Filtronic FMA3008 2-20ghz broadband mmic amplifier Datasheet

FMA3008
Preliminary Datasheet v2.1
2-20GHZ BROADBAND MMIC AMPLIFIER
FEATURES:
•
•
•
•
•
•
•
FUNCTIONAL SCHEMATIC:
Cascode Configuration
11dB Gain
pHEMT Technology
AGC control with gate bias
Input Return Loss <-15dB
Output Return Loss <-10dB
Medium Power 20dBm
VDD
RF Input
RF Output
GENERAL DESCRIPTION:
VG
The FMA3008 is a high performance 2-20GHz
Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic 0.25µm process. The
cascode gate voltage is supplied on Chip, with
the option of supplying an external voltage.
The Circuit is DC blocked at both the input and
output.
TYPICAL APPLICATIONS:
•
•
•
Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
ELECTRICAL SPECIFICATIONS:
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Small Signal Gain
2-20GHz
11
dB
Input Return Loss
2-20GHz
-10
dB
Output Return Loss
2-20GHz
-14
dB
Reverse Isolation
2-20GHz
<-40
dB
Output Power at 1dB
10GHz
23.5
dBm
compression point
18GHz
22.5
dBm
Noise Figure
2-20GHz
4.5
dB
Gate Voltage
For Id=120mA
-0.3
V
Note: TAMBIENT = +25°C, Z0 = 50Ω, VD=6V
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3008
Preliminary Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
PAD LAYOUT:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+25dBm
Gate Voltage
VG1
-2V
Drain Voltage
VDD
+10V
Ptot
tbd
Gain Compression
Comp
tbd
Thermal Resistivity
θJC
0.66°C/W
Operating Temp
Toper
-40°C to +85°C
Storage Temp
Tstor
-55°C to +150°C
Total Power
Dissipation
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
A
RF in
RF in
(105,713)
B
GND
Ground
(198, 126)
C
VG1
Gate Voltage
(461, 128)
D
Out
RF Output
(663, 713)
E
GND
Ground
(2170, 1580)
F
VD
Drain Voltage
(1998, 1580)
G
VG2
Cascode Gate Voltage
(132, 1107)
B
(Optional)
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
F
PAD
REF
E
G
D
A
B
C
DIE SIZE (μm)
DIE THICKNESS (μm)
MIN. BOND PAD PITCH
(μm)
MIN. BOND PAD OPENING
(μm x μm )
2350 x 1710
100
179
100 x 100
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3008
Preliminary Datasheet v2.1
TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS:
Note: Measurement Conditions VG1= -0.3V, ID= 120mA, VDD= 6V, TAMBIENT = 25°C
Gain
Input Return Loss
0
14
Input Return Loss (dB)
12
Gain (dB)
10
8
6
4
-10
-20
-30
2
-40
0
2
4
6
8
10
12
14
Frequency (GHz)
16
18
20
2
22
4
6
Output Return Loss
8
10
12
14
Frequency (GHz)
16
18
20
22
16
18
20
22
Reverse Isolation
0
0
Reverse Isolation (dB)
Output Return Loss (dB)
-10
-20
-30
-20
-40
-60
-40
-80
-50
2
4
6
8
10
12
14
Frequency (GHz)
16
18
20
2
22
4
6
8
10
12
14
Frequency (GHz)
Output Power at P1dB Compression Point vs Freq
26
Output Power (dBm)
24
22
20
18
16
14
12
10
2
4
6
8
10
12
Frequency (GHz)
14
16
18
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3008
Preliminary Datasheet v2.1
BIASING CIRCUIT SCHEMATIC:
VDD
VG2
100pF
100pF
100nF
100nF
Optional Circuit for
external cascade Gate
Control
RF Output
RF Input
VG1
100nF
100pF
ASSEMBLY DIAGRAM:
It is recommended that the RF connections be made using two bond wires 25µm in diameter and a
maximum length of 300µm. Optimum input and output return loss can be achieved, to compensate for
bond wire length, with the addition of a microstrip transformer, shown in the diagram below.
To Evaluation Board via an 0402
Surface Mounted capacitor
100pF Chip
Capacitor
Substrate: Alumina
Thickness: 635µm
Dimensions in mm
1.1
1.1
0.61
0.61
0.65
0.65
100pF Chip
Capacitors
Transformer Impedance 36Ω
Electrical Length 21º at 10GHz
To Evaluation Board via an 0402
Surface Mounted capacitor
BILL OF MATERIALS:
COMPONENT
All RF tracks should be 50Ω characteristic material
Capacitor, 100pF, chip capacitor
Capacitor, 100pF, 0402
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3008
Preliminary Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
PART NUMBER
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
DESCRIPTION
Die in Waffle-pack
FMA3008
(Gel-pak available on request)
The recommended die attach is gold/tin
eutectic solder under a nitrogen atmosphere.
Stage temperature should be 280-290°C;
maximum time at temperature is one minute.
The recommended wire bond method is
thermo-compression wedge bonding with 0.7
or 1.0 mil (0.018 or 0.025 mm) gold wire.
Stage temperature should be 250-260°C.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
HANDLING
PRECAUTIONS:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 1A (0-500
V) as defined in JEDEC Standard No. 22A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise data and large-signal
models are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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