Preliminary Datasheet CR03AM-16A R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 800V-0.3A-Thyristor Low Power Use Features • • • • IT (AV) : 0.3 A VDRM : 800 V IGT: 100 μA Planar Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 2 1. Cathode 2. Anode 3. Gate 3 3 1 2 1 Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Non-repetitive peak reverse voltage VRSM DC reverse voltage VR(DC) Repetitive peak off-state voltage Note1 VDRM Non-repetitive peak off-state voltage Note1 VDSM Note1 DC off-state voltage VD(DC) Notes: 1. With gate to cathode resistance RGK = 1 kΩ R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 Voltage class 16 Unit 800 960 640 800 960 640 V V V V V V Page 1 of 6 CR03AM-16A Preliminary Parameter RMS on-state current Average on-state current Surge on-state current Symbol Ratings Unit IT(RMS) IT(AV) 0.47 0.3 A A ITSM 20 A I2t 1.6 A2 s PGM PG(AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.23 W W V V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180° conduction, Ta=62°C 60Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Symbol Min. Typ. Max. Unit Repetitive peak reverse current Repetitive peak off-state current Parameter IRRM IDRM — — — — 0.1 0.1 mA mA On-state voltage VTM — — 1.8 V Gate trigger voltage VGT — — 0.8 V Gate non-trigger voltage VGD 0.2 — — V Gate trigger current IGT 1 Note2 — 100 Note2 μA Holding current Thermal resistance IH Rth(j-a) — — — — 3 180 mA °C/W Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied RGK = 1 kΩ Tj = 25°C, ITM = 4 A instantaneous value Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM RGK = 1 KΩ Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient Notes: 2. If special values of IGT are required, choose item A, B, D or E from those listed in the table below if possible. Item A B D E IGT (μA) 1 to 30 20 to 50 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 Page 2 of 6 CR03AM-16A Preliminary Performance Curves Maximum On-State Characteristics 20 Surge On-State Current (A) Ta = 25°C 100 10−1 10−2 0 1 2 3 × 100 (%) VGT = 0.8V (Tj = 25°C) VGD = 0.2V 10−1 100 IFGM = 0.3A 101 102 Gate Trigger Voltage (V) 103 Typical Example 102 101 100 –40 0 40 80 120 160 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 0.8 Typical Distribution 0.6 Typical Example 0.2 0 –40 102 Gate Current (mA) Transient Thermal Impedance (°C/W) Gate Voltage (V) VFGM = 6V 0.4 101 Gate Trigger Current vs. Junction Temperature IGT = 100μA (Tj = 25°C) 10−1 4 Gate Characteristics PG(AV) = 0.1W 100 8 Conduction Time (Cycles at 60Hz) PGM = 0.5W 10 12 On-State Voltage (V) 102 1 16 0 100 4 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) On-State Current (A) 101 Rated Surge On-State Current 0 40 80 120 Junction Temperature (°C) R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 160 100 200 101 102 103 10−2 10−1 100 160 120 80 40 0 10−3 Time (s) Page 3 of 6 CR03AM-16A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 0.3 0.2 θ 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.4 0.3 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 40 θ = 30° 90° 180° 60° 120° 20 0 0.5 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 60° θ = 30° 0.4 120° 90° 160 180° 0.3 0.2 θ 0.1 θ 360° 0 Ambient Temperature (°C) Average Power Dissipation (W) 140 Average On-State Current (A) 0.5 Resistive loads 0 0.1 0.2 0.4 0.3 140 θ 120 360° Resistive loads Natural convection 100 80 60 40 20 0 0.5 θ θ = 30° 60° 90° 120° 180° 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.5 Average Power Dissipation (W) Ambient Temperature (°C) 0.4 180° 120° 90° 60° 0.4 θ = 30° 270° 180° 120° 90° DC 60° 0.3 0.2 θ 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 Average On-State Current (A) R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 0.5 160 Ambient Temperature (°C) Average Power Dissipation (W) 0.5 Resistive, inductive loads θ Natural convection ° 360° θ = 30 60° 90° 120° 180° 270° DC 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Page 4 of 6 Preliminary 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 160 Typical Example Tj = 125°C RGK=1kΩ 140 120 100 80 60 40 20 0 0 10 101 102 103 Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Repetitive Peak Reverse Voltage vs. Junction Temperature VD=12V RGK=1kΩ Holding Current (mA) Breakover Voltage vs. Rate of Rise of Off-State Voltage Junction Temperature (°C) 102 101 Typical Distribution 100 Typical Example 10−1 –40 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) RGK = 1kΩ Typical Example 0 40 80 120 160 Junction Temperature (°C) × 100 (%) 160 Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR03AM-16A 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Gate Trigger Current vs. Gate Current Pulse Width 104 Gate Trigger Current (μA) Typical Example Ta = 25°C 103 102 101 1 10 102 103 Gate Current Pulse Width (μs) R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 Page 5 of 6 CR03AM-16A Preliminary Package dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Ordering Information Orderable Part Number CR03AM-16A#B00 CR03AM-16A-B#B00 CR03AM-16A-A6#B00 CR03AM-16A-TB#B00 CR03AM-16A-BTB#B00 Packing Bag Bag Bag Adhesive Tape Adhesive Tape Quantity 500 pcs. 500 pcs. 500 pcs. 2000 pcs. 2000 pcs. Remark Straight type Straight type, IGT item : B A6 Lead form A8 Lead form A8 Lead form, IGT item : B Note : Please confirm the specification about the shipping in detail. R07DS0987EJ0200 Rev.2.00 Jun 14, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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