Freescale MRF6S9160HR3 Rf power field effect transistors (n-channel enhancement-mode lateral mosfets) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S9160H
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S9160HR3
MRF6S9160HSR3
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.9 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz)
Power Gain — 20 dB
Drain Efficiency — 45%
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 2% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout =
160 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 58%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9160HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
565
3.2
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
Value (1,2)
RθJC
Unit
°C/W
0.31
0.33
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 525 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
gfs
—
9.7
—
S
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
80.2
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 8 Adc)
Dynamic Characteristics(3)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Gps
20
20.9
23
dB
ηD
29
30.5
—
%
ACPR
—
- 46.8
- 45
dBc
IRL
—
- 17
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally matched on input.
(continued)
MRF6S9160HR3 MRF6S9160HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1200 mA,
Pout = 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
45
—
%
Error Vector Magnitude
EVM
—
2
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 75
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 160 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
58
—
%
IRL
—
- 12
—
dB
P1dB
—
160
—
W
Input Return Loss
Pout @ 1 dB Compression Point, CW
(f = 940 MHz)
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
3
B2
VBIAS
B1
VSUPPLY
R2
+
+
C20 C21
R1
C16 C17
C18
C7
L1
RF
INPUT Z1
C22 C23 C24
L2
C19
Z9
C9
Z10
Z11 Z12
Z13
Z14
Z15
Z16 Z17
Z18
C5
Z2
Z3
Z4
Z5
Z6
Z7
C2
Z8
C8
C1
C3
C6
C4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z19
RF
OUTPUT
C10
C11
C12
C13
C15
C14
DUT
0.426″ x 0.080″ Microstrip
0.813″ x 0.080″ Microstrip
0.471″ x 0.080″ Microstrip
0.319″ x 0.220″ Microstrip
0.171″ x 0.220″ Microstrip
0.200″ x 0.425″ x 0.630″ Taper
0.742″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.128″ x 0.630″ Microstrip
0.134″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 1. MRF6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Small
2743019447
Fair Rite
C1, C2, C19
47 pF Chip Capacitors
100B470JP500X
ATC
C3, C11
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4
2.7 pF Chip Capacitor
100B2R7JP500X
ATC
C5, C6
15 pF Chip Capacitors
100B150JP500X
ATC
C7, C8
12 pF Chip Capacitors
100B120JP500X
ATC
C9, C10
4.3 pF Chip Capacitors
100B4R3JP500X
ATC
C12
8.2 pF Chip Capacitor
100B8R2JP500X
ATC
C13, C14
3.9 pF Chip Capacitors
100B3R9JP500X
ATC
C15
0.6- 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C16
22 pF Chip Capacitor
100B220JP500X
ATC
C17
1 μF, 50 V Tantalum Capacitor
T491C105K0J0AS
Kemit
C18
20K pF Chip Capacitor
CDR353P203AK0S
Kemit
C20
180 pF Chip Capacitor
100B181JP500X
ATC
C21, C22, C23
10 μF, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C24
470 μF, 63 V Electrolytic Capacitor
KME63VB471M12x25LL
United Chemi - Con
L1, L2
10 nH Inductors
0603HC
Coilcraft
R1
180 Ω Chip Resistor
R2
10 Ω Chip Resistor
MRF6S9160HR3 MRF6S9160HSR3
4
RF Device Data
Freescale Semiconductor
C24
C16
B1
C18
C17
B2
900 MHz
Rev. 2
C21
R2
C22 C23
R1
C19
C20
L1
C7 C9
C5
L2
C1
C3
C4
C6
CUT OUT AREA
C14
C15
C12 C13
C2
C8 C10 C11
Figure 2. MRF6S9160HR3(SR3) Test Circuit Component Layout
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20.3
28
26
20
19.7
24
VDD = 28 Vdc, Pout = 35 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
19.4
−40
−45
19.1
18.8
−50
ACPR
18.5
−55
IRL
ALT1
18.2
−60
17.9
840
850
860
870
880
890
900
910
−65
920
−5
−8
−11
−14
−17
−20
IRL, INPUT RETURN LOSS (dB)
30
Gps
ACPR (dBc), ALT1 (dBc)
ηD
20.6
ηD, DRAIN
EFFICIENCY (%)
32
20.9
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 35 Watts Avg.
