature 0.012 (2) PL + 23 dBm C.W. +300 °C for 10 seconds 0.008 (2) PL 5. Exceeding any of these values may result in permanent damage Ordering Information Part Number Package MA4GP907 Die in Carrier MA4GP907-T Tape and Reel MA4GP907-W Wafer on Frame 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020