MUN5131DW1, NSBA123EDXV6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. (3) (2) R1 Q2 R2 • • • • Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant R2 Q1 Features • S and NSV Prefix for Automotive and Other Applications (1) R1 (4) (5) (6) MARKING DIAGRAMS 6 0H M G G SOT−363 CASE 419B 1 MAXIMUM RATINGS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Rating Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 12 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 0H M G 0H M G G SOT−563 CASE 463A = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MUN5131DW1T1G, SMUN5131DW1T1G SOT−363 3,000 / Tape & Reel NSBA123EDXV6T1G SOT−563 4,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Publication Order Number: DTA123ED/D MUN5131DW1, NSBA123EDXV6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 187 256 1.5 2.0 mW MUN5131DW1 (SOT−363) One Junction Heated Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) PD RqJA mW/°C 670 490 °C/W 250 385 2.0 3.0 mW MUN5131DW1 (SOT−363) Both Junction Heated (Note 3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 493 325 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 188 208 °C/W TJ, Tstg −55 to +150 °C 357 2.9 mW mW/°C Junction and Storage Temperature Range NSBA123EDXV6 (SOT−563) One Junction Heated Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) PD RqJA 350 °C/W NSBA123EDXV6 (SOT−563) Both Junction Heated (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Junction and Storage Temperature Range PD RqJA TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. http://onsemi.com 2 500 4.0 250 −55 to +150 mW mW/°C °C/W °C MUN5131DW1, NSBA123EDXV6 ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted) Symbol Characteristic Min Typ Max − − 100 − − 500 − − 2.3 50 − − 50 − − 8.0 15 − − − 0.25 − 1.2 − − 1.9 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 5.0 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 1.0 mA) Vi(off) Input Voltage (on) (VCE = 0.2 V, IC = 20 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH Input Resistor R1 1.5 2.2 2.9 Resistor Ratio R1/R2 0.8 1.0 1.2 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (mW) 400 350 300 (1) SOT−363; 1.0 x 1.0 inch Pad (2) SOT−563; Minimum Pad 250 200 (1) (2) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 3 Vdc Vdc Vdc Vdc Vdc kW MUN5131DW1, NSBA123EDXV6 TYPICAL CHARACTERISTICS MUN5131DW1, NSBA123EDXV6 1000 IC/IB = 10 25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 150°C 0.1 25°C −55°C 100 −55°C 10 1 VCE = 10 V 0.01 0 10 20 30 40 0.1 50 10 1 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 100 9 7 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 8 6 5 4 3 2 0 10 20 30 40 150°C −55°C 10 1 VO = 5 V 0.1 50 25°C 0 1 2 3 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) 1 0 0.1 IC, COLLECTOR CURRENT (mA) 10 Cob, OUTPUT CAPACITANCE (pF) 150°C 25°C 10 −55°C 1 150°C 0.1 VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 4 MUN5131DW1, NSBA123EDXV6 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 M A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 MUN5131DW1, NSBA123EDXV6 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE F D −X− 5 6 1 e 2 A 4 E −Y− 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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