ETC FP2189-PCB900S High performance 1-watt hfet (heterostructure fet) in a low-cost sot-89 surfacemount Datasheet

FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Product Features
• 50 – 4000 MHz
• Up to +31 dBm P1dB
• Up to +45 dBm Output IP3
• High Drain Efficiency
• 19 dB Gain @ 900 MHz
• MTBF >100 Years
• SOT-89 SMT Package
Product Description
Functional Diagram
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +45 dBm output
IP3 performance and an output power of +31 dBm at
1-dB compression.
4
2
1
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTBF of
greater than 100 years at a mounting temperature of
85°C. All devices are 100% RF & DC tested.
Function
Input
Ground
Output/Bias
Ground
3
Pin No.
1
2
3
4
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Typical Parameters5
Specifications
DC Electrical Parameter
1
Saturated Drain Current , Idss
Transconductance, Gm
Pinch Off Voltage2, Vp
Units
Min
mA
mS
V
Typ
Max
Parameter
Units
Max
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Vdd
Idq6
Idd at P1dB
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
mA
500
350
-2.0
Parameters3
Units
Min
Frequency Range
Small Signal Gain, Gss
Output P1dB
Output IP34
Thermal Resistance
MHz
dB
dBm
dBm
°C/W
50
Typ
4000
15
+31
+45
30
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 0.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz
in an application circuit with ZL = ZLOPT, ZS = ZSOPT .
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Maximum DC Power
RF Input Power (continuous)
Rating
-40 to +85 °C
-40 to +125 °C
4.0 W
+20 dBm
Operation of this device above any of there parameters may cause permanent damage
5.
6.
Typical
915
19.1
-17
-10
+30.3
+44.3
4.2
+8
250
260
1960
15.2
-16
-8
+30.8
+44.2
3.5
+8
250
330
2140
13.8
-23
-9
+31.4
+45.5
4.5
+8
250
320
Typical parameters represent performance in an application circuit.
Idq is the quiescent drain current at small signal output levels. The
current may increase as the output power is increased near its
compression point.
Ordering Information
Part No.
Description
FP2189
1-Watt HFET
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
900 MHz Application Circuit
1900 MHz Application Circuit
2140 MHz Application Circuit
(Available in Tape & Reel)
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Typical Performance Data
S-Parameters (Vds = 8 V, Ids = 250 mA, 25°C, Unmatched 50 ohm system)
Gain, Maximum Stable Gain vs Frequency
Gmsg
S21
S11 vs Frequency
5 GHz
S22 vs Frequency
6 GHz
4 GHz
6 GHz
5 GHz
3 GHz
4 GHz
3 GHz
2 GHz
2 GHz
1 GHz
1 GHz
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters
that are shown are the de-embedded data down to the device leads and represents typical performance of the device.
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Application Circuit: 870 – 960 MHz
S-Parameters vs Frequency
10
Typical Specifications
1
915
19.1
-17
-10
+30.3
+44.3
4.2
+8V
250 mA
960
19.1
-25
-12
+30.2
+44.3
4.2
0
18
S22
-10
16
S11
-20
-30
800
Idq is the quiescent current at small signal output levels. The current typically
increases up to 260 mA at the 1-dB compression point.
850
900
S21 (dB)
870
19.1
-12
-9
+30.4
+44.4
4.2
S11, S22, S12 (dB)
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Vdd
Idq1
20
S21
14
12
1000
950
Frequency (MHz)
-Vgg
Vdd
+ 8 V @ 250 mA
C4
1000 pF
C12
0.1 µF
C3
100 pF
C8
1000 pF
R1
100 Ω
RF IN
C1
100 pF
L1
18 nH
L4
5.6 nH
Z1
Z2
Z3
C14
4.7 pF
C7
100 pF
FP2189
Sot-89
R2
10 Ω
PIN 1
PIN 3
Z4
L3
82 nH
L2
5.6 nH
Z5
RF OUT
Z6
Z7
C5
3 pF
PIN 2,4
C9
100 pF
Ref. Designator
Length on .014”
Electrical length @
GETEKTM (mil)
900 MHz (deg)
Z1
30
1.45
Z2
30
1.45
Z3
135
6.5
Z4
50
2.4
Z5
50
2.4
Z6
42
2.0
Z7
65
3.1
The lengths are measured from the component edge-to-edge.
