CYSTEKEC MTN6T62KI3S N-channel enhancement mode power mosfet Datasheet

Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 1/10
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN6T62KI3S
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=2.8A
620V
5.5A
1Ω(typ)
Features
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD Protected Gate
• RoHS compliant package
Symbol
Outline
MTN6T62KI3S
TO-251S
G
D
S
G:Gate D:Drain S:Source
Ordering Information
Device
MTN6T62KI3S-0-UA-G
Package
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN6T62KI3S
CYStek Product Specification
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Gate Source ESD susceptibility (R=1.5kΩ, C=100pF)
Operating Junction and Storage Temperature
VDS
VGS
IDM
EAS
IAS
EAR
620
±25
5.5
3.5
22
151
5.5
9
mJ
A
mJ
TL
300
°C
1.25
90
0.72
2000
-55~+150
W
W
W/°C
V
°C
ID
PD
VESD(G-S)
Tj, Tstg
Unit
V
A
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=5.5A, VDD=50V, L=10mH, VGS=10V, starting TJ=+25℃. 100% tested by conditions of L=10mH, IAS=2A,
VGS=10V, VDD=50V.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
100
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTN6T62KI3S
Min.
Typ.
Max.
Unit
Test Conditions
620
3.0
-
0.6
7.2
1.0
4.5
±9
1
50
1.2
V
V/°C
V
S
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=3A
VGS=±20V
VDS =620V, VGS =0V
VDS =620V, VGS =0V, TC=125°C
VGS =10V, ID=2.8A
-
32.4
7.6
14.4
18.4
14.6
45.2
25.8
-
nC
ID=5.5A, VDD=496V, VGS=10V
ns
VDS=310V, ID=2.75A, VGS=10V,
RG=4.7Ω
μA
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
Gate-Source Zener Diode
25
BVGSO
1214
73
31
5.1
-
0.82
320
1.6
5.5
22
1.5
-
V
ns
μC
-
-
V
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 3/10
pF
VGS=0V, VDS=30V, f=1MHz
Ω
f=1MHz
A
IS=5.5A, VGS=0V
VGS=0V, IF=5.5A, dIF/dt=100A/μs
IGS=±1mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN6T62KI3S
CYStek Product Specification
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 4/10
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
12
11
10
9
8
7
6
5
4
3
2
1
0
3.0
10V
9V
8V
7V
RDS(ON), Normalized Static Drain-Source
On-state Resistance
ID, Drain Current(A)
Typical Output Characteristics
6.5 V
6V
5.5V
VGS=5V
2.5
2.0
1.5
1.0
ID=2.8A,
VGS=10V
0.5
0.0
0
10
20
30
VDS, Drain-Source Voltage(V)
40
-75
50
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
16
2.0
Ta=25°C
14
VGS=10V
1.6
ID, Drain Current(A)
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
-25
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
0.8
0.4
VDS=30V
12
10
8
VDS=10V
6
4
2
0
0.0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
100
8
10
IF, Forward Current(A)
10
6
4
10
VGS=0V
1
Ta=150°C
Ta=25°C
0.1
0.01
ID=2.8A
2
4
6
8
VGS, Gate-Source Voltage(V)
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
RDS(ON), Static Drain-Source On-State
Resistance(Ω)
-50
Ta=25°C
0.001
0
0
2
4
6
VGS, Gate-Source Voltage(V)
MTN6T62KI3S
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Source Drain Voltage(V)
CYStek Product Specification
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 5/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Brekdown Voltage vs Ambient Temperature
10000
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
Capacitance(pF)
Ciss
1000
Coss
100
f=1MHz
1.2
1.0
0.8
ID=250μA,
VGS=0V
Crss
10
0.6
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
30
-75
-50
-25
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
100μs
10 μs
VDS=124V
RDS(ON)
Limited
10
VGS, Gate-Source Voltage(V)
ID, Drain Current(A)
1ms
10ms
1
100ms
DC
TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=1.4°C/W
Single pulse
0.1
VDS=310V
8
6
VDS=496V
4
2
ID=5.5A
0
0.01
1
10
100
0
1000
12
18
24
30
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
VGS(th), Normalized Threshold Voltage
6
5
4
3
2
1
6
VDS, Drain-Source Voltage(V)
7
ID, Maximum Drain Current(A)
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
VGS=10V, RθJC=1.4°C/W
36
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
0
25
50
75
100
125
TC, Case Temperature(°C)
MTN6T62KI3S
150
175
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
10
GFS , Forward Transfer Admittance(S)
2000
1800
TJ(MAX) =150°C
TC=25°C
RθJC=1.4°C/W
1600
Power (W)
1400
1200
1000
800
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
1
0.1
VDS=10V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.4 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
MTN6T62KI3S
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 7/10
Test Circuit and Waveforms
MTN6T62KI3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 8/10
Test Circuit and Waveforms(Cont.)
MTN6T62KI3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN6T62KI3S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C086I3
Issued Date : 2015.10.05
Revised Date :
Page No. : 10/10
TO-251S Dimension
Marking :
Device Name
Date Code
3-Lead TO-251S Plastic Package
CYStek Package Code: I3
Style : Pin 1. Gate 2. Drain
Inches
Min.
Max.
0.2559
0.2638
0.2020
0.2126
0.4094
0.4331
0.0280
0.0319
0.0858
0.0941
0.0858
0.0941
0.0181
0.0220
0.0902
0.0937
DIM
A
B
C
E
F
G
H
I
Millimeters
Min.
Max.
6.50
6.70
5.13
5.46
10.40
11.00
0.71
0.81
2.18
2.39
2.18
2.39
0.46
0.56
2.29
2.38
DIM
J
K
L
M
S
T
U
V
Inches
Min.
Max.
0.2362
0.2441
0.1299
0.1457
0.0358
0.0437
0.0181
0.0220
0.1902 REF
0.2106 REF
0.0701 REF
0.0299 REF
3. Source
Millimeters
Min.
Max.
6.00
6.20
3.30
3.70
0.91
1.11
0.46
0.56
4.83 REF
5.35 REF
1.78 REF
0.76 REF
Notes: 1.Controlling dimension: inch.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6T62KI3S
CYStek Product Specification
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