ECP103 The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 10 dB Gain @ 2450 MHz x 9 dB Gain @ 2600 MHz x Single Positive Supply (+5V) x Available in SOIC-8 or 16pin 4mm QFN package Applications x W-LAN x RFID x DMB x Fixed Wireless The ECP103 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP103 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for driver amplifier stages in wireless-LAN, digital multimedia broadcast, or fixed wireless applications. The device can also be used in next generation RFID readers. N/C N/C N/C 15 14 13 12 N/C N/C 2 11 RF OUT RF IN 3 10 RF OUT 9 N/C N/C 4 5 6 7 8 N/C x +46 dBm Output IP3 16 Vref 1 N/C x +30.5 dBm P1dB The ECP103 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30.5 dBm of compressed 1-dB power. The part is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested. Vbias x 2300 - 2700 MHz Functional Diagram N/C Product Description N/C Product Features ECP103D Vref 1 8 Vbias N/C 2 7 RF OUT RF IN 3 6 RF OUT N/C 4 5 N/C ECP103G Specifications (1) Parameter Typical Performance (4) Units Min Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Operating Current Range , Icc (3) Device Voltage, Vcc MHz MHz dB dB dB dBm dBm dB MHz dB dBm dBm mA V Typ Max 2300 400 Parameter 2700 2450 10 18 8 +30.5 +46 6.3 2600 9 +30 +45 450 5 Units Frequency S21 – Gain S11 S22 Output P1dB Output IP3 W-CDMA Channel Power @ -45 dBc ACPR Noise Figure Supply Bias (3) Typical MHz dB dB dB dBm dBm 2450 10 15 8 30.5 46 dBm 22.5 dB 7 2600 9 15 8 30.0 45 7 7 +5 V @ 450 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 C. 500 1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Parameters Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Rating -40 to +85 qC -65 to +150 qC +26 dBm +8 V 900 mA 5W Ordering Information Part No. ECP103D ECP103G ECP103D-PCB2450 ECP103D-PCB2650 ECP103G-PCB2450 ECP103G-PCB2650 Description 1 Watt InGaP HBT Amplifier (16p 4mm Pkg) 1 Watt InGaP HBT Amplifier (Soic-8 Pkg) 2450 MHz Evaluation Board 2600 MHz Evaluation Board 2450 MHz Evaluation Board 2600 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com October 2004 Rev 1 ECP103 The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier Typical Device Data – ECP103G (Soic-8 Package) S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads) S22 0. 4 0.8 6 0. 0 3. 25 3. 0 0 4. 0 4. 0 5. 0. 2 20 5.0 0.2 10.0 5 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 10 0.2 15 10.0 10.0 -10. 0 -10. 0 2 -0. 2 -0. -4 .0 -5. 0 .0 -2 .6 Swp Min 0.05GHz -1.0 Swp Min 0.05GHz -0.8 2.5 4 -0 2 . -0 .0 -2 1 1.5 Frequency (GHz) -0.8 0.5 -0 .6 0 .4 -1.0 -0 -3 .0 -10 0 -5 -3 . 0 -4 .0 -5. 0 Gain (dB) 2. 0 DB(GMax) 4 DB(|S[2,1]|) 30 Swp Max 5.05GHz 0. 35 2. 0 6 0. 0.8 1.0 Swp Max 5.05GHz 1.0 S11 Gain and Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82 -177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68 24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09 122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99 -40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37 17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22 -1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92 -130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com October 2004 Rev 1 ECP103 The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier 2450 MHz Application Circuit (ECP103G-PCB2450) Typical RF Performance at 25qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 2450 MHz 10 dB -14 dB -10 dB +30.5 dBm Noise Figure Device / Supply Voltage Quiescent Current (1) 7 dB +5 V 