MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE CM50MX-24A ¡IC ..................................................................... 50A ¡VCES ......................................................... 1200V ¡CIB (3-phase Converter + 3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 55 29 56 28 57 27 58 26 59 25 60 24 61 23 2 3 4 5 6 7 8 TERMINAL t = 0.8 φ4.3 1.5 30 1 (3.81) 1.15 0.65 ＊81.67 ＊85.48 ＊89.29 ＊93.1 ＊96.91 ＊66.43 ＊70.24 ＊47.38 ＊51.19 54 (7.4) 1.2 ＊15.48 ＊19.28 ＊30.72 ＊34.52 φ2.5 φ2.1 12.5 ＊11.66 ＊15.48 ＊23.1 ＊26.9 ＊34.52 ＊38.34 20.5 17 13 7 3.75 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 SECTION A 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ＊Pin positions with tolerance A ＊91.2 ＊95 ＊75.96 ＊79.76 ＊60.72 ＊64.52 ＊45.48 ＊49.28 0.8 ＊30.24 ＊34.04 (7.75) ＊15 ＊18.8 0 (3) 3.5 φ 0.5 0.8 LABEL Tolerance otherwise specified TH1(29) P(52~53) P1(54~55) GuP(49) GvP(44) GwP(39) Division of Dimension NTC ＊58.4 0 4-φ5.5 MOUNTING HOLES 39 50 ±0.5 57.5 62 ＊4.2 ＊28.33 ＊32.14 0 ＊4.06 ＊13.09 ＊16.9 121.7 ＊118.1 110 ±0.5 99 94.5 to 3 ±0.2 TH2(28) EuP(48) R(1~2) S(5~6) T(9~10) U(13~14) B(24~25) GB(35) EvP(43) GuN(34) GvN(33) Tolerance 0.5 EwP(38) over 3 to 6 ±0.3 V(17~18) over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 W(21~22) GwN(32) N(57~58) N1(60~61) Es(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM 2FW. 20 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PWRW IE (Note.3) IERM(Note.3) (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 1200 ±20 50 100 355 50 100 Unit Rating 1200 ±20 30 60 260 1200 30 60 Unit Rating 1600 440 50 Unit V 9 V A W A BRAKE PART Symbol VCES VGES IC ICRM PWRW VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 106°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 1°C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time 500 A 1040 A2S Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 270 Unit MODULE Symbol Tj Tstg VisoO — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness 0RXQWLQJWorque Weight Conditions Terminals to base plate, f = 60Hz, AC for 1 min506 (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) °C 9 μm N·m g +：convex –：concave – Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X – + Heat sink side 2FW. 20 2 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25°C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate-emitter leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time 5ise time Turn-off delay time )all time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)D UJ RG (Note. 6) IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V G-E Short Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V, RG = 6.2Ω Inductive load (IE = 50A) IE = 50A, G-E Short (Note. 6) IE = 50A, G-E Short Thermal resistance per 1/6 IGBT (Note. 1) (Junction to case) per 1/6 free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Tj = 25°C Tj = 125°C Chip Min. — 6 — — — — — — — — — — — — — — — — — — — — 6 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 250 — — — — — 2 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 8.5 0.75 0.17 — 100 50 300 600 200 — 3.4 — — 0.35 0.63 — 62 Min. — 6 — — — — — — — — — — — — — — — 10 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 150 — 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 5.1 0.45 0.1 — 1 3.4 — — 0.48 0.79 — 100 Min. — — Limits Typ. — 1.2 Max. 6 1.6 — — 0.33 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cutoff current Gate-emitter threshold voltage IC = 3mA, VCE = 10V GateHPLWWHU leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage (Note. 6) IC = 30A, VGE = 15V IC = 30A, VGE = 15V Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Repetitive peak reverse current VF(Note.3) Forward voltage Rth(j-c)Q Rth(j-c)D UJ RG IF = 30A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance VCE = 10V G-E Short Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 600V, IC = 30A, VGE = 15V VR = VRRM (Note. 6) IF = 30A Tj = 25°C Tj = 125°C Chip Unit mA V μA V nF nC mA V K/W Ω CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Repetitive peak reverse current VR = VRRM, Tj = 150°C IF = 50A Forward voltage Thermal resistance per Diode (Note. 1) (Junction to case) Unit mA V K/W Jan. 2009 3 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R25 ΔR/R B(25/50) P25 Parameter Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C Zero power resistance Deviation of resistance B constant Power dissipation (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Min. Limits Typ. Max. — 0.015 — Unit kΩ % K mW MODULE Symbol Rth(c-s) Parameter Conditions Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module (Note. 2) Unit K/W Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCEsat and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Dimensions in mm (tolerance: ±1mm) Chip Location (Top view) (121.7) 97.6 101.2 102.8 85.8 91.3 70.4 75.9 63.9 47.9 38.8 0 29.7 (110) 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Tr Br 55 CR C R C R RP S P T P 2 3 4 5 6 7 44.9 0 1 35.8 61 26.7 60 42.0 8 30 29 28 27 26 25 24 23 18.6 26.7 (Tr/UP, Tr/VP, Tr/WP) 27.4 (Di/Br) 27.9 (Th) 34.9 (Di/UP, Di/VP, Di/WP) 35.6 (Tr/UN, Tr/VN, Tr/WN) 43.3 9 10 11 12 13 14 15 16 17 18 19 20 21 22 99.4 59 93.5 58 78.1 83.1 86.5 57 Tr Tr Di Tr UP VP B r WP Th Di Tr Di Tr Di Tr UP UN VP VN WP WN Di Di Di WN UN VN 72.1 CR C R C R RN S N T N 56 62.7 (50) (62) 54 27.4 28.4 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Oct. 2011 4 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE P1 V VGE = 15V P1 U B G-E short IC GuP P1 GuP EuP EuP U G-E short VGE = 15V GuN IC GuN Es VGE = 15V V N1 Es V IC GB N1 Es N1 P side Inverter part Tr N side Inverter part Tr (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) B r Tr G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) VCE(sat) test circuit P1 V P1 G-E short G-E short IE GuP P1 V GuP EuP IF EuP B U U G-E short G-E short GuN GuN Es Es IE G-E short V GB Es N1 N1 N1 N side Inverter part Di P side Inverter part Di (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) B r Di G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) VEC/VF test circuit Arm VGE IE IE 90% 0V 0% trr Load –VGE + VCC IC 0A 90% +VGE 0V RG VGE –VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr tf trr, Qrr test waveform Oct. 2011 5 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part VGE = 90 20V 13 80 70 12 60 50 40 11 30 20 10 10 9 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25°C 15 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3.5 3 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 0 20 40 60 80 100 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 103 Tj = 25°C 7 5 8 6 4 IC = 100A IC = 50A 2 IC = 20A 0 6 8 10 12 14 16 18 3 2 102 7 5 3 2 101 7 5 3 2 100 20 101 SWITCHING TIME (ns) Cies Coes 7 5 3 2 7 5 3 2 1 1.5 2 2.5 3 3.5 4 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 7 5 3 2 10–1 0.5 CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 103 100 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 CAPACITANCE (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part Cres G-E short 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 tf td(off) 102 7 5 3 2 td(on) tr Conditions: 101 VCC = 600V 7 5 VGE = ±15V 3 RG = 6.2Ω 2 Tj = 125°C Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Oct. 2011 6 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 5 3 2 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 103 tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive load 101 7 5 3 2 100 0 10 2 3 5 7 101 2 3 3 2 7 5 3 2 2 3 5 7 101 5 7 102 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 lrr (A), trr (ns) Eon 7 Eoff 5 trr 102 7 5 3 2 Irr Conditions: VCC = 600V VGE = ±15V RG = 6.2Ω Tj = 25°C Inductive load 101 7 5 3 2 3 2 Err 2 3 5 7 101 2 3 100 0 10 5 7 102 GATE RESISTANCE RG (Ω) 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) IC = 50A VCC = 400V 15 VCC = 600V 10 5 50 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 0 3 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 20 2 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Conditions: VCC = 600V 5 VGE = ±15V 3 IC, IE = 50A Tj = 125°C 2 Inductive load 100 0 10 GATE-EMITTER VOLTAGE VGE (V) Conditions: VCC = 600V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load GATE RESISTANCE RG (Ω) 7 0 Eoff Err Eon 100 10–1 0 10 5 7 102 102 SWITCHING LOSS (mJ/pulse) 5 100 150 200 250 300 350 GATE CHARGE QG (nC) 7 Single pulse, 5 TC = 25°C 3 2 10–1 7 5 3 2 10–2 Inverter IGBT part : Per unit base = Rth(j–c) = 0.35K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.63K/W Converter-Di part : Per unit base = Rth(j–c) = 0.33K/W Brake IGBT part : Per unit base = Rth(j–c) = 0.48K/W Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.79K/W –3 10 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 7 5 3 2 TIME (s) Oct. 2011 7 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) FORWARD CURRENT lF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1.0 1.5 4 VGE = 15V 3.5 3 2.5 2 1.5 1 0 2.0 Tj = 25°C Tj = 125°C 0.5 0 10 20 30 40 50 60 COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part FORWARD CURRENT IF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FORWARD VOLTAGE VF (V) Oct. 2011 8