Filtronic FMS2027 Dc-20 ghz mmic spdt absorptive switch Datasheet

FMS2027
Pre-Production Datasheet v3.0
DC–20 GHZ MMIC SPDT ABSORPTIVE SWITCH
FEATURES:
•
•
•
•
•
FUNCTIONAL SCHEMATIC:
Low insertion loss: 2.1 dB at 20GHz
High isolation: 42 dB at 20GHz
Absorptive output in off-state
Excellent low control voltage performance
Available in die form
RFIN
GENERAL DESCRIPTION:
The FMS2027 is a low-loss high-isolation
broadband single-pole-double-throw Gallium
Arsenide switch, designed on the FL05 0.5µm
switch process from Filtronic. It offers
absorptive properties from the output (50
Ohms termination).
This process technology offers leading-edge
performance optimised for switch applications.
The FMS2027 is developed for the broadband
communications,
instrumentation
and
electronic warfare markets.
RFO1
RFO2
TYPICAL APPLICATIONS:
•
•
•
•
Broadband communications
Test Instrumentation
Fiber Optics
Electronic warfare (ECM, ESM)
ELECTRICAL SPECIFICATIONS (based on on-wafer measurements):
Parameter
Conditions
Min
Typ
Max
Units
Insertion Loss
DC
10 GHz
15 GHz
20 GHz
-1
-1.5
-1.8
-2.3
-0.85
-1.3
-1.6
-2.1
–
–
–
–
dB
dB
dB
dB
Isolation
DC-20 GHz
–
-42
-40
dB
Input Return Loss
(ON state)
DC-20 GHz
–
-12
-10
dB
Output Return Loss
(ON state)
DC-20 GHz
–
-16
-13
dB
Output Return Loss
(OFF state)
DC-20 GHz
–
-22
-12
dB
P1dB
2 GHz
10 GHz
18 GHz
22
21
19
23
22.5
21
–
–
–
dBm
dBm
dBm
Switching speed
10% to 90% RF
90% to 10% RF
50% DC to 90% RF
50% DC to 10% RF
–
–
–
–
17
42
27
53
–
–
–
–
ns
ns
ns
ns
Note: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2027
Pre-Production Datasheet v3.0
ABSOLUTE MAXIMUM RATINGS:
TRUTH TABLE:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input
Power
Pin
+38dBm
Control
Voltage
Vctrl
–
Operating
Temp
Toper
-40°C to +85°C
Storage Temp
Tstor
-55°C to +150°C
CONTROL LINE
RF PATH
A
B
RFIN-RFO1
RFIN-RFO2
-5V
0V
ON
OFF
0V
-5V
OFF
ON
Note: -5V ± 0.2V; 0V ± 0.2V
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PAD LAYOUT:
PAD
NAME
A
B
A
RFO1
B
RFIN
A B
A
RFO2
Note:
1
Co-ordinates are referenced from the bottom left
hand corner of the die to the centre of bond pad
opening
2
Only one control line A and one control line B
require connection
DESCRIPTION
RFIN
RFIN
RFO1
RFOUT1
RFO2
RFOUT2
A
VA1
A
VA2
A
VA3
A
VA4
B
VB1
B
VB2
B
VB3
DIE SIZE (µm)
DIE THICKNESS
(µm)
MIN. BOND PAD PITCH
(µm)
MIN. BOND PAD OPENING
(µm x µm )
1336 x 934
100
150
94 x 94
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2027
Pre-Production Datasheet v3.0
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C. Both arms RFO1 and RFO2 are
symmetrical.
Isolation (S21 OFF)
0.00
0.00
-0.50
-20.00
S21 (dB)
S21 (dB)
Insertion Loss (S21 ON)
-1.00
-1.50
-40.00
-60.00
-80.00
-2.00
-100.00
-120.00
-2.50
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
8
12
14
16
18
20
14
16
18
20
18
20
Output Return Loss (S22 ON)
Input Return Loss (S11 ON)
0.00
0.00
-5.00
-5.00
-10.00
S22 (dB)
S11 (dB)
10
Frequency (GHz)
Frequency (GHz)
-15.00
-10.00
-15.00
-20.00
-20.00
-25.00
-25.00
-30.00
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
8
10
12
Frequency (GHz)
Frequency (GHz)
Absorptive Output Return Loss (S22 OFF)
P1dB
0.00
28.00
24.00
-20.00
P1dB (dBm)
S22 (dB)
-10.00
-30.00
-40.00
20.00
16.00
12.00
8.00
-50.00
4.00
-60.00
0.00
0
2
4
6
8
10
12
14
16
18
20
2
4
6
8
Frequency (GHz)
10
12
14
16
Frequency (GHz)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2027
Pre-Production Datasheet v3.0
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS OVER TEMPERATURE:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT as indicated. Both arms RFO1 and RFO2
are symmetrical.
TAMBIENT = 25°C
TCOLD = -40°C
THOT = +85°C
Insertion Loss (S21 ON)
Isolation (S21 OFF)
0.00
0.00
-10.00
-20.00
S21 (dB)
S21 (dB)
-0.50
-1.00
-1.50
-30.00
-40.00
-50.00
-60.00
-70.00
-2.00
-80.00
-90.00
-2.50
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
Input Return Loss (S11 ON)
10
12
14
16
18
20
14
16
18
20
Output Return Loss (S22 ON)
0.00
0.00
-5.00
-5.00
-10.00
S22 (dB)
S11 (dB)
8
Frequency (GHz)
Frequency (GHz)
-15.00
-10.00
-15.00
-20.00
-20.00
-25.00
-30.00
-25.00
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
Frequency (GHz)
8
10
12
Frequency (GHz)
Absorptive Output Return Loss (S22 OFF)
0.00
-10.00
S22(dB)
-20.00
-30.00
-40.00
-50.00
-60.00
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2027
Pre-Production Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
HANDLING
PRECAUTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
To avoid damage to the
devices care should be exercised during
handling.
Proper Electrostatic Discharge
(ESD) precautions should be observed at all
stages of storage, handling, assembly, and
testing. These devices should be treated as
Class 1A (250-500 V) as defined in JEDEC
Standard No. 22-A114. Further information on
ESD control measures can be found in MILSTD-1686 and MIL-HDBK-263.
The back of the die is metallised and the
recommended mounting method is by the use
of solder or conductive epoxy. If epoxy is
selected then it should be applied to the
attachment surface uniformly and sparingly to
avoid encroachment of epoxy on to the top
face of the die and ideally should not exceed
half the chip height. For automated dispense
Ablestick LMISR4 is recommended and for
manual dispense Ablestick 84-1 LMI or 84-1
LMIT are recommended. These should be
cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing
only. If possible the curing oven should be
flushed with dry nitrogen.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
Thermosonic
wedge
bonding
and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
FMS2027-000
Die in Waffle-pack
(Gel-pak available on request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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