450 mA +46 dBm (+17 dBm / tone, 1 MHz spacing) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency S22 vs. Frequency 0 16 -5 -5 14 12 +25°C +85°C 10 1940 -15 +25°C +85°C 1950 1960 1970 1980 -40°C -25 1930 1990 Frequency (MHz) 1940 1950 7 P1 dB (dBm) NF (dB) 1980 5 4 +85°C 1 -40°C 1940 1950 29 1970 1980 -40°C 25 1930 1990 1940 1950 1960 1970 1980 1990 45 40 1960 1970 1980 Frequency (MHz) 1990 1990 +85°C -40°C OIP3 vs. Output Power freq. = 1960, 1961 MHz, +25°C freq. = 1960, 1961 MHz, +15 dBm 50 46 47 43 39 1950 1980 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) OIP3 (dBm) 51 OIP3 (dBm) 50 1970 +25°C OIP3 vs. Temperature 55 1960 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 Frequency (MHz) 55 1950 Frequency (MHz) +85°C +25°C, 15 dBm / tone 1940 1940 ACPR vs. Channel Power +25°C OIP3 vs. Frequency 35 1930 -25 1930 1990 31 27 1960 -40°C IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz Frequency (MHz) OIP3 (dBm) 1970 33 6 0 1930 1960 35 +25°C +85 °C P1 dB vs. Frequency Noise Figure vs. Frequency 2 +25 °C -15 Frequency (MHz) 8 3 -10 -20 ACPR (dBc) 8 1930 -10 -20 -40°C S22 (dB) 0 S11 (dB) S21 (dB) S21 vs. Frequency 18 42 38 34 35 30 -40 -15 10 35 Temperature ( °C) 60 85 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com October 2004 Rev 1 ECP103 The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier ECP103G (SOIC-8 Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “ECP103G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Functional Diagram Land Pattern 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Mounting Config. Notes 1. Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85q C 33q C / W 159q C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. 1000000 MTTF (million hrs) Parameter 2. MTTF vs. GND Tab Temperature 3. 100000 4. 10000 5. 1000 6. 100 50 60 70 80 90 100 7. 8 A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. Tab temperature (° C) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com October 2004 Rev 1 Pin No. 1 3 6, 7 8 Backside Padd 2, 4, 5 ECP103 The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier ECP103D (16-pin 4x4mm Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “ ECP103D” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Land Pattern MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 0.25mm DIA. THERMAL GROUND VIA HOLE VIAS ARE PLACED ON A 0.65mm GRID. VIAS ARE TO BE CONNECTED TO TOP, BOTTOM, AND INTERNAL GROUND PLANES IN ORDER TO MAXIMIZE HEAT DISSIPATION. FOR .031" THK FR4 MATERIAL, VIA BARREL PLATING TO BE MIN. 0.0014 THICK. VIAS TO BE PLUGGED WITH EITHER CONDUCTIVE OR NON-CONDUCTIVE EPOXY TO PREVENT SOLDER. DRAINS THROUGH VIA IN REFLOW PROCESS DEVICE GROUND PAD 2.0mm X 2.0mm RECOMMENDED PAD 0.76mm X 0.34mm N/C N/C GROUND PLANE AREA FOR VIAS 2.23mm X 2.23mm Vbias Functional Diagram N/C 0.65mm TYP. Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 16 15 14 13 Vref 1 12 N/C N/C 2 11 RF OUT RF IN 3 10 RF OUT 9 N/C Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85q C 33q C / W 159q C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Parameter 7 8 N/C N/C Function Vref RF Input RF Output Vbias GND N/C or GND 16L 4.0mm X 4.0mm PACKAGE Thermal Specifications 6 N/C TYP. 4.00mm 5 N/C N/C 4 SOLDERMASK SWELL TO BE 0.5mm FROM OUTSIDE EDGE OF ALL PADS 100000 Mounting Config. Notes 10000 1. 1000 2. 100 50 60 70 80 90 100 Tab temperature (° C) 3. 4. 5. 6. 7. 8 A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com October 2004 Rev 1 Pin No. 1 3 10, 11 16 Backside Padd 2, 4-9, 12-15