WJ ECP103G 1 watt, high linearity ingap hbt amplifier Datasheet

ECP103
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
x 10 dB Gain @ 2450 MHz
x 9 dB Gain @ 2600 MHz
x Single Positive Supply (+5V)
x Available in SOIC-8 or 16pin
4mm QFN package
Applications
x W-LAN
x RFID
x DMB
x Fixed Wireless
The ECP103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP103 to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
N/C
N/C
N/C
15
14
13
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
9 N/C
N/C 4
5
6
7
8
N/C
x +46 dBm Output IP3
16
Vref 1
N/C
x +30.5 dBm P1dB
The ECP103 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +30.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
Vbias
x 2300 - 2700 MHz
Functional Diagram
N/C
Product Description
N/C
Product Features
ECP103D
Vref 1
8
Vbias
N/C 2
7
RF OUT
RF IN 3
6
RF OUT
N/C 4
5
N/C
ECP103G
Specifications (1)
Parameter
Typical Performance (4)
Units Min
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Operating Current Range , Icc (3)
Device Voltage, Vcc
MHz
MHz
dB
dB
dB
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
Typ Max
2300
400
Parameter
2700
2450
10
18
8
+30.5
+46
6.3
2600
9
+30
+45
450
5
Units
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias (3)
Typical
MHz
dB
dB
dB
dBm
dBm
2450
10
15
8
30.5
46
dBm
22.5
dB
7
2600
9
15
8
30.0
45
7
7
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
500
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+8 V
900 mA
5W
Ordering Information
Part No.
ECP103D
ECP103G
ECP103D-PCB2450
ECP103D-PCB2650
ECP103G-PCB2450
ECP103G-PCB2650
Description
1 Watt InGaP HBT Amplifier (16p 4mm Pkg)
1 Watt InGaP HBT Amplifier (Soic-8 Pkg)
2450 MHz Evaluation Board
2600 MHz Evaluation Board
2450 MHz Evaluation Board
2600 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
October 2004 Rev 1
ECP103
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Typical Device Data – ECP103G (Soic-8 Package)
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads)
S22
0.
4
0.8
6
0.
0
3.
25
3.
0
0
4.
0
4.
0
5.
0.
2
20
5.0
0.2
10.0
5
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
10
0.2
15
10.0
10.0
-10.
0
-10.
0
2
-0.
2
-0.
-4
.0
-5.
0
.0
-2
.6
Swp Min
0.05GHz
-1.0
Swp Min
0.05GHz
-0.8
2.5
4
-0
2
.
-0
.0
-2
1
1.5
Frequency (GHz)
-0.8
0.5
-0
.6
0
.4
-1.0
-0
-3
.0
-10
0
-5
-3
.
0
-4
.0
-5.
0
Gain (dB)
2.
0
DB(GMax)
4
DB(|S[2,1]|)
30
Swp Max
5.05GHz
0.
35
2.
0
6
0.
0.8
1.0
Swp Max
5.05GHz
1.0
S11
Gain and Maximum Stable Gain
40
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-1.23
-1.01
-1.01
-1.03
-1.21
-1.34
-1.52
-2.00
-2.65
-3.86
-6.72
-14.09
-9.98
-4.27
-2.13
-1.24
-0.82
-177.95
178.17
172.63
163.72
155.20
146.17
136.69
126.65
115.04
97.52
86.05
94.99
166.89
157.68
142.95
130.88
120.68
24.07
19.55
15.55
12.03
9.86
8.11
6.92
6.13
5.80
6.01
6.17
6.15
4.98
2.52
-0.42
-3.40
-6.09
122.55
116.55
112.97
98.68
85.80
73.18
61.43
49.60
37.55
21.48
1.700
-23.83
-52.92
-80.08
-100.8
-116.44
-128.99
-40.25
-39.49
-40.13
-38.83
-39.30
-37.70
-37.73
-37.14
-36.23
-36.45
-34.63
-35.91
-36.75
-39.10
-37.80
-38.58
-39.37
17.32
10.63
15.98
10.31
-4.249
-2.398
-16.27
-14.34
-28.50
-46.08
-68.99
-100.68
-147.66
171.86
123.26
89.55
67.22
-1.26
-1.33
-1.17
-0.93
-0.66
-0.83
-0.95
-1.05
-1.04
-1.11
-1.10
-1.00
-0.77
-0.79
-0.81
-0.84
-0.92
-130.4
-155.43
-169.92
179.61
173.43
168.67
166.34
165.13
164.55
166.24
164.44
162.35
158.42
154.12
149.03
144.09
138.4
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt
capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
October 2004 Rev 1
ECP103
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
2450 MHz Application Circuit (ECP103G-PCB2450)
Typical RF Performance at 25qC
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
2450 MHz
10 dB
-14 dB
-10 dB
+30.5 dBm
Noise Figure
Device / Supply Voltage
Quiescent Current (1)
7 dB
+5 V
450 mA
+46 dBm
(+17 dBm / tone, 1 MHz spacing)
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S11 vs. Frequency
S22 vs. Frequency
0
16
-5
-5
14
12
+25°C
+85°C
10
1940
-15
+25°C
+85°C
1950
1960
1970
1980
-40°C
-25
1930
1990
Frequency (MHz)
1940
1950
7
P1 dB (dBm)
NF (dB)
1980
5
4
+85°C
1
-40°C
1940
1950
29
1970
1980
-40°C
25
1930
1990
1940
1950
1960
1970
1980
1990
45
40
1960
1970
1980
Frequency (MHz)
1990
1990
+85°C
-40°C
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25°C
freq. = 1960, 1961 MHz, +15 dBm
50
46
47
43
39
1950
1980