All microstrip lines have a line impedance of 50 Ω.
14 mil GETEKTM ML200DSS (εr = 4.2)
The layout of this circuit can be downloaded from the website.
Ref. Designator
Value
C1, C3, C7, C9
100 pF
C4, C8
1000 pF
C5
3 pF
C11
0.1 µF
C14
4.7 pF
R1
100 Ω
R2
10 Ω
L1
18 nH
L2, L4
5.6 nH
L3
82 nH
All other parts are No Loads.
Total unique parts count: 10
Part style
5% 50V, NPO/COG
5%, 50V, NPO/COG
AVX 06031J3R0BAWTR
10%, 50V, X7R
AVX 06035J4R7APWTR
1/16 W, 5%
1/16 W, 5%
TOKO LL1608-FH18NJ
TOKO LL1608-FH5N6S
TOKO LL1608-FH82NJ
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
0603
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Application Circuit: 1930 – 1990 MHz
S-Parameters vs Frequency
Typical Specifications
1
1960
15.2
-16
-8
+30.8
+44.2
3.5
+8V
250 mA
1990
15.0
-19
-9
+30.7
+44.3
3.5
0
-10
12
-20
10
S11
-30
1800
Idq is the quiescent current at small signal output levels. The current typically
increases up to 330 mA at the 1-dB compression point.
14
S22
S21 (dB)
1930
15.3
-14
-8
+30.8
+44
3.6
16
S21
S11, S22, S12 (dB)
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Vdd
Idq1
10
1850
1900
1950
2000
2050
8
2100
Frequency (MHz)
-Vgg
Vdd
+ 8 V @ 250 mA
C4
1000 pF
C8
0.1 µF
C3
33 pF
C6
33 pF
R1
20 Ω
C7
1000 pF
C2
2.4 pF
RF IN
L1
10 nH
C1
33 pF
Z1
Z2
C13
2.4 pF
L2
22 nH
FP2189
Sot-89
R2
5.1 Ω
PIN 1
PIN 3
Z3
PIN 2,4
C9
33 pF
RF OUT
Z4
C5
1.5 pF
Ref. Designator
Length on .014”
Electrical length @
GETEKTM (mil)
1900 MHz (deg)
Z1
30
3.1
Z2
145
14.8
Z3
50
5.1
Z4
255
26.1
The lengths are measured from the component edge-to-edge.
All microstrip lines have a line impedance of 50 Ω.
Ref. Designator
Value
C1, C3, C6, C9
33 pF
C2, C13
2.4 pF
C4, C7
1000 pF
C5
1.5 pF
C8
0.1 µF
R1
20 Ω
R2
5.1 Ω
L1
10 nH
L2
22 nH
All other parts are No Loads.
Total unique parts count: 9
14 mil GETEKTM ML200DSS (εr = 4.2)
The layout of this circuit can be downloaded from the website.
Part style
5% 50V, NPO/COG
AVX 06035J2R4AAWTR
5% 50V, NPO/COG
AVX 06035J1R5AAWTR
10%, 50V, X7R
1/16 W, 5%
1/16 W, 5%
TOKO LL1608-FH10NJ
TOKO LL1608-FH22NJ
Size
0603
0603
0603
0603
1206
0603
0603
0603
0603
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Application Circuit: 2110 – 2170 MHz
S-Parameters vs Frequency
Typical Specifications
1
2140
13.8
-23
-9
+31.4
+45.5
4.5
+8V
250 mA
2170
13.7
-20
-10
+31.4
+43.2
4.5
16
S21
0
14
S22
-10
12
-20
S11
-30
2000
Idq is the quiescent current at small signal output levels. The current typically
increases up to 320 mA at the 1-dB compression point.
