Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 1/6 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD8530F3 Description The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: •High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package Equivalent Circuit Outline BTD8530F3 TO-263 C B R1≈4k R2≈60 B：Base C：Collector E：Emitter B C E E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Note : *1. Single Pulse Pw=300μs BTD8530F3 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 250 250 10 10 15 2 100 -55~+150 -55~+150 Unit V V V *1 A W °C °C CYStek Product Specification Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 2/6 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.25 62.5 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 Min. 250 250 1500 2000 1500 Typ. - Max. 100 100 2 1 1.2 1.5 1.8 1.8 - Unit V V μA μA mA V V V V V - Test Conditions IC=100μA, IE=0 IC=1mA, IB=0 VCE=250V, IE=0 VCB=220V, IE=0 VEB=5V, IC=0 IC=5A, IB=7mA IC=6A, IB=5mA IC=10A, IB=12.5mA IC=5A, IB=15mA VCE=4V, IC=8A VCE=2V, IC=2A VCE=4V, IC=5A VCE=5V, IC=10A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTD8530F3 Package TO-263 (Pb-free lead plating) Shipping 800 pcs / Tape & Reel Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 100000 Current Gain---HFE Saturation Voltage---(mV) VCE=4V HFE 10000 VCE=2V 1000 VCESAT IC=1200IB 1000 IC=800IB 100 100 0.1 BTD8530F3 1 10 Collector Current---IC(A) 100 0.1 1 10 Collector Current ---IC(A) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 3/6 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current ON Voltage vs Collector Current 10000 VBESAT@IC=333IB ON Voltage --- (mV) Saturation Voltage---(mV) 10000 1000 VBE(ON)@VCE=4V 1000 100 100 0.1 1 10 Collector Current ---IC(A) 0.01 100 Typical Built-in Diode Characteristics 1000 10 Capacitance---(pF) Forward Current---IF(A) 100 Output Capacitance vs Reverse Biased Voltage 100 1 0.1 100 Cob 0.01 10 0.001 100 1000 Forward Voltage---VF(mV) 0.1 10000 1 10 Reverse Biased Voltage---VCB(V) 100 Power Derating Curve Power Derating Curve 120 Power Dissipation---PD(W) 2.5 Power Dissipation---PD(W) 0.1 1 10 Collector Current ---IC(mA) 2 1.5 1 0.5 100 80 60 40 20 0 0 0 BTD8530F3 50 100 150 Ambient Temperature ---TA(℃ ) 200 0 50 100 150 Case Temperature ---TC(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTD8530F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD8530F3 CYStek Product Specification Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 6/6 CYStech Electronics Corp. TO-263 Dimension Marking : B D 2 F α1 2 1 E C A Device Name D8530 □□□□ Date Code α2 Style : Pin 1.Base 2.Collector 3.Emitter 3 I G J K L α3 H 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical Inches Min. Max. 0.3800 0.4050 0.3300 0.3700 0.0550 0.5750 0.6250 0.1600 0.1900 0.0450 0.0550 0.0900 0.1100 0.0180 0.0290 DIM A B C D E F G H Millimeters Min. Max. 9.65 10.29 8.38 9.40 1.40 14.61 15.88 4.06 4.83 1.14 1.40 2.29 2.79 0.46 0.74 DIM I J K L α1 α2 α3 Inches Min. Max. 0.0500 0.0700 *0.1000 0.0450 0.0550 0.0200 0.0390 - Millimeters Min. Max. 1.27 1.78 *2.54 1.14 1.40 0.51 0.99 6° 8° 6° 8° 0° 5° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD8530F3 CYStek Product Specification