15 16 17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
OIP3 (dBm)
51
OIP3 (dBm)
50
1970
+25°C
OIP3 vs. Temperature
55
1960
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
Frequency (MHz)
55
1950
Frequency (MHz)
+85°C
+25°C, 15 dBm / tone
1940
1940
ACPR vs. Channel Power
+25°C
OIP3 vs. Frequency
35
1930
-25
1930
1990
31
27
1960
-40°C
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
Frequency (MHz)
OIP3 (dBm)
1970
33
6
0
1930
1960
35
+25°C
+85 °C
P1 dB vs. Frequency
Noise Figure vs. Frequency
2
+25 °C
-15
Frequency (MHz)
8
3
-10
-20
ACPR (dBc)
8
1930
-10
-20
-40°C
S22 (dB)
0
S11 (dB)
S21 (dB)
S21 vs. Frequency
18
42
38
34
35
30
-40
-15
10
35
Temperature ( °C)
60
85
10
12
14
16
18
Output Power (dBm)
20
22
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
October 2004 Rev 1
ECP103
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
ECP103G (SOIC-8 Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an
“ECP103G” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow
Standard:
JEDEC Standard J-STD-020
Functional Diagram
Land Pattern
1
8
2
7
3
6
4
5
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Mounting Config. Notes
1.
Thermal Specifications
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85q C
33q C / W
159q C
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function
of the voltage at pins 6 and 7 and the current applied to
pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
450 mA at an 85 C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247 C.
1000000
MTTF (million hrs)
Parameter
2.
MTTF vs. GND Tab Temperature
3.
100000
4.
10000
5.
1000
6.
100
50
60
70
80
90
100
7.
8
A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135” )
diameter drill and have a final plated thru diameter of .25
mm (.010” ).
Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
RF trace width depends upon the PC board material and
construction.
Use 1 oz. Copper minimum.
All dimensions are in millimeters (inches). Angles are in
degrees.
Tab temperature (° C)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
October 2004 Rev 1
Pin No.
1
3
6, 7
8
Backside Padd
2, 4, 5
ECP103
The Communications Edge TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
ECP103D (16-pin 4x4mm Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with an
“ ECP103D” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “ Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Land Pattern
MSL Rating: Level 3 at +235 C convection reflow
Standard:
JEDEC Standard J-STD-020
0.25mm DIA. THERMAL GROUND VIA HOLE VIAS ARE PLACED
ON A 0.65mm GRID. VIAS ARE TO BE CONNECTED TO TOP,
BOTTOM, AND INTERNAL GROUND PLANES IN ORDER TO
MAXIMIZE HEAT DISSIPATION. FOR .031" THK FR4 MATERIAL,
VIA BARREL PLATING TO BE MIN. 0.0014 THICK. VIAS TO BE
PLUGGED WITH EITHER CONDUCTIVE OR NON-CONDUCTIVE
EPOXY TO PREVENT SOLDER. DRAINS THROUGH VIA IN
REFLOW PROCESS
DEVICE GROUND PAD
2.0mm X 2.0mm
RECOMMENDED PAD
0.76mm X 0.34mm
N/C
N/C
GROUND PLANE AREA FOR VIAS
2.23mm X 2.23mm
Vbias
Functional Diagram
N/C
0.65mm
TYP.
Class 1B
Passes between 500 and 1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
16
15
14
13
Vref 1
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
9 N/C
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85q C
33q C / W
159q C
Notes:
1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function
of the voltage at pins 10 and 11 and the current applied
to pins 10, 11, and 16 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
450 mA at an 85 C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247 C.
MTTF vs. GND Tab Temperature
1000000
MTTF (million hrs)
Parameter
7
8
N/C
N/C
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
16L 4.0mm X 4.0mm PACKAGE
Thermal Specifications
6
N/C
TYP.
4.00mm
5
N/C
N/C 4
SOLDERMASK SWELL TO BE 0.5mm
FROM OUTSIDE EDGE OF ALL PADS
100000
Mounting Config. Notes
10000
1.
1000
2.
100
50
60
70
80
90
100
Tab temperature (° C)
3.
4.
5.
6.
7.
8
A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135” )
diameter drill and have a final plated thru diameter of .25
mm (.010” ).
Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
RF trace width depends upon the PC board material and
construction.
Use 1 oz. Copper minimum.
All dimensions are in millimeters (inches). Angles are in
degrees.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
October 2004 Rev 1
Pin No.
1
3
10, 11
16
Backside Padd
2, 4-9, 12-15
Similar pages