Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description Main Product Characteristics High voltage schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR5H150 is available in standard DO-27 and DO-27(A) packages. • IF(AV) 5A VRRM 150V TJ 175°C VF(max) 0.92V Mechanical Characteristics Features • • • • • MBR5H150 • • • • High Surge Capacity Low Forward Voltage Drop 175°C Operating Junction Temperature Guard-Ring for Stress Protection Pb-Free and Halogen-Free Packages are available The Plastic Material Carries UL Recongnition 94V-0 Case: JEDEC DO-201AD Molded Plastic Epoxy Meets UL 94 V-0@ 0.125 in Weight (Approximately): 1.2 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Applications • • • Power Supply − Output Rectification Power Management Instrumentation DO-27 DO-27(A) Figure 1. Package Type of MBR5H150 Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150 Pin Configuration VP Pacakge (DO-27) VPA Package (DO-27(A)) Figure 2. Pin Configuration of MBR5H150 (Top View) Ordering Information MBR5H150 - Circuit Type E1: Lead Free G1: Green Package VP: DO-27 VPA: DO-27(A) Part Number Package DO-27 DO-27(A) Blank: Tube TR: Ammo Lead Free Marking ID Green Lead Free Green Packing Type MBR5H150VP-E1 MBR5H150VP-G1 515VP 515VPG Bulk MBR5H150VPTR-E1 MBR5H150VPTR-G1 515VP 515VPG Ammo MBR5H150VPA-E1 MBR5H150VPA-G1 515VP 515VPG Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150 Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 150°C Non repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60Hz) Operating Junction Temperature Range（Note 2） VRRM VRWM VR 150 V IF(AV) 5 A IFSM 125 A TJ 175 °C Storage Temperature Range TSTG -55 to 175 °C Voltage Rate of Change (Rated VR) dv/dt 10000 > 400 > 8000 V/µs ESD Ratings: Machine Model = C Human Body Model =3B V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Recommended Operating Conditions Parameter Symbol Condition Value θJC Junction to Case TBD θJA Junction to Ambient TBD Maximum Thermal Resistance Unit °C/W Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Maximum Instantaneous Reverse Current (Note 3) Symbol VF IR Conditions IF=5A, TC=25°C Rated DC TC=25°C Voltage, Rated DC TC=150°C Voltage, Value Units 0.92 V 8.0 µA 50.0 mA Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150 Typical Performance Characteristics IF,Instantaneous Forward Current(A) 100 10 1 0 25 C 0 125 C 0 150 C 0 175 C 0.1 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF,Instantaneous Forward Voltage(V) Figure 3. Typical Forward Characteristics 10000 IR,Reverse Current(µA) 1000 100 10 0 25 C 0 125 C 0 150 C 0 175 C 1 0.1 0.01 0.001 0 20 40 60 80 100 120 140 160 VR,Reverse Voltage(V) Figure 4. Typical Reverse Characteristics Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150 Mechanical Dimensions DO-27 Unit: mm(inch) 1.200(0.047) 1.300(0.051) 25.400(1.000) MIN DIA. 8.500(0.375) 9.500(0.335) 5.000(0.197) 5.600(0.220) DIA. 25.400(1.000) MIN Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR5H150 Mechanical Dimensions (Continued) DO-27(A) 8.500(0.375) 9.500(0.335) Unit: mm(inch) 5.000(0.197) 5.600(0.220) DIA. 15.100(0.594) 16.100(0.634) 1.800(0.074) MIN. 3.500(0.138) 4.500(0.0.177) 19.500(0.768 20.500(0.807) 1.200(0.047) 1.300(0.051) 1.500(0.059) MAX. DIA. Aug. 2009 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 6 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. 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