Gps, POWER GAIN (dB)
19.7
40
Gps
38
19.4
36
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
19.1
18.8
−30
−36
18.5
ACPR
18.2
−42
IRL
17.9
−48
ALT1
17.6
−54
17.3
840
850
860
870
880
890
900
910
−60
920
−3
−6
−9
−12
−15
−18
IRL, INPUT RETURN LOSS (dB)
42
ACPR (dBc), ALT1 (dBc)
ηD
20
ηD, DRAIN
EFFICIENCY (%)
44
20.3
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 70 Watts Avg.
23
Gps, POWER GAIN (dB)
22
IDQ = 1800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
1500 mA
21
20
1200 mA
19
900 mA
18
600 mA
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
16
−20
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−30
IDQ = 600 mA
−40
900 mA
−50
1500 mA
1800 mA
1200 mA
−60
−70
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9160HR3 MRF6S9160HSR3
6
RF Device Data
Freescale Semiconductor
−10
−20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
−40
−50
3rd Order
−60
5th Order
−70
7th Order
−80
1
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
400
100
10
0
1
0.1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Pout, OUTPUT POWER (dBm)
61
100
Ideal
P6dB = 54.7 dBm (294.78 W)
59
P3dB = 53.98 dBm (249.98 W)
57
P1dB = 53.02 dBm (200.36 W)
55
Actual
53
51
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
49
47
26
28
30
32
34
38
36
40
Pin, INPUT POWER (dBm)
60
VDD = 28 Vdc, IDQ = 1200 mA
f = 880 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
50
−20
TC = −30_C
25_C
−30
−30_C
40
85_C
−40
25_C
85_C
30
ACPR
20
Gps
−50
−30_C
−60
ηD
85_C
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
25_C −70
10
ALT1
0
1
10
100
−80
300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
23
70
−30_C
85_C
Gps
TC = −30_C
60
50
Gps, POWER GAIN (dB)
21
25_C
20
19
40
30
85_C
ηD
18
20
VDD = 28 Vdc
IDQ = 1200 mA
f = 880 MHz
17
10
0
300
16
1
10
ηD, DRAIN EFFICIENCY (%)
22
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21
Gps, POWER GAIN (dB)
20
19
18
16 V
17
32 V
28 V
20 V
24 V
IDQ = 1200 mA
f = 880 MHz
VDD = 12 V
16
0
50
100
150
200
250
300
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90
100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9160HR3 MRF6S9160HSR3
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
..........................................
..................
. . . .
...
..
..
..
..
..
.
.
..
..
..
...
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
..
Integrated BW
Integrated BW
.
.
.
.
.
.
..
...
.
.
.
.
.
...
.
.
.
.
.
...........
.
.
.........
...................
....
.
.
.
.
.
.
.
.
.
.
.
.
.
.
....
.....
............
..................
........
..........
...
.......
...........
........
.
.
...........
.......
.
.
.
..
.
.
.
...............
.
..
.
....
.
..
.
.
.
.
.
.
.
..
....
. ............
.
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
.
.
...
..
.
........
.
.............
.
.
.
.
.
...............
...
Integrated BW
Integrated BW
..
......
.....
.................
...........
........
.......
...
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
9
f = 910 MHz
Zload
f = 850 MHz
Zo = 2 Ω
f = 910 MHz
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.61 - j1.27
1.20 + j0.03
865
0.66 - j1.15
1.26 + j0.15
880
0.64 - j1.05
1.31 + j0.22
895
0.55 - j0.90
1.32 + j0.28
910
0.48 - j0.74
1.26 + j0.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9160HR3 MRF6S9160HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF6S9160HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S9160HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S9160HR3 MRF6S9160HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S9160HR3 MRF6S9160HSR3
Document Number: MRF6S9160H
Rev. 1, 5/2006
12
RF Device Data
Freescale Semiconductor