2050
2100
2150
2200
2250
S21 (dB)
2110
13.9
-27
-8
+31.4
+44.5
4.5
S11, S22, S12 (dB)
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Vdd
Idq1
10
10
8
2300
Frequency (MHz)
Vdd
+ 8 V @ 250 mA
-Vgg
C4
22 pF
C8
0.1 µF
C6
1000 pF
R1
10 Ω
RF IN
C7
22 pF
L1
5.6 nH
C1
1.8 pF
Z1
Z2
R2
5.1 Ω
Z3
C4
1.5 pF
L2
18 nH
FP2189
Sot-89
PIN 1 PIN 3
Z4
PIN 2,4
C9
22 pF
RF OUT
Z5
C5
1.2 pF
Ref. Designator
Length on .014”
Electrical length @
GETEKTM (mil)
2140 MHz (deg)
Z1
150
17.3
Z2
15
1.7
Z3
100
11.5
Z4
50
5.8
Z5
225
25.9
The lengths are measured from the component edge-to-edge.
All microstrip lines have a line impedance of 50 Ω.
Ref. Designator
Value
Part style
Size
C1
1.8 pF
AVX 06035J1R8AAWTR
0603
C3, C7, C9
22 pF
5% 50V, NPO/COG
0603
C4
1.5 pF
AVX 06035J1R5AAWTR
0603
C5
1.2 pF
AVX 06035J1R2AAWTR
0603
C6
1000 pF
5% 50V, NPO/COG
0603
C8
0.1 µF
10%, 50V, X7R
1206
R1
10 Ω
1/16 W, 5%
0603
R2
6.2 Ω
1/16 W, 5%
0603
L1
18 nH
TOKO LL1608-FH18NJ
0603
L2
5.6 nH
TOKO LL1608-FH5N6S
0603
All other parts are No Loads.
Total unique parts count: 10
C3 is of size 0805 on the app board so that it would fit in the 1206 pad.
14 mil GETEKTM ML200DSS (εr = 4.2)
The layout of this circuit can be downloaded from the website.
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
FP2189
The Communications Edge TM
Preliminary Product Information
1 Watt HFET
Application Note
Vdd = +8 V
Special attention should be taken to properly bias the FP2189. Power supply sequencing
is required to prevent the device from operating at 100% Idss for a prolonged period of
time and possibly causing damage to the device. It is recommended that for the safest
operation, the negative supply be “first on and last off.” With a negative gate voltage
present, the drain voltage can then be applied to the device. The gate voltage can then
be adjusted to have the device be used at the proper quiescent bias condition.
An optional temperature-compensation active-bias circuit is recommended for use with
the application circuit, which requires two standard voltage supplies +8V and -4V, and
is set for an optimal drain bias of +8V @ 250 mA. The circuit schematic, shown on the
right, uses dual PNP transistors to provide a constant drain current into the FP2189 and
also eliminates the effects of pinchoff variation. Temperature compensation is achieved
by tracking the voltage variation with the temperature of the emitter-to-base junction of
the PNP transistors. Thus the transistor emitter voltage adjusts the voltage incident at
the gate of the FP2189 so that the device draws a constant current, regardless of the
temperature. Two fixed voltage supplies are needed for operation. A Rohm dual
transistor, UMT1N, and a dual-chip resistor (8.2 kΩ) are recommended to minimize
board space and help decrease the current variability through R4 with the components
being matched to one another. The active-bias circuit can directly be attached to the
voltage supply ports in the circuit diagram as shown above (Vdd and Vgg).
Outline Drawing
Land Pattern
R4
1Ω
1%
0805
R3
220 Ω
4
1
2
5
UMT1N
R5
8.2 kΩ
Vgg = -4 V
3
6
R6
8.2 kΩ
Connected to Vgg
on App Circuit
Connected to Vdd
on App Circuit
Mounting Configuration
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
May 2002
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